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Электронный компонент: SKIIP83AHB08

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by SEMIKRON
0698
B 16 45
SKiiP 83 AHB 08
Absolute Maximum Ratings
Symbol Conditions
1)
Values
Units
Bridge Rectifier
V
RRM
I
D
I
FSM
/I
TSM
It
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 C, T
j
= 25 C
t
p
= 10 ms; sin. 180 C, T
j
= 25 C
800
75
1000
5000
V
A
A
As
IGBT Chopper
V
CES
V
GES
I
C
I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
600
20
50 / 35
100 / 70
V
V
A
A
Freewheeling Diode
2)
V
RRM
I
F
I
FM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
600
57 / 38
114 / 76
V
A
A
T
j
T
j
T
stg
V
isol
Diode & IGBT
Thyristor
AC, 1 min.
40 ... + 150
40 ... + 125
40 ... + 125
2500
C
C
C
V
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
Diode - Rectifier
V
F
V
TO
r
T
R
thjh
I
F
= 75 A
T
j
= 125 C
T
j
= 125 C
T
j
= 125 C
per diode



1,15
0,8
4,5


1,0
V
V
m
K/W
Thyristor - Rectifier
V
T
V
T
(TO)
r
T
R
thjh
I
GD
V
GT
I
GT
I
H
I
L
dv/dt
CR
di/dt
CR
I
F
= 120 A
T
j
= 25 C
T
j
= 125 C
T
j
= 125 C
per thyristor
T
j
= 125 C




5



500






250
600

1,8
1,1
5
0,9

3
150


125
V
V
m
K/W
mA
V
mA
mA
mA
V/
s
A/
s
IGBT - Chopper
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 50 A
T
j
= 25 (125) C
V
CC
= 300 V; V
GE
= 15 V
I
C
= 50 A; T
j
= 125 C
R
gon
= R
goff
= 22
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT







2,1(2,2)
60
80
330
550
7,3
2,8
2,7(2,8)
120
160
500
830

1,0
V
ns
ns
ns
ns
mJ
nF
K/W
T
j
= 25 C
T
j
= 25 C
T
j
= 125 C
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 83 AHB 08
half controlled
3-phase bridge rectifier +
IGBT braking chopper
Case M8a
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics see
page B 16 3
Options
also available with uncontrolled
rectifier (called 82 ANB 08)
also available with powerful
chopper, data sheet on request
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
T
heatsink
= 25 C, unless otherwise
specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast recovery)
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B 16 46
0698
by SEMIKRON
SKiiP 83 AHB 08
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
Diode
2)
- Freewheeling
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 50 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 50 A; V
R
= 300 V
di
F
/dt = 800 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode






1,45(1,4)
0,85
11
50
5,0
1,5
1,7(1,7)
0,9
16


1,2
V
V
m
A
C
mJ
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Mechanical Data
M
1
Case
case to heatsink, SI Units
mechanical outline see pages
B 16 13 and B 16 14
2,5
M8a
3,5
Nm
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 83 AHB 08
half controlled
3-phase bridge rectifier +
IGBT braking chopper
Case M8a
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by SEMIKRON
0698
B 16 47
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 5 Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 50 A
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 22
V
GE
= 0 V
f = 1 MHz
I
Cpuls
= 50 A
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B 16 48
0698
by SEMIKRON
Fig. 7 Gate trigger characteristics
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by SEMIKRON
0698
B 16 3
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
T
j
=
150 C
V
GE
= 15 V
t
sc
=
10
s
L
ext
< 25 nH
T
j
=
150 C
V
GE
= 15 V
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
T
j
= 150 C
V
GE
=
15 V
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop / IC
Mini0607
Th [C]
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
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MiniSKiiP 8
Input bridge part
SKiiP 82 ANB 08
SKiiP 83 ANB 08
SKiiP 81 ANB 15
SKiiP 82 ANB 15
SKiiP 83 ANB 15
SKiiP 83 AHB 15
SKiiP 83 ATB 15
Circuit ANB
Case M8a
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MiniSKiiP 8
Input bridge part
SKiiP 82 ANB 08
SKiiP 83 ANB 08
SKiiP 81 ANB 15
SKiiP 82 ANB 15
SKiiP 83 ANB 15
SKiiP 83 AHB 15
SKiiP 83 ATB 15
Case M8a
Layout and connections for the
customer's printed circuit board
Pin
Connection
Diode bridge ANB
Halfcontrolled AHB
Thyristor bridge ATB
1
reserved
reserved
G2 Bot
2
~ 1
~ 1
~ 1
3
~ 2
~ 2
~ 2
4
reserved
reserved
G1 Bot
5
reserved
G2 Top
G2 Top
6
~ 3
~ 3
~ 3
7
reserved
G1 Top
G1 Top
8
reserved
G3 Top
G3 Top
9
reserved
reserved
G3 Bot
10
+
+
+
11
12
+
+
+
13
14
Gate Br
Gate Br
Gate Br
15
Br
Br
Br
16
T +
T +
T +
17
T
T
T
Circuit AHB
Circuit ATB