by SEMIKRON
0698
B 16 77
SKiiP 83 AHB 15
Absolute Maximum Ratings
Symbol Conditions
1)
Values
Units
Bridge Rectifier
V
RRM
I
D
I
FSM
/I
TSM
It
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 C, T
j
= 25 C
t
p
= 10 ms; sin. 180 C, T
j
= 25 C
1500
125
1000
5000
V
A
A
As
IGBT Chopper
V
CES
V
GES
I
C
I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
1200
20
95 / 65
190 / 130
V
V
A
A
Freewheeling Diode
2)
V
RRM
I
F
I
FM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
1200
38 / 26
76 / 52
V
A
A
T
j
T
j
T
stg
V
isol
Diode & IGBT
Thyristor
AC, 1 min.
40 ... + 150
40 ... + 125
40 ... + 125
2500
C
C
C
V
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
Diode - Rectifier
V
F
V
TO
r
T
R
thjh
I
F
= 100 A
T
j
= 125 C
T
j
= 125 C
T
j
= 125 C
per diode
1,15
0,8
3,5
0,7
V
V
m
K/W
Thyristor - Rectifier
V
T
V
T
(TO)
r
T
R
thjh
I
GD
V
GT
I
GT
I
H
I
L
dv/dt
CR
di/dt
CR
I
F
= 120 A
T
j
= 25 C
T
j
= 125 C
T
j
= 125 C
per thyristor
T
j
= 125 C
5
500
250
600
1,8
1,1
5
0,9
3
150
125
V
V
m
K/W
mA
V
mA
mA
mA
V/
s
A/
s
IGBT - Chopper
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 75 A
T
j
= 25 (125) C
V
CC
= 600 V; V
GE
= 15 V
I
C
= 75 A; T
j
= 125 C
R
gon
= R
goff
= 15
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,5(3,1)
35
70
450
70
18
5,0
3,0(3,7)
70
140
600
100
0,35
V
ns
ns
ns
ns
mJ
nF
K/W
T
j
= 25 C
T
j
= 25 C
T
j
= 125 C
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 83 AHB 15
half controlled
3-phase bridge rectifier +
IGBT braking chopper
Case M8a
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics see
page B 16 4
Options
also available with uncontrolled
rectifier (called 83 ANB 15)
also available with powerful
chopper, for characteristics
please refer to SKiiP 83 AC 12
also available with full controlled
rectifier (called 83 ATB 15)
1)
T
heatsink
= 25 C, unless otherwise
specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast recovery)
B 16 78
0698
by SEMIKRON
SKiiP 83 AHB 15
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
Diode
2)
- Freewheeling
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 25 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 25 A; V
R
= 600 V
di
F
/dt = 500 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode
2,0(1,8)
1,0
32
25
4,5
1,0
2,5(2,3)
1,2
44
1,2
V
V
m
A
C
mJ
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Mechanical Data
M
1
Case
case to heatsink, SI Units
mechanical outline see pages
B 16 13 and B 16 14
2,5
M8a
3,5
Nm
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 83 AHB 15
half controlled
3-phase bridge rectifier +
IGBT braking chopper
Case M8a
by SEMIKRON
0698
B 16 79
0
15
30
45
60
75
90
105
120
135
150
0
1
2
3
4
5
17V
13V
15V
11V
9V
7V
IC [A]
82AC1201
VCE [V]
0
15
30
45
60
75
90
105
120
135
150
0
1
2
3
4
5
9V
7V
13V
17V
11V
15V
IC [A]
82AC1202
VCE [V]
0
2
4
6
8
10
12
14
16
18
20
0
120
240
360
480
600V
800V
VGE [V]
82AC1205
QG [nC]
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 5 Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
V
GE
= 0 V
f = 1 MHz
I
Cpuls
= 75 A
82AC1203.xls
0
5
10
15
20
25
30
0
30
60
90
120
150
I
C
A
E
mJ
Eon
Eoff
T
j
= 125 C
V
CE
= 600 V
V
GE
= 15 V
R
G
= 15
82AC1204.xls
0
6
12
18
24
0
10
20
30
40
R
G
E
mJ
Eon
Eoff
T
j
= 125 C
V
CE
= 600 V
V
GE
= 15 V
I
C
= 75 A
B 16 80
0698
by SEMIKRON
Fig. 7 Gate trigger characteristics
B 16 4
0698
by SEMIKRON
T
j
=
150 C
V
GE
= 15 V
t
sc
=
10
s
L
ext
< 25 nH
T
j
=
150 C
V
GE
= 15 V
T
j
= 150 C
V
GE
=
15 V
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop / IC
Mini1207
Th [C]
0
0,5
1
1,5
2
2,5
0
500
1000
1500
ICpuls/IC
Mini1209
VCE [V]
0
2
4
6
8
10
12
0
500
1000
1500
Note:
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
ICsc/ICN
Mini1210
VCE [V]
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
MiniSKiiP 1200 V
MiniSKiiP 8
Input bridge part
SKiiP 82 ANB 08
SKiiP 83 ANB 08
SKiiP 81 ANB 15
SKiiP 82 ANB 15
SKiiP 83 ANB 15
SKiiP 83 AHB 15
SKiiP 83 ATB 15
Circuit ANB
Case M8a
MiniSKiiP 8
Input bridge part
SKiiP 82 ANB 08
SKiiP 83 ANB 08
SKiiP 81 ANB 15
SKiiP 82 ANB 15
SKiiP 83 ANB 15
SKiiP 83 AHB 15
SKiiP 83 ATB 15
Case M8a
Layout and connections for the
customer's printed circuit board
Pin
Connection
Diode bridge ANB
Halfcontrolled AHB
Thyristor bridge ATB
1
reserved
reserved
G2 Bot
2
~ 1
~ 1
~ 1
3
~ 2
~ 2
~ 2
4
reserved
reserved
G1 Bot
5
reserved
G2 Top
G2 Top
6
~ 3
~ 3
~ 3
7
reserved
G1 Top
G1 Top
8
reserved
G3 Top
G3 Top
9
reserved
reserved
G3 Bot
10
+
+
+
11
12
+
+
+
13
14
Gate Br
Gate Br
Gate Br
15
Br
Br
Br
16
T +
T +
T +
17
T
T
T
Circuit AHB
Circuit ATB
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