by SEMIKRON
B 9 11
Fast Recovery Rectifier
Diodes
SKN 2 F 17
SKR 2 F 17
SKN 3 F 20
SKR 3 F 20
Features
Small recovered charge
Soft recovery
Up to 1200 V reverse voltage
Hermetic metal cases with
glass insulators
Threaded studs ISO M5 or
10-32 UNF
SKN: anode to stud
SKR: cathode to stud
Typical Applications
Inverse diodes for power
transistors, GTO thyristors
asymmetric thyristors
SMPS, inverters, choppers
For severe ambient conditions
V
RSM
I
FRMS
(maximum values for continuous operation)
V
RRM
41 A
I
FAV
(sin. 180; T
case
= 85
C)
26 A
t
rr
= 150 ns
t
rr
= 250 ns
V
400
SKN 2F17/04
SKR 2F17/04
SKN 2F17/04UNF SKR 2F17/04UNF
600
SKN 2F17/06
SKR 2F17/06
SKN 2F17/06UNF SKR 2F17/06UNF
800
SKN 2F17/08
SKR 2F17/08
SKN 3F20/08
SKR 3F20/08
SKN 2F17/08UNF SKR 2F17/08UNF
SKN 3F20/08UNF SKR 3F20/08UNF
1000
SKN 2F17/10
SKR 2F17/10
SKN 3F20/10
SKR 3F20/10
SKN 2F17/10UNF SKR 2F17/10UNF
SKN 3F20/10UNF SKR 3F20/10UNF
1200
SKN 3F20/12
SKR 3F20/12
SKN 3F20/12UNF SKR 3F20/12UNF
Symbol
Conditions
SKN 2 F 17 SKN 3 F 20
Units
SKR 2 F 17 SKR 3 F 20
I
FAV
sin.180; T
case
= 85
C; f=5000 Hz
26
26
A
= 104
C
20
A
= 113
C
17
A
sin.180/rec.120; T
amb
= 5
C; K9
6,7 /6,5
A
K5
10/9,5
A
I
FSM
T
vj
= 25
C; 10 ms
450
375
A
T
vj
= 150
C; 10 ms
380
310
A
i
2
t
T
vj
= 25
C; 8,3 ... 10 ms
1000
700
A
2
s
T
vj
= 150
C; 8,3 ... 10 ms
720
480
A
2
s
Q
rr
T
vj
= 130
C; I
F
= 50 A;
1,0
1,5
C
I
RM
d
iF
dt
=
15
A
s
;
V
R
=
30
V
4,5
5
A
I
R
T
vj
= 25
C; V
R
= V
RRM
max. 0,2
max. 0,2
mA
T
vj
= 130
C; V
R
= V
RRM
max. 16
max. 20
mA
t
rr
T
vj
= 25
C
max. 150
max. 250
ns
I
F
= I
R
= 1 A
T
vj
= 130
C
typ. 300
typ. 500
ns
V
F
T
vj
= 25
C; I
F
= 50 A
max. 2,15
V
V
(TO)
T
vj
= 130
C
1,3
V
r
T
T
vj
= 130
C
12
m
R
thjc
1,2
C/W
R
thch
0,5
C/W
T
vj
40 . . . + 150
C
T
stg
55 . . . + 150
C
M
SI units
1,5
Nm
US units
13
lb.in.
a
5 . 9,81
m/s
2
w
7
g
Case
E7
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