by SEMIKRON
000621
1
SKiiP 82 ANB 15 T1
Absolute Maximum Ratings
Symbol Conditions
1)
Values
Units
Bridge Rectifier
V
RRM
I
D
I
FSM
It
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
1500
100
3)
1000
5000
V
A
A
As
IGBT Chopper
V
CES
V
GES
I
C
I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
1200
20
58 / 40
116 / 80
V
V
A
A
Freewheeling Diode
2)
V
RRM
I
F
I
FM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
1200
38 / 26
76 / 52
V
A
A
T
j
T
stg
V
isol
Diode & IGBT
AC, 1 min.
40 ... + 150
40 ... + 125
2500
C
C
V
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
Diode - Rectifier
V
F
V
TO
r
T
R
thjh
I
F
= 75 A
T
j
= 125 C
T
j
= 125 C
T
j
= 125 C
per diode
1,15
0,8
4,5
1,0
V
V
m
K/W
IGBT - Chopper
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 50 A
T
j
= 25 (125) C
V
CC
= 600 V; V
GE
= 15 V
I
C
= 50 A; T
j
= 125 C
R
gon
= R
goff
= 22
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,5(3,1)
44
56
380
70
13
3,3
3,0(3,7)
0,5
V
ns
ns
ns
ns
mJ
nF
K/W
Diode
2)
- Chopper
V
F
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 25 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 25 A; V
R
= 600 V
di
F
/dt = 500 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode
2,0(1,8)
1,0
32
25
4,5
1,0
2,5(2,3)
1,2
44
1,2
V
V
m
A
C
mJ
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Mechanical Data
M
1
Case
mounting torque
mechanical outline see pages
B 16 13 and B 16 14
2,5
M8a
3,5
Nm
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 82 ANB 15 T1
3-phase bridge rectifier +
IGBT braking chopper
Case M8a
UL recognized file no. E63532
specification of temperature
sensor see part A of data book
99
common characteristics see
page B 16 4 of data book 99
1)
T
heatsink
= 25 C, unless otherwise
specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast recovery)
3)
limited by spring contact
2
000621
by SEMIKRON
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 5 Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
T
j
= 125 C
V
CC
= 600 V
V
GE
= 15 V
I
C
= 50 A
T
j
= 125 C
V
CC
= 600 V
V
GE
= 15 V
R
G
= 22
V
GE
= 0 V
f = 1 MHz
I
Cpuls
= 50 A
2
8
1
12
1
1
18
2
1
2
3
V
8 V
VGE V
32NA1205
G n C
2
8
1
1
2
3
5
17V
13V
15V
11V
9V
7V
IC A
VCE V
32NA1201.vpo
1
1
1
1
0
10
20
30
40
Ciss
Coss
Crss
C n
32NA1206
VCE V
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