This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability
by SEMIKRON
09.08.01
B 7
-
5
SKiiP 1092 GB 170 - 474 CTV
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
V
isol
4)
AC, 1min
4000
V
T
op
,T
stg
Operating / stor. temperature
-25...+85
C
IGBT and InverseDiode
V
CES
1700
V
V
CC
5)
Operating DC link voltage
1200
V
I
C
IGBT
1000
A
T
j
3)
IGBT + Diode
-40...+150
C
I
F
Diode
1000
A
I
FM
Diode, t
p
< 1 ms
2000
A
I
FSM
Diode, T
j
= 150 C, 10ms; sin
8640
A
I
2
t (Diode) Diode, T
j
= 150 C, 10ms
373
kAs
2
Driver
V
S1
Stabilized Power Supply
18
V
V
S2
Non-stabilized Power Supply
30
V
f
smax
Switching frequency
7,0
kHz
dV/dt
Primary to secondary side
75
kV/s
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT
V
(BR)CES
Driver without supply
V
CES
-
-
V
I
CES
V
GE
= 0,
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
-
-
-
60
4
-
mA
mA
V
CE0
T
j
= 125 C
-
1,77
-
V
r
C
T
j
= 125 C
-
4,1
-
m
V
Cesat
I
C
= 800A,
T
j
= 125 C
-
5,1
-
V
V
Cesat
I
C
= 800A,
T
j
= 25 C
-
-
3,85
V
E
on
+ E
off
V
CC
=900/1200V, I
C
=1000A
T
j
= 125 C
-
845/130
1
-
mJ
C
CHC
per SkiiP, AC side
-
3,2
-
nF
L
CE
Top, Bottom
-
4
-
nH
Inverse Diode
2)
V
F
= V
EC
I
F
= 800A;
T
j
= 125 C
-
1,98
-
V
V
F
= V
EC
I
F
= 800A;
T
j
= 25 C
-
-
2,90
V
E
on
+ E
off
I
F
= 1000A;
T
j
= 125 C
-
120
-
mJ
V
TO
T
j
= 125 C
-
0,90
-
V
r
T
T
j
= 125 C
-
1,3
-
m
Thermal Characteristics
R
thjs
10)
per IGBT
-
-
0,020
C/W
R
thjs
10)
per Diode
-
-
0,067
C/W
R
thsa
6,10)
P16 heatsink; see case S4
-
-
0,033
C/W
Driver
I
S1
Supply current 15V-supply
290+490*f
s
/f
smax
+1,3*I
AC
/A
mA
I
S2
Supply current 24V-supply
220+370*f
s
/f
smax
+1,0*I
AC
/A
mA
t
interlock-driver
Interlock-time
3,0
s
SKiiPPACK protection
I
TRIPSC
Short circuit protection
1250
2%
A
I
TRIPLG
Ground fault protection
-
A
T
TRIP
Over-temp. protection
115
5%
C
U
DCTRIP
9)
U
DC
-protection
1225
2%
V
Mechanical Data
M1
DC terminals, SI Units
4
-
6
Nm
M2
AC terminals, SI Units
8
-
10
Nm
SKiiPPACK
SK integrated intelligent
Power PACK
halfbridge
SKiiP
1092 GB 170 - 474 CTV
7,9)
Preliminary Data
Case S4
Features
Short circuit protection, due to
evaluation of current sensor
signals
Isolated power supply
Low thermal impedance
Optimal thermal management
with integrated heatsink
Pressure contact technology
with increased power cycling
capability, compact design
Low stray inductance
High power, small losses
Over-temperature protection
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast)
3)
without driver
4)
Driver input to DC link /
AC output to DC link / AC
output to heatsink
5)
with Semikron-DC link (low
inductance)
6)
other heatsinks on request
7)
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
8)
AC connection busbars must be
connected by the user; copper
busbars available on request
9)
options available for driver:
U - DC link voltage sense
F Fiber optic connector
10)
"
s
" referenced to temperature
sensor
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