Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz, Gate open
600
V
I
T(RMS)
R.M.S On-State Current
T
C
=77 C, Full Sine wave
2
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
20/22
A
I
2
t
I
2
t
for Fusing
tp = 10ms
2
A
2
s
P
GM
Peak Gate Power Dissipation
T
C
= 77 C, Pulse width
1.0
us
5
W
P
G(AV)
Average Gate Power Dissipation
Over any 20ms period
0.5
W
I
GM
Peak Gate Current
tp = 20us, T
J
=125C
2
A
V
GM
Peak Gate Voltage
tp = 20us, T
J
=125C
5
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Mass
0.11
g
STM2A60
Apr, 2004. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 2 A )
High Commutation dv/dt (3-Quadrant )
Surface Mount Package
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay.
2.T2
3.Gate
1.T1
Symbol
1/6
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Preliminary
SOT-223
1
3
2
2
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
0.5
mA
V
TM
Peak On-State Voltage
I
T
= 2.1 A, Inst. Measurement
1.6
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
20
mA
I
-
GT1
20
I
-
GT3
20
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
dv/dt
Critical Rate of Rise Off-State
Voltage
T
J
= 125 C, V
D
=2/3 V
DRM
exponential waveform, gate open circuit
1000
V/
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -0.75 A/ms,
V
D
=2/3 V
DRM
5.0
V/
I
H
Holding Current
5
mA
R
th(j-sp)
Thermal Impedance
Junction to solder point
15
C/W
R
th(j-a)
Thermal Impedance
(pcb mounted)
Junction to Ambient(minimum footprint)
156
C/W
Junction to Ambient(pad area as in fig 11.)
70
C/W
STM2A60
2/6
Notes :
1. Pulse Width
300us , Duty cycle
2%
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
0
5
10
15
20
25
30
35
60Hz
50Hz
S
u
r
g
e
O
n
-S
ta
te
C
u
rr
e
n
t
[
A
]
Time (cycles)
0
1
2
3
4
5
70
80
90
100
110
120
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Al
lowable
C
a
s
e
Tem
per
at
ure
[
o
C]
RMS On-State Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Power Dissipat
i
on [W
]
RMS On-State Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
10
2
125
o
C
25
o
C
On
-
S
t
a
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
25
P
G(AV)
= 0.5W
P
GK
= 5W
I
GM
=2
A
V
GK
= 5V
V
GD
= 0.2V
Gate Volta
g
e [V]
Gate Current [mA]
STM2A60
3/6
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
4/6
STM2A60
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
-50
0
50
100
150
0.1
1
10
I
+
GT1
I
-
GT1
I
-
GT3
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
T
r
ans
i
e
nt T
her
m
a
l
I
m
peda
nce [
o
C/
W
]
Time (sec)
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
Mounting Instructions
STM2A60
5/6
Printed Circuit Board
Dimensions in mm.
Fig 10. Soldering pattern for surface mounting SOT-223
Fig 11. PCB for thermal resistance and power rating for SOT-223
(PCB; FR4 epoxy glass-1.6mm thick, copper laminate-35um thick)
Dimensions in mm.
1. T1
2. T2
3. Gate
4. T2
Dim.
mm
Inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.80
0.071
A1
0.02
0.1
0.0008
0.004
B
0.60
0.70
0.85
0.024
0.027
0.034
B1
2.90
3.00
3.15
0.114
0.118
0.124
C
0.24
0.26
0.35
0.009
0.010
0.014
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.3
0.090
e1
4.6
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
V
10 Max
SOT-223 Package Dimension
6/6
STM2A60
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