Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 58 C
12
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
100/110
A
I
2
t
I
2
t
for fusing
t =10ms
50
A
2
s
P
GM
Peak Gate Power Dissipation
5.0
W
P
G(AV)
Average Gate Power Dissipation
Over any 20ms period
0.5
W
I
GM
Peak Gate Current
2.0
A
V
GM
Peak Gate Voltage
10
V
V
ISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Mass
2.0
g
BT138F-600
Jan, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 12 A )
High Commutation dv/dt
Isolation Voltage ( V
ISO
= 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
2.T2
3.Gate
1.T1
Symbol
TO-220F
1/6
1
2
3
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
UL : E228720
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
2.0
mA
V
TM
Peak On-State Voltage
I
T
= 15 A, Inst. Measurement
1.65
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
25
mA
I
-
GT1
25
I
-
GT3
25
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -4.0 A/ms,
V
D
=2/3 V
DRM
10
V/
I
H
Holding Current
15
mA
R
th(j-c)
Thermal Impedance
Junction to case
3.7
C/W
BT138F-600
2/6
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(25
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
0
20
40
60
80
100
120
60Hz
50Hz
Surg
e O
n
-
S
t
a
t
e
Cur
ren
t
[
A
]
Time (cycles)
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
50
60
70
80
90
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
All
o
w
a
bl
e Ca
se T
e
mpe
r
ature
[
o
C]
RMS On-State Current [A]
0
3
6
9
12
15
0
2
4
6
8
10
12
14
16
18
20
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
P
o
w
e
r
D
i
ssi
p
a
ti
on
[W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0
10
1
10
2
T
J
= 125
o
C
T
J
= 25
o
C
On-State
C
u
r
r
e
n
t
[
A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
I
GM
(2
A
)
25
P
G(AV)
(0.5W)
P
GM
(5W)
V
GM
(10V)
Gate V
o
l
t
a
g
e
[V
]
Gate Current [mA]
3/6
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
BT138F-600
-50
0
50
100
150
0.1
1
10
I
_
GT3
I
+
GT1
I
_
GT1
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature [
o
C]
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
T
r
ansie
nt
T
h
e
r
m
a
l I
m
pe
dance
[
o
C/
W
]
Time (sec)
4/6
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
BT138F-600
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
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