by SEMIKRON
B 9 17
Fast Recovery Rectifier
Diodes
SKN 2 F 50
SKR 2 F 50
Features
Small recovered charge
Soft recovery
Up to 1000 V reverse voltage
Hermetic metal cases with
glass insulators
Threaded studs ISO M6
or 1/4-28 UNF
SKN: anode to stud
SKR: cathode to stud
Typical Applications
Inverse diodes for power
transistors, GTO thyristors,
asymmetric thyristors
SMPS, inverters, choppers
For severe ambient conditions
V
RSM
I
FRMS
(maximum values for continuous operation)
V
RRM
100 A
I
FAV
(sin. 180; T
case
= . . . )
50 A (105
C)
50 A (95
C)
t
rr
= 200 ns
V
400
SKN 2 F 50/04
SKR 2 F 50/04
SKN 2 F 50/04 UNF
SKR 2 F 50/04 UNF
600
SKN 2 F 50/06
SKR 2 F 50/06
SKN 2 F 50/06 UNF
SKR 2 F 50/06 UNF
800
SKN 2 F 50/08
SKR 2 F 50/08
SKN 2 F 50/08 UNF
SKR 2 F 50/08 UNF
1000
SKN 2 F 50/10
SKR 2 F 50/10
SKN 2 F 50/10 UNF
SKR 2 F 50/10 UNF
Symbol
Conditions
SKN 2 F 50
SKR 2 F 50 Units
I
FAV
sin.180; (T
case
= . . .); f = 5000 Hz 50 (105
C) 50 (95
C)
A
sin.180/rec.120; T
amb
= 45
C; K5
12/11
12/11
A
K3
18/17
17/16
A
K1,1
33/31
31/29
A
I
FSM
T
vj
= 25
C; 10 ms
1100
800
A
T
vj
= 150
C; 10 ms
940
670
A
i
2
t
T
vj
= 25
C; 8,3 ... 10 ms
6000
3200
A
2
s
T
vj
= 150
C; 8,3 ... 10 ms
4400
2200
A
2
s
Q
rr
T
vj
= 130
C; I
F
= 100 A;
3
C
I
RM
d
iF
=
30
A
s
;
V
R
=
30
V
10
A
I
R
T
vj
= 25
C; V
R
= V
RRM
0,4
mA
T
vj
= 130
C; V
R
= V
RRM
50
mA
t
rr
T
vj
= 25
C
max. 200
ns
I
F = IR
= 1 A
T
vj
= 130
C
typ. 400
ns
V
F
T
vj
= 25
C; I
F
= 50 A
max. 1,8
V
V
(TO)
T
vj
= 150
C
1,2
V
r
T
T
vj
= 150
C
4
m
R
thjc
0,5
0,65
C/W
R
thch
0,25
C/W
T
vj
40 . . . + 150
C
T
stg
55 . . . + 150
C
M
SI units
2,5
Nm
US units
22
lb.in.
a
5 . 9,81
m/s
2
w
approx.
20
g
Case
E10
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