by SEMIKRON
000828
B 6 73
SKM 500 GA 174 D
Absolute Maximum Ratings
Values
Symbol Conditions
1)
Units
V
CES
V
CGR
I
C
; I
CN
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
R
GE
= 20 k
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
per IGBT, T
case
= 25 C
AC, 1 min.
4)
IEC 60721-3-3
IEC 68 T.1
1700
1700
600 / 440
5)
1200 / 880
20
3100
40 ... +150 (125)
3400
class 3K7/IE32
40/125/56
V
V
A
A
V
W
C
V
Inverse Diode
8)
I
F
= I
C
I
FM
= I
CM
I
FSM
I
2
t
T
case
= 25/80 C
T
case
= 25/80 C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 C
t
p
= 10 ms; T
j
= 150 C
600 / 440
1200 / 880
4400
96800
A
A
A
A
2
s
Characteristics
Symbol Conditions
1)
min.
typ.
max.
Units
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
g
fs
V
GE
= 0, I
C
= 8 mA
V
GE
= V
CE
, I
C
= 18 mA
V
GE
= 0
T
j
= 25 C
V
CE
= V
CES
T
j
= 125 C
V
GE
= 20 V, V
CE
= 0
I
C
= 400 A
V
GE
= 15 V;
I
C
= 500 A
T
j
= 25 (125) C
V
CE
= 20 V, I
C
= 400 A
V
CES
4,5
5,5
0,1
16
2,8(3,2)
3,1(3,7)
220
6,5
1
0,3
3,3(3,6)
V
V
mA
mA
A
V
V
S
C
CHC
C
ies
C
oes
C
res
L
CE
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
27
3,8
1,3
1,4
20
nF
nF
nF
nF
nH
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
V
CC
= 1200 V
V
GE
= 15 V / +15 V
3)
I
C
= 400 A, ind. load
R
Gon
= R
Goff
= 3
T
j
= 125 C (V
CC
= 900 V/1200 V)
L
S
= 60 nH (V
CC
= 900 V/1200 V)
350
100
1100
100
170/300
135/210
ns
ns
ns
ns
mWs
mWs
Inverse Diode
8)
V
F
= V
EC
V
F
= V
EC
V
TO
r
t
I
RRM
Q
rr
I
F
= 400 A
V
GE
= 0 V;
I
F
= 500 A
T
j
= 25 (125) C
T
j
= 125 C
T
j
= 125 C
I
F
= 400 A; T
j
= 25 (125) C
2)
I
F
= 400 A; T
j
= 25 (125) C
2)
2,15(1,8)
2,3(2,0)
1,3
1,6
270(550)
70(117)
2,4(2,2)
1,5
2,1
V
V
V
m
A
C
Thermal characteristics
R
thjc
R
thjc
R
thch
per IGBT
per diode D
per module
0,040
0,070
0,038
C/W
C/W
C/W
SEMITRANS
M
Low Loss IGBT Modules
SKM 500 GA 174 D
Features
N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
Low inductance case
High short circuit capability,
self limiting
Fast & soft inverse CAL diodes
8)
Without hard mould
Large clearance (13 mm) and
creepage distances (20 mm)
Typical Applications
AC inverter drives on mains
575 - 750 V
AC
DC bus voltage 750 - 1200 V
DC
Public transport (auxiliary syst.)
Switching (not for linear use)
1)
T
case
= 25 C, unless otherwise
specified
2)
I
F
= I
C
, V
R
= 1200 V,
di
F
/dt = 5000 A/
s, V
GE
= 0 V
3)
Use V
GEoff
= 5 ... 15 V
4)
Option V
isol
= 4000V/1 min add suffix
,,H4" - on request
5)
Limited by terminals to I
C(DC)
= 500 A
at T
c
= T
terminal
100 C
8)
CAL = Controlled Axial Lifetime
Technology
GA
SEMITRANS 4
B 6 74
000828
by SEMIKRON
SKM 500 GA 174 D
1
10
100
1000
10000
1
10
100
1000
10000
V
CE
V
I
C
A
t
p =
20s
100s
(DC)
1ms
10ms
m500ga17.xls - 4
0
1000
2000
3000
4000
0
20
40
60
80
100
120
140
160
T
C
C
P
tot
W
m500ga17.xls - 1
0
2
4
6
8
10
12
0
400
800
1200
1600
2000
V
CE
V
I
CSC
/I
C
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
di/dt=1000A/s
3000 A/s
5000 A/s
m500ga17.xls - 6
0
0,5
1
1,5
2
2,5
0
500
1000
1500
2000
V
CE
V
I
Cpuls
/I
C
m500ga17.xls - 5
di/dt=1000A/s
3000 A/s
5000 A/s
0
200
400
600
800
0
5
10
15
20
25
R
G
E
mWs
E
on
E
off
m500ga17.xls - 3
0
200
400
600
800
0
200
400
600
800
I
C
A
E
mWs
E
on
E
off
m500ga17.xls - 2
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
T
j
= 125 C
V
CE
= 1200 V
V
GE
= + 15 V
R
G
= 3
1 pulse
T
C
= 25 C
T
j
150 C
T
j
= 125 C
V
CE
= 1200 V
V
GE
= + 15 V
I
C
= 400 A
T
j
150 C
V
GE
= 15 V
t
sc
10 s
L
ext
< 50 nH
I
C
= 400 A
Not for
linear use
T
j
150 C
V
GE
= 15 V
R
Goff
= 3
I
C
= 400 A
by SEMIKRON
000828
B 6 75
SKM 500 GA 174 D
0
200
400
600
800
1000
0
1
2
3
4
5
V
CE
V
I
C
A
V
GE
=
17V
15V
13V
11V
9V
m500ga17.xls - 10
0
200
400
600
800
0
20
40
60
80
100
120
140
160
T
C
C
I
C
A
m500ga17.xls - 8
FIGUR7.XLS-V1
0
2
4
6
8
10
10
12
14
16
18
20
125C
25C
I
CSC
/I
CN
V
GE
V
0
200
400
600
800
1000
0
2
4
6
8
10
12
14
V
G
V
I
C
A
m500ga17.xls - 12
0
200
400
600
800
1000
0
1
2
3
4
5
V
CE
V
I
C
A
V
GE
=
17V
15V
13V
11V
9 V
m500ga17.xls - 9
P
cond(t)
= V
CEsat(t)
I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
I
C(t)
V
CE(TO)(Tj)
1,6 + 0,001 (T
j
25) [V]
typ.: r
CE(Tj)
= 0,003 + 0,000008 (T
j
25) [
]
max.: r
CE(Tj)
= 0,0041 + 0,000006 (T
j
25) [
]
valid for V
GE
= + 15
[V]; I
C
> 0,3 I
Cnom
Fig. 9 Typ. output characteristic, t
p
= 80 s; 25 C
Fig. 10 Typ. output characteristic, t
p
= 80 s; 125 C
Fig. 7 Short circuit current vs. turn-on gate voltage
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
+2
1
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, t
p
= 80 s; V
CE
= 20 V
T
j
= 150 C
V
GE
15V
see rem.
5)
V
C
= 1200 V
I
C
= 400 A
R
G
= 3
L
ext
50 nH
self-limiting
B 6 76
000828
by SEMIKRON
SKM 500 GA 174 D
0,10
1,00
10,00
100,00
0
10
20
30
V
CE
V
C
nF
C
ies
C
oes
C
res
m500ga17.xls - 14
0
200
400
600
800
0
1
2
3
V
F
V
I
F
A
T
j
= 125C typ.
T
j
= 25C typ.
Tj =125C max.
Tj= 25C max.
m500ga17.xls - 17
M500GA17.XLS-18
0
20
40
60
80
100
0
200
400
600
800
1000
I
F
A
E
offD
mJ
7
4
15
2,7
R
G
=
1,5
10
100
1000
10000
0
5
10
15
20
25
R
G
t
ns
t
doff
t
don
t
r
t
f
m500ga17.xls - 16
10
100
1000
10000
0
200
400
600
800
I
C
A
t
ns
t
doff
tdon
tr
t
f
m500ga17.xls - 15
0
4
8
12
16
20
0
1000
2000
3000
4000
Q
Gate
nC
V
GE
V
800
1200V
m500ga17.xls - 13
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
V
GE
= 0 V
f = 1 MHz
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
T
j
= 125 C
V
CE
= 1200 V
V
GE
= 15 V
I
C
= 400 A
ind. load
I
Cpuls
= 400 A
T
j
= 125 C
V
CE
= 1200 V
V
GE
= 15 V
R
G
= 3
ind. load
V
CC
= 1200 V
T
j
= 125 C
V
GE
= 15 V
by SEMIKRON
000828
B 6 77
SKM 500 GA 174 D
M500GA17.XLS-24
0
20
40
60
80
100
120
140
160
180
200
0
2000
4000
6000
8000
10000
di
F
/dt
A/us
Q
rr
C
I
F
600 A
400 A
200 A
100 A
7
4
15
2,7
R
G
1,5
800 A
M500GA17.XLS-23
0
100
200
300
400
500
600
700
800
0
2000
4000
6000
8000
10000
di
F/
dt
A/us
I
RR
A
7
4
15
2,7
R
G
=
1,5
0,00001
0,0001
0,001
0,01
0,1
0,00001
0,0001
0,001
0,01
0,1
1
t
p
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
m500ga17.xls - 19
M500GA17.XLS-22
0
200
400
600
800
1000
0
200
400
600
800
1000
I
F
A
I
RR
A
7
4
15
2,7
R
G
=
1,5
Fig. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
f
Fig. 22 Typ. CAL diode peak reverse recovery
current I
RR
= f (I
F
; R
G
)
Fig. 23 Typ. CAL diode peak reverse recovery
current I
RR
= f (di/dt)
Fig. 24 Typ. CAL diode recovered charge
V
CC
= 1200 V
T
j
= 125 C
V
GE
= 15 V
V
CC
= 1200 V
T
j
= 125 C
V
GE
= 15 V
I
F
= 400 A
V
CC
= 1200 V
T
j
= 125 C
V
GE
= 15 V
0,0001
0,001
0,01
0,1
0,00001
0,0001
0,001
0,01
0,1
1
s
Z
thJC
K/W
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
t
p
m500ga17.xls - 20
B 6 78
000828
by SEMIKRON
SKM 500 GA 174 D
SEMITRANS 4
Case D 59
UL Recognition
File no. E 63 532
SKM 500 GA 174 D
Dimensions in mm
Case outline and circuit diagram
Mechanical Data
Symbol Conditions
Values
Units
min.
typ.
max.
M
1
M
2
a
w
to heatsink, SI Units
(M6)
to heatsink, US Units
for terminals, SI Units
(M6/M4)
for terminals, US Units
3
27
2,5/1,1
22/10
5
44
5/2
44/18
5x9,81
330
Nm
lb.in.
Nm
lb.in.
m/s
2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Twelve devices are supplied in one
SEMIBOX D without mounting hard-
ware, which can be ordered separa-
tely under Ident No. 33321100
(for 10 SEMITRANS 4)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or
implied is made regarding delivery, performance or suitability.
PDF 
ZIP