2004 IXYS All rights reserved
1 - 2
442
MWI 50-12 E6K
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Features
NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
AC drives
power supplies with power factor
correction
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
51
A
I
C80
T
C
= 80C
36
A
I
CM
V
GE
=
15 V; R
G
= 39
; T
VJ
= 125C
70
A
V
CEK
RBSOA; clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= 900 V; V
GE
=
15 V; R
G
= 39
; T
VJ
= 125C
10
s
SCSOA; non-repetitive
P
tot
T
C
= 25C
210
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25C
2.4
2.9
V
T
VJ
= 125C
2.8
V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25C
0.3
mA
T
VJ
= 125C
1.2
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
90
ns
t
r
50
ns
t
d(off)
440
ns
t
f
50
ns
E
on
5.4
mJ
E
off
2.6
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
2000
pF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 35 A
150
nC
R
thJC
(per IGBT)
0.6 K/W
R
thCH
0.2
K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 35 A
V
GE
= 15 V; R
G
= 39
I
C25
= 51 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.4 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
9, 24
14
13
6
5
4
3
22
21
2
1
18
17
15, 16
11, 12
19, 20
8
7
NTC
2004 IXYS All rights reserved
2 - 2
442
MWI 50-12 E6K
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.0 V; R
0
= 44 m
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.5 V; R
0
= 14 m
Thermal Response
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
operating
-40...+125
C
T
VJM
-40...+150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M4)
2.0 - 2.2
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance in air
12.7
mm
Weight
40
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
49
A
I
F80
T
C
= 80C
32
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 35 A; V
GE
= 0 V; T
VJ
= 25C
2.6
2.9
V
T
VJ
= 125C
1.8
V
I
RM
35
A
t
rr
150
ns
R
thJC
(per Diode)
0.9 K/W
R
thCH
0.3
K/W
I
F
= 35 A; di
F
/dt = -600 A/s; T
VJ
= 100C
V
R
= 600 V; V
GE
= 0 V
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
4.45
4.7
5.0 k
B
25/85
3510
K
Dimensions in mm (1 mm = 0.0394")
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