SEMITRANS
M
IGBT Modules
SKM 40 GD 123 D
SKM 40 GD 123 D L*)
SKM 40 GDL 123 D **)
GD
GDL **)
Features
MOS input (voltage controlled)
N channel, homogeneous Si
Low inductance case
Very low tail current with low
temperature dependence
High short circuit capability,
self limiting to 6 * I
cnom
Latch-up free
Fast & soft inverse CAL
diodes
8)
Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
Large clearance (9 mm) and
creepage distances (13 mm).
Typical Applications
Switched mode power supplies
Three phase inverters for
AC motor speed control
Pulse frequencies also above
15 kHz
1)
T
case
= 25
C, unless otherwise
specified
2)
I
F
= I
C
, V
R
= 600 V,
di
F
/dt = 500 A/
s
,
V
GE
= 0 V
3)
Use V
GEoff
= -5 ... -15 V
5)
See fig. 2 + 3; R
Goff
= 40
8)
CAL = Controlled Axial Lifetime
Technology.
*) Main terminals = 2 mm dia.
outline
B 6 68
**) Sevenpack, picture
B6 - 99
Cases and mech. data
B6 - 74
Sixpack and Sevenpack
Sixpack
Absolute Maximum Ratings
Values
Symbol
Conditions
1)
Units
V
CES
1200
V
V
CGR
R
GE
= 20 k
1200
V
I
C
T
case
= 25/80
C
40 / 30
A
I
CM
T
case
= 25/80
C; t
p
= 1 ms
70 / 50
A
V
GES
20
V
P
tot
per IGBT, T
case
= 25
C
220
W
T
j
, (T
stg
)
40 . . .+150 (125)
C
V
isol
AC, 1 min.
2 500
V
humidity
DIN 40 040
Class F
climate
DIN IEC 68 T.1
40/125/56
Inverse Diode
I
F
= I
C
T
case
= 25/80
C
45 / 30
A
I
FM
= I
CM
T
case
= 25/80
C; t
p
= 1 ms
70 / 50
A
I
FSM
t
p
= 10 ms; sin.; T
j
= 150 C
350
A
I
2
t
t
p
= 10 ms; T
j
= 150 C
600
A
2
s
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
V
(BR)CES
V
GE
= 0, I
C
= 0,8 mA
V
CES
V
V
GE(th)
V
GE
= V
CE
, I
C
= 1 mA
4,5
5,5
6,5
V
I
CES
V
GE
= 0
T
j
= 25
C
0,1
1
mA
V
CE
= V
CES
T
j
= 125
C
3
mA
I
GES
V
GE
= 20 V, V
CE
= 0
200
nA
V
CEsat
I
C
= 25 A
V
GE
= 15 V;
2,5(3,1)
3(3,7)
V
V
CEsat
I
C
= 40 A
T
j
= 25 (125)
C
3,1(3,9)
V
g
fs
V
CE
= 20 V, I
C
= 25 A
20
S
C
CHC
per IGBT
300
pF
C
ies
V
GE
= 0
1600
2100
pF
C
oes
V
CE
= 25 V
250
300
pF
C
res
f = 1 MHz
110
150
pF
L
CE
60
nH
t
d(on)
V
CC
= 600 V
70
ns
t
r
V
GE
= + 15 V / - 15 V
3)
55
ns
t
d(off)
I
C
= 25 A, ind. load
400
ns
t
f
R
Gon
= R
Goff
= 40
40
ns
E
on
5)
T
j
= 125
C
3,8
mWs
E
off
5)
2,3
mWs
Inverse Diode
8)
V
F
= V
EC
I
F
= 25 A
V
GE
= 0 V;
2,0(1,8)
2,5
V
V
F
= V
EC
I
F
= 40 A
T
j
= 25 (125)
C
2,3(2,1)
V
V
TO
T
j
= 125 C
1,1
1,2
V
r
T
T
j
= 125
C
25
44
m
I
RRM
I
F
= 25 A;
T
j
= 25 (125)
C
2)
19(25)
A
Q
rr
I
F
= 25 A;
T
j
= 25 (125)
C
2)
1,5(4,5)
C
Thermal Characteristics
R
thjc
per IGBT
0,56
C/W
R
thjc
per diode
1,0
C/W
R
thch
per module
0,05
C/W
by SEMIKRON
0898
B 6 69
by SEMIKRON
B 6 70
SKM 40 GD 123 D ...
0898
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
R
G
= 40
1 pulse
T
C
= 25 C
T
j
< 150 C
T
j
< 150 C
V
GE
= + 15 V
t
sc
< 10
s
L < 50 nH
I
C
= 25 A
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 25 A
T
j
< 150 C
V
GE
= + 15 V
R
Goff
= 40
I
C
= 25 A
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
M040GD12.xls -2
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T
j
= 150 C
V
GE
> 15 V
P
cond(t)
= V
CEsat(t)
. I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
. I
C(t)
V
CE(TO)(Tj)
1,5 + 0,002 (T
j
- 25) [V]
typ.: r
CE(Tj)
=
0,040 + 0,00016 (T
j
- 25) [
]
max.: r
CE(Tj)
=
0,060 + 0,00020 (T
j
- 25) [
]
valid for V
GE
= + 15
+
2
-
1
[V]; I
C
0,3 I
Cn
Fig. 9 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 10 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 11 Saturation characteristic (IGBT)
Fig. 12 Typ. transfer characteristic, t
p
= 80
s; V
CE
= 20 V
Calculation elements and equations
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
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9
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9
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by SEMIKRON
B 6 72
SKM 40 GD 123 D ...
0898
V
GE
= 0 V
f = 1 MHZ
C
ies
C
oes
C
res
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 25 A
induct. load
I
Cpuls
= 25 A
T
j
= 125 C
V
CE
= 600 V
V
GE
= + 15 V
R
Gon
= 40
R
Goff
= 40
induct. load
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
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by SEMIKRON
B 6 73
0796
by SEMIKRON
B 6 74
SKM 40 GD 123 D ...
0898
Dimensions in mm
This is an electrostatic discharge
sensitive device (ESD). Please ob-
serve the international standard
IEC 747-1, Chapter IX.
Two devices are supplied in one
SEMIBOX A.
Larger packing units (10 and 20
pieces) are used if suitable.
SEMIBOX
C 1.
Mechanical Data
Symbol
Conditions
Values
Units
min.
typ.
max.
M
1
to heatsink, SI Units
(M5)
4
5
Nm
to heatsink, US Units
35
44
lb.in.
a
5x9,81
m/s
2
w
175
g
Case outlines and circuit diagrams
SEMITRANS Sixpack
Case D 67
UL Recognized
File no. E 63 532
SKM 40 GD 123 D
SEMITRANS Sevenpack
Case D 73
UL Recognized
File no. E 63 532
SKM 40 GDL 123 D
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