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Электронный компонент: SKM195GB124DN

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short circuits: <1000
time between short
circuits: >1s
di/dt= 1000 A/s
3000 A/s
5000 A/s
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P
cond(t)
= V
CEsat(t)
I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
I
C(t)
V
CE(TO)(Tj)
1,29 + 0,0001 (T
j
25) [V]
typ.: r
CE(Tj)
= 0,0061 + 0,000022 (T
j
25) [
]
max.: r
CE(Tj)
= 0,0077 + 0,000022 (T
j
25) [
]
valid for V
GE
= + 15
[V]; I
C
> 0,3 I
Cnom
Fig. 9 Typ. output characteristic, t
p
= 80 s; 25 C
Fig. 10 Typ. output characteristic, t
p
= 80 s; 125 C
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
+2
1
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, t
p
= 80 s; V
CE
= 20 V
T
j
= 150 C
V
GE
15V
B 6 28
010503
by SEMIKRON
SKM 195 GB 124 DN ...
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Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
V
GE
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F
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SEMITRANS 2N (low inductance)
Case D 93
UL Recognized
File no. E 63 532
6.0 *% '1
Dimensions in mm
Case outline and circuit diagrams
Mechanical Data
Symbol Conditions
Values
Units
min.
typ.
max.
M
1
M
2
a
w
to heatsink, SI Units
(M6)
to heatsink, US Units
for terminals, SI Units
(M5)
for terminals, US Units
3
27
2,5
22






5
44
5
44
5x9,81
160
Nm
lb.in.
Nm
lb.in.
m/s
2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Twenty devices are supplied in one
SEMIBOX D without mounting hard-
ware, which can be ordered separa-
tely under Ident No. 33321100 (for
10 SEMITRANS 2)
Larger packing units of 20 pieces
are used if suitable
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