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Электронный компонент: SKIIP342GDL

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28.01.99
by SEMIKRON
SKiiP 3-phase bridge
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
V
isol
4)
AC, 1min
3000
V
T
op
,T
stg
Operating / stor. temperature
-25...+85
C
IGBT and Inverse Diode
V
CES
1200
V
V
CC
5)
Operating DC link voltage
900
V
I
C
IGBT
300
A
T
j
3)
IGBT + Diode
-40...+150
C
I
F
Diode
300
A
I
FM
Diode, t
p
< 1 ms
600
A
I
FSM
Diode, T
j
= 150 C, 10ms; sin
2160
A
I
2
t (Diode) Diode, T
j
= 150 C, 10ms
23
kAs
2
Driver
V
S1
Stabilized Power Supply
18
V
V
S2
Non-stabilized Power Supply
30
V
f
smax
Switching frequency
20
kHz
dV/dt
Primary to secondary side
75
kV/s
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT
11)
V
(BR)CES
Driver without supply
V
CES
-
-
V
I
CES
V
GE
= 0,
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
-
-
-
15
0,4
-
mA
mA
V
TO
T
j
= 125 C
-
-
1,38
V
r
T
T
j
= 125 C
-
-
7,4
m
V
Cesat
I
C
= 250A,
T
j
= 125 C
-
-
3,2
V
V
Cesat
I
C
= 250A,
T
j
= 25 C
-
-
3,05
V
E
on
+ E
off
V
CC
=600/900V,I
C
=300A
T
j
= 125 C
-
-
90/146
mJ
C
CHC
per SkiiP, AC side
-
1,4
-
nF
L
CE
Top, Bottom
-
15
-
nH
Inverse Diode
2)
V
F
= V
EC
I
F
= 250A;
T
j
= 125 C
-
-
2,43
V
V
F
= V
EC
I
F
= 250A;
T
j
= 25 C
-
-
2,55
V
E
on
+ E
off
I
F
= 300A;
T
j
= 125 C
-
-
12
mJ
V
TO
T
j
= 125 C
-
0,91
-
V
r
T
T
j
= 125 C
-
3,8
-
m
Thermal Characteristics
R
thjs
10)
per IGBT
-
-
0,090
C/W
R
thjs
10)
per Diode
-
-
0,250
C/W
R
thsa
6,10)
P16 heatsink; see case
-
-
0,033
C/W
Driver
I
S1
Supply current 15V-supply
340+490*f
s
/f
smax
+3,5*I
AC
/A
mA
I
S2
Supply current 24V-supply
250+360*f
s
/f
smax
+2,6*I
AC
/A
mA
t
interlock-driver
Interlock-time
2,3
s
SKiiPPACK protection
I
TRIPSC
Short circuit protection
375
2%
A
I
TRIPLG
Ground fault protection
87 +/- 2%
A
T
TRIP
Over-temp. protection
115
5%
C
U
DCTRIP
9)
U
DC
-protection
920
2%
V
Mechanical Data
M1
DC terminals, SI Units
4
-
6
Nm
M2
AC terminals, SI Units
8
-
10
Nm
SKiiPPACK
SK integrated intelligent
Power PACK
3-phase bridge with
brake chopper (E/A)
SKiiP
342 GDL 120 - 411 CTV
7,9)
Preliminary Data
Case S5GDL
Features
Short circuit protection, due to
evaluation of current sensor
signals
Isolated power supply
Low thermal impedance
Optimal
thermal
management
with integrated heatsink
Pressure contact technology
with increased power cycling
capability, compact design
Low stray inductance
High power, small losses
Over-temperature protection
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast)
3)
without driver
4)
Driver input to DC link/ AC
output to heatsink
5)
with Semikron-DC link (low
inductance)
6)
other heatsinks on request
7)
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
9)
options available for driver:
U - DC link voltage sense
F Fiber optic connector
10)
"
s
" referenced to temperature
sensor
11)
NPT-technology with homo-
genous current-distribution
by SEMIKRON
28.01.99
SKiiP Brake-chopper
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
V
isol
4)
AC, 1min
3000
V
T
op
,T
stg
Operating / stor. temperature
-25...+85
C
IGBT and Inverse Diode
V
CES
1200
V
V
CC
5)
Operating DC link voltage
900
V
I
C
IGBT
300
A
T
j
3)
IGBT + Diode
-40...+150
C
I
F
Diode
300
A
I
FM
Diode, t
p
< 1 ms
600
A
I
FSM
Diode, T
j
= 150 C, 10ms; sin
2160
A
I
2
t (Diode) Diode, T
j
= 150 C, 10ms
23
kAs
2
Driver
V
S1
Stabilized Power Supply
18
V
V
S2
Non-stabilized Power Supply
30
V
f
smax
Switching frequency
5
kHz
dV/dt
Primary to secondary side
50
kV/s
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT
11)
V
(BR)CES
Driver without supply
V
CES
-
-
V
I
CES
V
GE
= 0,
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
-
-
-
15
0,4
-
mA
mA
V
TO
T
j
= 125 C
-
-
1,38
V
r
T
T
j
= 125 C
-
-
7,4
m
V
Cesat
I
C
= 250A,
T
j
= 125 C
-
-
3,2
V
V
Cesat
I
C
= 250A,
T
j
= 25 C
-
-
3,05
V
E
on
+ E
off
V
CC
=600/900V,I
C
=300A
T
j
= 125 C
-
-
90/146
mJ
C
CHC
per SkiiP, AC side
-
1,4
-
nF
L
CE
Top, Bottom
-
15
-
nH
Inverse Diode
2)
V
F
= V
EC
I
F
= 250A;
T
j
= 125 C
-
-
2,43
V
V
F
= V
EC
I
F
= 250A;
T
j
= 25 C
-
-
2,55
V
E
on
+ E
off
I
F
= 300A;
T
j
= 125 C
-
-
12
mJ
V
TO
T
j
= 125 C
-
0,91
-
V
r
T
T
j
= 125 C
-
3,8
-
m
Thermal Characteristics
R
thjs
10)
per IGBT
-
-
0,090
C/W
R
thjs
10)
per Diode
-
-
0,250
C/W
R
thsa
6,10)
P16 heatsink; see case
-
-
0,033
C/W
Driver
I
S1
Supply current 15V-supply
67+10*f
s
/f
smax
+0*I
AC
/A
mA
I
S2
Supply current 24V-supply
67+10*f
s
/f
smax
+0,0*I
AC
/A
mA
t
interlock-driver
Interlock-time
2,3
s
SKiiPPACK protection
I
TRIPSC
Short circuit protection
375
2%
A
I
TRIPLG
Ground fault protection
-
A
T
TRIP
Over-temp. protection
115
5%
C
U
DCTRIP
9)
U
DC
-protection
920
2%
V
Mechanical Data
M1
DC terminals, SI Units
4
-
6
Nm
M2
AC terminals, SI Units
8
-
10
Nm
SKiiPPACK
SK integrated intelligent
Power PACK
3-phase bridge with
brake chopper (E/A)
SKiiP
342 GDL 120 - 411 CTV
7,9)
Preliminary Data
Case S5GDL
Features
Short circuit protection, due to
evaluation of current sensor
signals
Isolated power supply
Low thermal impedance
Optimal
thermal
management
with integrated heatsink
Pressure contact technology
with increased power cycling
capability, compact design
Low stray inductance
High power, small losses
Over-temperature protection
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast)
3)
without driver
4)
Driver input to DC link/ AC
output to heatsink
5)
with Semikron-DC link (low
inductance)
6)
other heatsinks on request
7)
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
8)
E - adapted to 400 Vrms; U -
adapted to 460 Vrms
9)
options available for driver:
U - DC link voltage sense
F Fiber optic connector
10)
"
s
" referenced to temperature
sensor
11)
NPT-technology with homo-
genous current-distribution