SEMITRANS
TM
3
IGBT Modules
SKM 200GB173D
SKM 200GB173D1
SKM 200GAL173D
SKM 200GAR173D
Features
Typical Applications
GB
GAL
GAR
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
IGBT
Inverse diode
Freewheeling diode
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
IGBT
Inverse diode
FWD
Thermal characteristics
Mechanical data
SKM 200GB173D
1
14-09-2005 RAA
by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
SKM 200GB173D
2
14-09-2005 RAA
by SEMIKRON
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 10 Transient thermal impedance of FWD
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 200GB173D
3
14-09-2005 RAA
by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 200GB173D
4
14-09-2005 RAA
by SEMIKRON
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