Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temp.
SKKT 162, SKKH 162
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Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
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Fig. 9 Gate trigger characteristics
Dimensions in mm
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKKT 162, SKKH 162
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06-02-2004 NOS
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