SEMITRANS
TM
M1
Power MOSFET Modules
SKM 111AR
Features
Typical Applications
MA
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
Inverse diode
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
Inverse diode
Thermal characteristics
Mechanical data
SKM 111AR
1
20-02-2004 SCT
by SEMIKRON
Fig. 1 Rated power dissipation vs. temperature
Fig. 2 Maximum safe operating area
Fig. 3 Output characteristic
Fig. 4 Transfer characteristic
Fig. 5 On-resistance vs. temperature
Fig. 6 Rated current vs. temperature
SKM 111AR
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20-02-2004 SCT
by SEMIKRON
Fig. 7 Brakdown voltage vs. temperature
Fig. 8 Drain-source voltage derating
Fig. 9 Capacitances vs. drain-source voltage
Fig. 10 Gate charge characteristic
Fig. 11 Diode forward characteristic
Fig. 14 Gate-source threshold voltage
SKM 111AR
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20-02-2004 SCT
by SEMIKRON
UL Recognized
File no. E 63 532
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 111AR
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20-02-2004 SCT
by SEMIKRON
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