by SEMIKRON
000829
B 6 13
SKM 195 GB 063 DN ...
Absolute Maximum Ratings
Values
Symbol Conditions
1)
Units
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
R
GE
= 20 k
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
per IGBT, T
case
= 25 C
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
600
600
250 / 190
500 / 380
20
960
40 ... +150 (125)
2 500
class 3K7/IE32
40/125/56
V
V
A
A
V
W
C
V
Inverse Diode and FWD of type "GAL,GAR"
6) 8)
I
F
= I
C
I
FM
= I
CM
I
FSM
I
2
t
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 C
t
p
= 10 ms; T
j
= 150 C
200 / 140
500 / 380
1 400
9800
A
A
A
A
2
s
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
g
fs
V
GE
= 0, I
C
= 4 mA
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 0
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
V
GE
= 20 V, V
CE
= 0
I
C
= 200 A
V
GE
= 15 V;
T
j
= 25 (125) C
V
CE
= 20 V, I
C
= 200 A
V
CES
4,5
40
5,5
0,2
7
2,1(2,4)
6,5
0,3
2,5(2,8)
V
V
mA
mA
A
V
V
S
C
CHC
C
ies
C
oes
C
res
L
CE
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
(terminal 2 - 3)
11,2
1250
750
350
25
pF
nF
pF
pF
nH
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
V
CC
= 300 V
V
GE
= +15 V / 15 V
3)
I
C
= 200 A, ind. load
R
Gon
= R
Goff
= 8
T
j
= 125 C
120
85
460
50
11,5
7,5
ns
ns
ns
ns
mWs
mWs
Inverse Diode and FWD of type "GAL,GAR"
6) 8)
V
F
= V
EC
V
F
= V
EC
V
TO
r
t
I
RRM
Q
rr
I
F
= 150 A
V
GE
= 0 V;
I
F
= 200 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 200 A; T
j
= 125 C
2)
I
F
= 200 A; T
j
= 125 C
2)
1,45(1,35)
1,55(1,55)
4
75
13
1,7
1,9
0,9
5,5
V
V
V
m
A
C
Thermal characteristics
R
thjc
R
thjc
R
thch
per IGBT
per diode
per module
0,13
0,3
0,05
C/W
C/W
C/W
SEMITRANS
M
Superfast NPT-IGBT
Modules
SKM 195 GB 063 DN
SKM 195 GAL 063 DN
6)
SKM 195 GAR 063 DN
6)
Features
N channel, homogeneous Silicon
structure (NPT-Non-Punch-
through IGBT)
Low tail current with low
temperature dependence
High short circuit capability, self
limiting
Pos. temp. coeff. of V
CEsat
Low inductance case
Fast & soft inverse CAL diodes
8)
Without hard mould
Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
Switching (not for linear use)
Switched mode power supplies
AC inverter drives
UPS uninterruptable power
supplies
1)
T
case
= 25 C, unless otherwise
specified
2)
I
F
= I
C
, V
R
= 300 V, di
F
/dt = 1500
A/
s, V
GE
= 0 V
3)
Use V
GEoff
= 5 ... 15 V
4)
For switch-off of 2 * I
CN
= 400 A use
R
goff
12
.
For switch-off of short circuit use
R
goff
25
.
6)
The free-wheeling diodes of the GAL
type have the data of the inverse
diodes.
8)
CAL = Controlled Axial Lifetime
Technology
SEMITRANS 2N (low inductance)
GB
GAL
GAR
6)
6)
B 6 14
000829
by SEMIKRON
SKM 195 GB 063 DN ...
0
100
200
300
400
500
600
700
800
900
1000
0
20
40
60
80
100
120
140
160
T
C
C
P
tot
W
M195GB063DN.xls - 1
0
2
4
6
8
10
12
0
100
200
300
400
500
600
700
V
CE
V
I
CSC
/I
C
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
di/dt= 500 A/s
1400 A/s
2500 A/s
M195GB063DN.xls - 6
0
0,5
1
1,5
2
2,5
0
100
200
300
400
500
600
700
V
CE
V
I
Cpuls
/I
C
M195GB063DN.xls - 5
0,1
1
10
100
1000
1
10
100
1000
10000
V
CE
V
I
C
A
t
p
=22s
100s
1ms
10ms
M195GB063DN.xls - 4
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
R
G
E
mWs
E
on
E
off
M195GB063DN.xls - 3
0
10
20
30
40
50
0
50
100 150 200 250 300 350 400 450
I
C
A
E
mWs
E
on
E
off
M195GB063DN.xls - 2
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
T
j
= 125 C
V
CC
= 300 V
V
GE
= 15 V
R
G
= 8
1 pulse
T
C
= 25 C
T
j
150 C
T
j
150 C
V
GE
= 15 V
L = 50 nH
I
C
= 200 A
T
j
150 C
V
GE
= 15 V
R
Goff
= 8
I
C
= 200 A
T
j
= 125 C
V
CC
= 300 V
V
GE
= 15 V
I
C
= 200 A
Not for
linear use
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
by SEMIKRON
000829
B 6 15
SKM 195 GB 063 DN ...
0
40
80
120
160
200
240
280
0
20
40
60
80
100
120
140
160
T
C
C
I
C
A
M195GB063DN.xls - 8
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
V
CE
V
I
C
A
17V
15V
13V
11V
9V
7V
M195GB063DN.xls - 10
0
50
100
150
200
250
300
350
400
0
2
4
6
8
10
12
14
V
G
V
I
C
A
M195GB063DN.xls - 12
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
V
CE
V
I
C
A
17V
15V
13V
11V
9V
7V
M195GB063DN.xls - 9
P
cond(t)
= V
CEsat(t)
I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
I
C(t)
V
CE(TO)(Tj)
1,2 0,001 (T
j
25) [V]
typ.: r
CE(Tj)
= 0,0045 + 0,00002 (T
j
25) [
]
max.: r
CE(Tj)
= 0,0065 + 0,00002 (T
j
25) [
]
valid for V
GE
= + 15
[V]; I
C
0,3 I
Cn
Fig. 9 Typ. output characteristic, t
p
= 250 s; T
j
= 25 C
Fig. 10 Typ. output characteristic, t
p
= 250 s; T
j
= 125 C
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
+2
1
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, t
p
= 250 s; V
CE
= 20 V
T
j
= 150 C
V
GE
15V
B 6 16
000829
by SEMIKRON
SKM 195 GB 063 DN ...
0
4
8
12
16
20
0
200
400
600
800
Q
Gate
nC
V
GE
V
100V
300V
M195GB063DN.xls - 13
10
100
1000
10000
0
10
20
30
40
50
60
R
G
t
ns
t
doff
t
don
t
r
t
f
M195GB063DN.xls - 16
0
0,4
0,8
1,2
1,6
2
2,4
2,8
0
50
100
150
200
I
F
A
E
offD
mJ
25
12
50
8
R
G
=
5
M195GB063DN.xls - 18
0
40
80
120
160
200
0
0,4
0,8
1,2
1,6
2
V
F
V
I
F
A
T
j
=125C, typ.
Tj=25C, typ.
Tj=125C, max.
Tj=25C, max.
M195GB063DN.xls - 17
10
100
1000
0
100
200
300
400
500
I
C
A
t
ns
t
doff
t
don
t
r
t
f
M195GB063DN.xls - 15
0,1
1
10
100
0
10
20
30
V
CE
V
C
nF
C
ies
C
oes
C
res
M195GB063DN.xls - 14
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
V
GE
= 0 V
f = 1 MHz
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
T
j
= 125 C
V
CC
= 300 V
V
GE
= 15 V
I
C
= 200 A
ind. load
I
Cpuls
= 200 A
T
j
= 125 C
V
CC
= 300 V
V
GE
= 15 V
R
Gon
= 8
R
Goff
= 8
ind. load
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
by SEMIKRON
000829
B 6 17
SKM 195 GB 063 DN ...
0
20
40
60
80
100
120
140
160
180
0
1000
2000
3000
4000
5000
di
F
/dt
A/s
I
RR
A
25
12
50
8
R
G
=
5
M195GB063DN.xls - 23
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
I
F
A
I
RR
A
25
12
50
8
R
G
5
M195GB063DN.xls - 22
0
2
4
6
8
10
12
14
16
18
0
1000
2000
3000
4000
5000
6000
di
F
/dt
A/s
Q
rr
C
I
F
=
150 A
100 A
75 A
50 A
25
12
50
8
R
G
=
5
200 A
M195GB063DN.xls - 24
0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
t
p
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
M195GB063DN.xls - 19
0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
t
p
M195GB063DN.xls - 20
Fig. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
f
Fig. 24 Typ. CAL diode recovered charge
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
I
F
= 200 A
V
R
= 300 V
T
j
= 125 C
V
GE
= 15 V
Fig. 22 Typ. CAL diode peak reverse recovery
current I
RR
= f (I
F
; R
G
)
Fig. 23 Typ. CAL diode peak reverse recovery current
I
RR
= f (di/dt)
B 6 18
000829
by SEMIKRON
SKM 195 GB 063 DN ...
SEMITRANS 2N (low inductance)
Case D 93
UL Recognized
File no. E 63 532
SKM 195 GB 063 DN
Dimensions in mm
Case outline and circuit diagrams
Mechanical Data
Symbol Conditions
Values
Units
min.
typ.
max.
M
1
M
2
a
w
to heatsink, SI Units
(M6)
to heatsink, US Units
for terminals, SI Units
(M5)
for terminals, US Units
3
27
2,5
22
5
44
5
44
5x9,81
160
Nm
lb.in.
Nm
lb.in.
m/s
2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Eight devices are supplied in one
SEMIBOX A without mounting hard-
ware, which can be ordered separa-
tely under Ident No. 33321100 (for
10 SEMITRANS 2)
Larger packing units of 20 pieces
are used if suitable
SKM 195 GAL 063 DN
Case D 94 (
D 93)
SKM 195 GAR 063 DN
Case D 95 (
D 93)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or
implied is made regarding delivery, performance or suitability.
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