by SEMIKRON
000828
B 6 7
SKM 145 GB 063 DN ...
Absolute Maximum Ratings
Values
Symbol Conditions
1)
Units
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
R
GE
= 20 k
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
per IGBT, T
case
= 25 C
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
600
600
200 / 140
400 / 280
20
700
40 ... +150 (125)
2500
class 3K7/IE32
40/125/56
V
V
A
A
V
W
C
V
Inverse Diode and FWD of type ,,GAL"
6)8)
I
F
= I
C
I
FM
= I
CM
I
FSM
I
2
t
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 C
t
p
= 10 ms; T
j
= 150 C
130 / 90
400 / 280
880
3800
A
A
A
A
2
s
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
V
CEsat
g
fs
V
GE
= 0, I
C
= 4 mA
V
GE
= V
CE
, I
C
= 3mA
V
GE
= 0
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
V
GE
= 20 V, V
CE
= 0
I
C
= 100 A
V
GE
= 15 V;
I
C
= 150 A
T
j
= 25 (125) C
V
CE
= 20 V, I
C
= 150 A
V
CES
4,5
50
5,5
0,2
5
1,8(2,0)
2,1(2,4)
6,5
0,4
0,3
2,5(2,8)
V
V
mA
mA
A
V
V
S
C
CHC
C
ies
C
oes
C
res
L
CE
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
8400
1000
600
350
25
pF
pF
pF
pF
nH
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
V
CC
= 300 V
V
GE
= 15 V / +15 V
3)
I
C
= 150 A, ind. load
R
Gon
= R
Goff
= 10
T
j
= 125 C
130
65
450
40
8,5
5,5
ns
ns
ns
ns
mWs
mWs
Inverse Diode and FWD of type ,,GAL"
6)8)
V
F
= V
EC
V
TO
r
t
I
RRM
Q
rr
I
F
= 100 A
V
GE
= 0 V;
I
F
= 150 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 150 A; T
j
= 125 C
2)
I
F
= 150 A; T
j
= 125 C
2)
1,45(1,35)
1,55(1,55)
6
53
8,1
1,7
1,9
0,9
8
V
V
V
m
A
C
Thermal characteristics
R
thjc
R
thjc
R
thch
per IGBT
per diode
per module
0,18
0,5
0,05
C/W
C/W
C/W
SEMITRANS
M
Superfast NPT-IGBT
Modules
SKM 145 GB 063 DN
SKM 145 GAL 063 DN
Features
N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
Low tail current with low
temperature dependence
High short circuit capability, self
limiting if term. G is clamped to E
Pos. temp.-coeff. of V
CEsat
Very low C
ies
, C
oes
, C
res
Fast & soft inverse CAL diodes
8)
Without hard mould
Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
Switching (not for linear use)
Switched mode power supplies
UPS
AC inverter servo drives
Pulse frequencies also above
10 kHz
Welding inverters
1)
T
case
= 25 C, unless otherwise
specified
2)
I
F
= I
C
, V
R
= 300 V,
di
F
/dt = 1500 A/
s, V
GE
= 0 V
3)
Use V
GEoff
= 5... 15 V
6)
The free-wheeling diode of the GAL
type has the data of the inverse
diode
8)
CAL = Controlled Axial Lifetime
Technology
SEMITRANS 2N (low inductance)
GB
GAL
6)
B 6 8
000828
by SEMIKRON
SKM 145 GB 063 DN ...
0
2
4
6
8
10
12
0
100
200
300
400
500
600
700
V
CE
V
I
CSC
/I
C
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
di/dt= 500 A/s
1400 A/s
2500 A/s
M145GB063DN.XLS - 6
0
0,5
1
1,5
2
2,5
0
100
200
300
400
500
600
700
V
CE
V
I
Cpuls
/I
C
M145GB063DN.XLS - 5
1
10
100
1000
1
10
100
1000
10000
V
CE
V
I
C
A
t
p
=10s
100s
1ms
10ms
M145GB063DN.XLS - 4
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
R
G
E
mWs
E
on
E
off
M145GB063DN.XLS - 3
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
350
I
C
A
E
mWs
E
on
E
off
M145GB063DN.XLS - 2
0
100
200
300
400
500
600
700
800
0
20
40
60
80
100
120
140
160
T
C
C
P
tot
W
M145GB063DN.XLS - 1
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 10
1 pulse
T
C
= 25 C
T
j
150 C
T
j
150 C
V
GE
= 15 V
t
sc
10 s
L < 50 nH
I
C
= 150 A
T
j
150 C
V
GE
= 15 V
R
Goff
= 10
I
C
= 150 A
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 150 A
Not for
linear use
by SEMIKRON
000828
B 6 9
SKM 145 GB 063 DN ...
0
50
100
150
200
250
300
0
2
4
6
8
10
12
14
V
G
V
I
C
A
M145GB063DN.XLS - 12
0
50
100
150
200
250
300
0
1
2
3
4
5
V
CE
V
I
C
A
17V
15V
13V
11V
9V
7V
M145GB063DN.XLS - 10
0
50
100
150
200
250
300
0
1
2
3
4
5
V
CE
V
I
C
A
17V
15V
13V
11V
9V
7V
M145GB063DN.XLS - 9
0
40
80
120
160
200
240
0
20
40
60
80
100
120
140
160
T
C
C
I
C
A
M145GB063DN.XLS - 8
P
cond(t)
= V
CEsat(t)
I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
I
C(t)
V
CE(TO)(Tj)
1,2 0,001 (T
j
25) [V]
typ.: r
CE(Tj)
= 0,006 + 0,000027 (T
j
25) [
]
max.: r
CE(Tj)
= 0,0090 + 0,000028 (T
j
25) [
]
valid for V
GE
= + 15
[V]; I
C
0,3 I
Cn
Fig. 9 Typ. output characteristic, t
p
= 250 s; T
j
= 25 C
Fig. 10 Typ. output characteristic, t
p
= 250 s; T
j
= 125 C
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
+2
1
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, t
p
= 250 s; V
CE
= 20 V
T
j
= 150 C
V
GE
15V
B 6 10
000828
by SEMIKRON
SKM 145 GB 063 DN ...
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
0
20
40
60
80
100 120 140 160 180
I
F
A
E
offD
mJ
25
12
60
8
R
G
=
5
M145GB063DN.XLS - 18
10
100
1000
0
50
100
150
200
250
300
350
I
C
A
t
ns
t
doff
t
don
t
r
t
f
M145GB063DN.XLS - 15
0
40
80
120
160
0
0,4
0,8
1,2
1,6
2
V
F
V
I
F
A
T
j
=125C, typ.
T
j
=25C, typ.
T
j
=125C, max.
T
j
=25C, max.
M145GB063DN.XLS - 17
10
100
1000
10000
0
10
20
30
40
50
60
70
R
G
t
ns
t
doff
t
don
t
r
t
f
M145GB063DN.XLS - 16
0,1
1
10
100
0
10
20
30
V
CE
V
C
nF
C
ies
C
oes
C
res
M145GB063DN.XLS - 14
0
2
4
6
8
10
12
14
16
18
20
0
100
200
300
400
500
Q
Gate
nC
V
GE
V
100V
300V
M145GB063DN.XLS - 13
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
V
GE
= 0 V
f = 1 MHz
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 150 A
induct. load
I
Cpuls
= 150 A
T
j
= 125 C
V
CE
= 300 V
V
GE
= 15 V
R
Gon
= 10
R
Goff
= 10
induct. load
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
by SEMIKRON
000828
B 6 11
SKM 145 GB 063 DN ...
0
2
4
6
8
10
12
0
1000
2000
3000
4000
5000
di
F
/dt
A/s
Q
rr
C
I
F
=
100 A
75 A
50 A
25 A
25
12
60
8
R
G
=
5
150 A
M145GB063DN.XLS - 24
0
20
40
60
80
100
120
0
1000
2000
3000
4000
5000
di
F
/dt
A/s
I
RR
A
25
12
60
8
R
G
=
5
M145GB063DN.XLS - 23
0
20
40
60
80
100
120
0
20
40
60
80
100 120 140 160 180
I
F
A
I
RR
A
25
12
60
8
R
G
5
M145GB063DN.XLS - 22
Fig. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
f
Fig. 22 Typ. CAL diode peak reverse recovery
current I
RR
= f (I
F
; R
G
)
Fig. 23 Typ. CAL diode peak reverse recovery
current I
RR
= f (di/dt)
Fig. 24 Typ. CAL diode recovered charge
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
I
F
= 100 A
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
t
p
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
M145GB063DN.XLS - 19
0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
s
Z
thJC
K/W
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
t
p
M145GB063DN.XLS - 20
B 6 12
000828
by SEMIKRON
SKM 145 GB 063 DN ...
SEMITRANS 2N (low inductance)
Case D 93
UL Recognized
File no. E 63 532
SKM 145 GB 063 DN
Dimensions in mm
Case outline and circuit diagrams
Mechanical Data
Symbol Conditions
Values
Units
min.
typ.
max.
M
1
M
2
a
w
to heatsink, SI Units
(M6)
to heatsink, US Units
for terminals, SI Units
(M5)
for terminals, US Units
3
27
2,5
22
5
44
5
44
5x9,81
160
Nm
lb.in.
Nm
lb.in.
m/s
2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Eight devices are supplied in one
SEMIBOX A without mounting hard-
ware, which can be ordered separa-
tely under Ident No. 33321100 (for
10 SEMITRANS 2)
Larger packing units of 20 pieces
are used if suitable
SKM 145 GAL 063 DN
Case D 94 (
D 93)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or
implied is made regarding delivery, performance or suitability.
PDF 
ZIP