by SEMIKRON
B 5 35
0898
SEMITRANS
M
Power MOSFET Modules
120 A, 200 V, 17 m
SKM 120 B 020
Replaces discontinued SKM 224 A
Features
N Channel, enhancement mode
Short internal connections
avoid oscillations
Isolated copper baseplate using
Al
2
O
3
ceramic Direct Copper
Bonding Technology (DCB)
All electrical connections on top
for easy busbaring
Large clearances (10 mm) and
creepage distances (20 mm)
UL recognized, file E63 532
Typical Applications
Switched mode power supplies
DC servo and robot drives
DC choppers
UPS equipment
Plasma cutting
Not suitable for linear
amplification
This is an electrostatic dischar-
ge sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
V
DS
200
V
V
DGR
R
GS
= 20 k
200
V
I
D
T
case
= 25
C
120
A
T
case
= 85
C
87
A
I
DM
360
A
V
GS
20
V
P
D
500
W
T
j
, (T
stg
)
40 . . .+150 (125)
C
V
isol
AC, 1 min
2 500
V
humidity
DIN 40 040
Class F
climate
DIN IEC 68 T.1
40/125/56
Inverse Diode
I
F
= I
D
120
A
I
FM
= I
DM
360
A
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
V
(BR)DSS
V
GS
= 0, I
D
= 0,25 mA
200
V
V
GS(th)
V
GS
= V
DS
, I
D
= 1 mA
2,1
3,0
4,0
V
I
DSS
V
GS
= 0
T
j
= 25
C
50
250
A
V
GS
= 200 V
T
j
= 125
C
300
1000
A
I
GSS
V
GS
= 20 V, V
DS
= 0
10
100
nA
R
DS(on)
V
GS
= 10 V, I
D
= 120 A
15
17
m
g
fs
V
DS
= 5 V, I
D
= 75 A
60
90
S
C
CHC
per MOSFET
100
pF
C
iss
V
GS
= 0
10,4
16
nF
C
oss
V
DS
= 25 V
2
4,5
nF
C
rss
f = 1 MHz
1
1,4
nF
L
DS
30
nH
t
d(on)
V
DD
= 100 V
120
ns
t
r
I
D
= 75 A
60
ns
t
d(off)
V
GS
= 10 V
240
ns
t
f
R
GS
= 3,3
40
ns
Inverse Diode
V
SD
I
F
= 240 A, V
GS
= 0
1,2
1,5
V
t
rr
T
j
= 25
C
2)
400
ns
T
j
= 150
C
2)
700
ns
Q
rr
T
j
= 25
C
2)
5,0
C
T
j
= 150
C
2)
8
Thermal Characteristics
R
thjc
per MOSFET
0,25
C/W
R
thch
per module
0,05
C/W
Mechanical Data
M
1
to heatsink
SI Units (M6)
4
5
Nm
US Units
35
44
lb.in.
M
2
for terminals SI Units (M5)
2,5
3,5
Nm
US Units
22
24
lb.in.
a
5x9,81
m/s
2
w
160
g
Case
page B 5 38
D 70
1)
T
case
= 25
C, unless otherwise specified
.
2)
I
F
= I
D,
V
R
= 100 V, di
F
/dt = 100 A/
s
SEMITRANS 2
by SEMIKRON
B 5 38
0898
Fig. 51 Transient thermal impedance
Fig. 52 Thermal impedance under pulse conditions
Fig. 13 On-resistance vs. drain current
Fig. 14 Gate-source threshold voltage
SEMITRANS 2
Case D 70
Dimensions in mm
SKM 120 B 020
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