by SEMIKRON
0898
B 6
259
Absolute Maximum Ratings
Values
Symbol Conditions
1)
Units
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
R
GE
= 20 k
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
per IGBT, T
case
= 25 C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
1700
1700
220 / 150
440 / 300
20
1250
40 ... +150 (125)
4000
Class F
40/125/56
V
V
A
A
V
W
C
V
Diodes
8)
Inverse
Series
6)
I
F
= I
C
I
FM
= I
CM
I
FSM
I
2
t
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 C
t
p
= 10 ms; T
j
= 150 C
150 / 100
400 / 300
1450
10500
230 / 150
440 / 300
2200
24000
A
A
A
A
2
s
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
V
CEsat
g
fs
V
GE
= 0, I
C
= 3 mA
V
GE
= V
CE
, I
C
= 10 mA
V
GE
= 0
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
V
GE
= 20 V, V
CE
= 0 V
I
C
= 150 A
V
GE
= 15 V;
I
C
= 200 A
T
j
= 25 (125) C
V
CE
= 20 V, I
C
= 150 A
V
CES
4,8
54
5,5
3,4(4,5)
3,8(5,5)
6,2
1,5
4,5
400
3,9(5)
V
V
mA
mA
nA
V
V
S
C
CHC
C
ies
C
oes
C
res
L
CE
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
20
2
0,55
200
20
pF
nF
nF
nF
nH
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
V
CC
= 1200 V
V
GE
= + 15 V / 15 V
I
C
= 150 A, ind. load
R
Gon
= R
Goff
= 4
T
j
= 125 C
580
100
750
40
95
45
ns
ns
ns
ns
mWs
mWs
Inverse Diode
8)
V
F
= V
EC
V
F
= V
EC
V
TO
r
T
I
RR
Q
rr
I
F
= 150 A
V
GE
= 0 V;
I
F
= 200 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 150 A; T
j
= 25 (125) C
2)
I
F
= 150 A; T
j
= 25 (125) C
2)
2,2(1,9)
2,4(2,2)
1,3
4,5
60(85)
15(38)
2,7(2,3)
1,5
6,2
V
V
V
m
A
C
Series Diode
8) 6)
V
F
= V
EC
V
F
= V
EC
V
TO
r
T
I
RR
Q
rr
I
F
= 200 A
V
GE
= 0 V;
I
F
= 300 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 200 A; T
j
= 25 (125) C
2)
I
F
= 200 A; T
j
= 25 (125) C
2)
2,2(1,9)
2,4(2,2)
1,3
4
100(150)
24(58)
2,7(2,3)
1,5
4,5
V
V
V
m
A
C
Thermal Characteristics
R
thjc
R
thjc
R
thch
per IGBT
per inverse/series diode
per module
0,1
0,32/0,20
0,038
C/W
C/W
C/W
Features
N channel, Homogeneous
Silicon structure (NPT-IGBT)
Low inductance case
Very low tail current with low
temperature dependence
High short circuit capability,
self limiting to 6 * I
cnom
Latch-up free
Fast & soft inverse CAL diodes
8)
Isolated copper baseplate using
DCB Direct Copper Bonding
Large clearance (13 mm) and
creepage distances (20 mm).
Typical Applications
Bidirectional switches as
"reverse blocking" IGBT
Regenerative braking
Quasi resonant inverters
DC bus voltage 750 - 1200 V
DC
Public transport (auxiliary syst.)
Switching (not for linear use)
1)
T
case
= 25 C, unless otherwise
specified
2)
I
F
= I
C
, V
R
= 1200 V,
di
F
/dt = 1000 A/
s, V
GE
= 0 V
6)
The series diodes have the data of
the inverse diodes of
SKM 300 GA 173 D
8)
CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data
B 6
260
Diagrams of IGBT
B 6
254...
of series diode
B 6
266
fig. 17, 18, 20 to 24
GAX
GAY
SEMITRANS 3
SEMITRANS
M
IGBT Modules
SKM 200 GAX 173 D
6)
SKM 200 GAY 173 D
6)
by SEMIKRON
B 6 260
SKM 200 GAX(Y) 173 D
0898
SEMITRANS 3
Case D 56
UL Recognized
File no. E 63 532
SKM 200 GB 173 D
Dimensions in mm
SKM 200 GAX 173 D
Case D 57 (
D 56)
SKM 200 GAY 173 D
Case D 58 (
D 56)
Case outline and circuit diagrams
6)
Series diode
B 6 259, remark 6.
Mechanical Data
Symbol Conditions
Values
Units
min.
typ.
max.
M
1
M
2
a
w
to heatsink, SI Units
(M6)
to heatsink, US Units
for terminals, SI Units
(M5)
for terminals, US Units
3
27
2,5
22
5
44
5
44
5x9,81
325
Nm
lb.in.
Nm
lb.in.
m/s
2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Three devices are supplied in one
SEMIBOX A without mounting
hardware, which can be ordered
separately under Ident No.
33321100 (for 10 SEMITRANS 3).
Larger packing units of 12 and 20
pieces are used if suitable
Accessories
B 6 4.
SEMIBOX
C 1.
by SEMIKRON
B 6 254
0898
SKM 200 GB 173 D ...
T
j
= 125 C
V
CE
= 1200 V
V
GE
= + 15 V
R
G
= 4
1 pulse
T
C
= 25 C
T
j
< 150 C
T
j
< 150 C
V
GE
= + 15 V
t
sc
< 10
s
L
ext
< 50 nH
I
C
= 150 A
T
j
= 125 C
V
CE
= 1200 V
V
GE
= + 15 V
I
C
= 150 A
T
j
< 150 C
V
GE
= + 15 V
R
Goff
= 4
I
C
= 150 A
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
0*%[OV
,
&
$
(
P:V
43
411
0*%[OV
5
*
(
P:V
43
411
by SEMIKRON
B 6 255
0898
T
j
= 150 C
V
GE
> 15 V
V
CC
= 1200 V
I
C
= 150 A
R
G
= 4
L
ext
50 nH
self-limiting
t
p
= 10
s
P
cond(t)
= V
CEsat(t)
. I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
. I
C(t)
V
CE(TO)(Tj)
1,9 + 0,003 (T
j
- 25) [V]
r
CE(Tj)
= 0,011 + 0,00004 (T
j
- 25) [
]
valid for V
GE
= + 15
+
2
-
1
[V]; I
C
0,3 I
Cnom
Fig. 7 Short circuit current vs. turn-on gate voltage
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
Fig. 9 Typ. output characteristic, t
p
= 80
s; T
j
= 25 C
Fig. 10 Typ. output characteristic, t
p
= 80
s; T
j
= 125 C
Fig. 11 Typ. saturation characteristic (IGBT)
Fig. 12 Typ. transfer characteristic, t
p
= 80
s; V
CE
= 20 V
Calculation elements and equations
9
V
CE
$
I
C
17V
15V
13V
11V
9V
7V
9
V
CE
$
I
C
17V
15V
13V
11V
9V
7V
by SEMIKRON
B 6 256
SKM 200 GB 173 D ...
0898
PDF 
ZIP