by SEMIKRON
0898
B 16 21
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
Inverter
V
CES
V
GES
I
C
I
CM
I
F
= I
C
I
FM
= I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
600
20
17 / 12
34 / 24
20 / 15
40 / 30
V
V
A
A
A
A
Bridge Rectifier
V
RRM
I
D
I
FSM
I
2
t
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
800
12
370
680
V
A
A
A
2
s
T
j
T
stg
V
isol
AC, 1 min.
40 . . . + 150
40 . . . + 125
2500
C
C
V
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT - Inverter & Chopper
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 10 A
T
j
= 25 (125)
C
V
CC
= 300 V; V
GE
= 15 V
I
C
= 10 A; T
j
= 125
C
R
gon
= R
goff
= 100
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,1(2,2)
40
60
250
500
1,2
0,57
2,7(2,8)
80
120
400
750
2,3
V
ns
ns
ns
ns
mJ
nF
K/W
Diode
2)
- Inverter & Chopper
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 10 A
T
j
= 25 (125)
C
T
j
= 125 C
T
j
= 125 C
I
F
= 10 A, V
R
= 300 V
di
F
/dt = 200 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode
1,45(1,4)
0,85
55
13
1,5
0,45
1,7(1,7)
0,9
80
2,7
V
V
m
A
C
mJ
K/W
Diode - Rectifier
V
F
R
thjh
I
F
= 25 A, T
j
= 25 C
per diode
1,2
2,6
V
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Mechanical Data
M
1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 6
2
M1
2,5
Nm
SKiiP 11 NAB 06
MiniSKiiP 1
SEMIKRON integrated
intelligent Power
SKiiP 11 NAB 06
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M1
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics see
page B163
Options
also available with single phase
rectifier (called 11 NEB 06)
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
B 16 22
0698
by SEMIKRON
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 10 A
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 100
I
Cpuls
= 10 A
V
GE
= 0 V
f = 1 MHz
Fig. 5
Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
by SEMIKRON
0698
B 16 3
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
T
j
=
150 C
V
GE
= 15 V
t
sc
=
10
s
L
ext
< 25 nH
T
j
=
150 C
V
GE
= 15 V
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
T
j
= 150 C
V
GE
=
15 V
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop / IC
Mini0607
Th [C]
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
MiniSKiiP 1
SKiiP 10 NAB 06
SKiiP 11 NAB 06
Circuit
Case M1
Layout and connections for the
customer's printed circuit board
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