by SEMIKRON
0898
B 16 31
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
Inverter
V
CES
V
GES
I
C
I
CM
I
F
= I
C
I
FM
= I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
600
20
50 / 35
100 / 70
57 / 38
114 / 76
V
V
A
A
A
A
Bridge Rectifier
V
RRM
I
D
I
FSM
I
2
t
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
800
25
370
680
V
A
A
A
2
s
T
j
T
stg
V
isol
AC, 1 min.
40 . . . + 150
40 . . . + 125
2500
C
C
V
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT - Inverter
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 50 A
T
j
= 25 (125)
C
V
CC
= 300 V; V
GE
= 15 V
I
C
= 50 A; T
j
= 125
C
R
gon
= R
goff
= 22
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,1(2,2)
60
80
330
550
7,3
2,8
2,7(2,8)
120
160
500
830
1,0
V
ns
ns
ns
ns
mJ
nF
K/W
IGBT - Chopper *
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 30 A
T
j
= 25 (125)
C
V
CC
= 300 V; V
GE
= 15 V
I
C
= 30 A; T
j
= 125
C
R
gon
= R
goff
= 33
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,1(2,2)
50
80
250
500
4,0
1,6
2,7(2,8)
100
160
370
750
1,4
V
ns
ns
ns
ns
mJ
nF
K/W
Diode
2)
- Inverter & Chopper
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 50 A
T
j
= 25 (125)
C
T
j
= 125 C
T
j
= 125 C
I
F
= 50 A, V
R
= 300 V
di
F
/dt = 800 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode
1,45(1,4)
0,85
11
50
5,0
1,5
1,7(1,7)
0,9
16
1,2
V
V
m
A
C
mJ
K/W
Diode - Rectifier
V
F
R
thjh
I
F
= 25 A, T
j
= 25 C
per diode
1,2
2,6
V
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Mechanical Data
M
1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 9
2
M3
2,5
Nm
SKiiP 31 NAB 06
MiniSKiiP 3
SEMIKRON integrated
intelligent Power
SKiiP 31 NAB 06
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics see
page B163
Options
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 06
B 16 32
0698
by SEMIKRON
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 50 A
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 22
I
Cpuls
= 50 A
V
GE
= 0 V
f = 1 MHz
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 5 Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
by SEMIKRON
0698
B 16 3
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
T
j
=
150 C
V
GE
= 15 V
t
sc
=
10
s
L
ext
< 25 nH
T
j
=
150 C
V
GE
= 15 V
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
T
j
= 150 C
V
GE
=
15 V
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop / IC
Mini0607
Th [C]
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
MiniSKiiP 3
SKiiP 30 NAB 06
SKiiP 31 NAB 06
SKiiP 32 NAB 06
SKiiP 30 NAB 12
SKiiP 31 NAB 12
SKiiP 32 NAB 12
Circuit
Case M3
Layout and connections for the
customer's printed circuit board
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