Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage ( V
BE
= 0 )
700
V
V
CEO
Collector-Emitter Voltage ( I
B
= 0 )
400
V
V
EBO
Emitter-Base Voltage ( I
C
= 0 )
9.0
V
I
C
Collector Current
1.5
A
I
CM
Collector Peak Current ( t
P
5 ms )
3.0
A
I
B
Base Current
0.75
A
I
BM
Base Peak Current ( t
P
5 ms )
1.5
A
P
C
Total Dissipation at T
C
= 25 C
40
W
T
STG
Storage Temperature
- 65 ~ 150
C
T
J
Max. Operating Junction Temperature
150
C
Thermal Characteristics
Symbol
Parameter
Value
Units
R
JC
Thermal Resistance, Junction-to-Case
3.12
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
89
C/W
SBR13003
Oct, 2002. Rev. 2
1/6
Features
- Very High Switching Speed (Typical 120ns@1.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 200mV@1.0A/0.25A)
- Wide Reverse Bias S.O.A
General Description
This devices is designed for high voltage, high speed switching
characteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
High Voltage Fast-Switching NPN Power Transistor
2.Collector
3.Emitter
1.Base
Symbol
TO-126
1
2
3
SemiWell
Semiconductor
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
CEV
Collector Cut-off Current
( V
BE
= - 1.5V )
V
CE
= 700V
V
CE
= 700V T
C
= 100 C
-
-
1.0
5.0
mA
V
CEO(sus)
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
I
C
= 10 mA
400
-
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 0.5A I
B
= 0.1A
I
C
= 1.0A I
B
= 0.25A
I
C
= 1.5A I
B
= 0.5A
-
-
0.3
0.5
1.0
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 0.5A I
B
= 0.1A
I
C
= 1.0A I
B
= 0.25A
-
-
1.0
1.2
V
h
FE
DC Current Gain
I
C
= 0.5A V
CE
= 2V
I
C
= 1.0A V
CE
= 2V
10
5
-
30
25
t
on
t
s
t
f
Resistive Load
Turn-On Time
Storage Time
Fall Time
I
C
= 1.0A V
CC
= 125V
I
B1
= 0.2A I
B2
= - 0.2A
T
P
= 25
-
0.2
1.5
0.15
1.0
3.0
0.4
t
s
t
f
Inductive Load
Storage Time
Fall Time
V
CC
= 15V I
C
= 1.0A
I
B1
= 0.2A I
B2
= -0.5A
L = 0.35mH V
clamp
= 300V
-
2.0
0.12
4.0
0.3
t
s
t
f
Inductive Load
Storage Time
Fall Time
V
CC
= 15V I
C
= 1.0A
I
B1
= 0.2A I
B2
= -0.5A
L = 0.35mH V
clamp
= 300V
T
C
= 100 C
-
2.4
0.15
5.0
0.4
SBR13003
2/6
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
0.1
1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
= 25
o
C
T
J
= 125
o
C
V
BE
, Ba
se
-
E
mi
tt
e
r
Vo
l
t
a
g
e
[V]
I
C
, Collector Current [A]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
T
J
= 25
o
C
t
st
g
, Ti
me
[u
s]
I
C
, Collector Current [A]
0.0
0.3
0.6
0.9
1.2
1.5
1.8
100
1000
T
J
= 25
o
C
t
f
, Ti
m
e
[
n
s]
I
C
, Collector Current [A]
0.1
1
0.01
0.1
1
10
T
J
= 25
o
C
T
J
= 125
o
C
V
CE
,
Collect
o
r
-
E
mit
t
er Volt
ag
e [
V
]
I
C
, Collector Current [A]
0.01
0.1
1
0
10
20
30
40
T
J
= 25
o
C
T
J
= 125
o
C
h
FE
,
DC Cu
rre
nt
Gai
n
I
C
, Collector Current [A]
0
1
2
3
4
5
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
I
B
= 500mA
I
B
= 400mA
I
B
= 300mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
I
B
= 0mA
I
C
,
Co
ll
ect
o
r
Curre
nt
[
A
]
V
CE
, Collector-Emitter Voltage [V]
SBR13003
3/6
Fig 1. Static Characteristics
Fig 2. DC Current Gain
Fig 3. Collector-Emitter Saturation Voltage
Fig 4. Base-Emitter Saturation Voltage
Fig 5. Resistive Load Fall Time
Fig 6. Resistive Load Storage Time
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
Notes :
V
CE
= 5V
V
CE
= 1V
Note :
h
FE
= 5
Note :
h
FE
= 5
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
s
1ms
100
s
DC
I
C
, C
o
l
l
ecto
r
C
u
r
re
nt
[
A
]
V
CE
, Collector-Emitter Clamp Voltage [V]
0
50
100
150
200
0
25
50
75
100
125
P
o
we
r
De
r
a
t
i
n
g
F
a
c
t
o
r
(
%
)
T
C
, Case Temperature (
o
C)
0
100
200
300
400
500
600
700
800
0.0
0.4
0.8
1.2
1.6
-3V
-5V
-1.5V
V
BE
(off) = -9V
I
C
, C
o
l
l
ecto
r
C
u
rr
e
n
t
[A]
V
CE
, Collector-Emitter Clamp Voltage [V]
4/6
SBR13003
Fig 8. Reverse Biased Safe Operation
Areas
Fig 7. Safe Operation Areas
Fig 9. Power Derating Curve
Single Pulse
Notes :
T
J
100 C
I
B1
= 1 A
R
BB
= 0
L
C
= 0.35mH
I
B1
V
BE
(off)
R
BB
I
B
I
C
V
Clamp
V
CC
V
CE
D.U.T
L
C
I
B1
V
BE
(off)
R
BB
I
B
I
C
V
CC
V
CE
D.U.T
R
C
SBR13003
5/6
Inductive Load Switching & RBSOA Test Circuit
Resistive Load Switching Test Circuit
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
7.5
7.9
0.295
0.311
B
10.8
11.2
0.425
0.441
C
14.2
14.7
0.559
0.579
D
2.7
2.9
0.106
0.114
E
3.8
0.150
F
2.5
0.098
G
1.2
1.5
0.047
0.059
H
2.3
0.091
I
4.6
0.181
J
0.48
0.62
0.019
0.024
K
0.7
0.86
0.028
0.034
L
1.4
0.055
3.2
0.126
SBR13003
TO-126 Package Dimension
6/6
1. Base
2. Collector
3. Emitter
A
B
C
D
E
F
G
3
2
1
H
I
J
K
L
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