221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4998, REV. -
RAD TOLERANT LOW R
DS
HERMETIC
POWER MOSFET - P-CHANNEL
FEATURES:
100 Volt, 0.023 Ohm, 90A MOSFET (current limited to 50A by package)
Characterized for V
GS
of 4.5V for Logic Level Drive
Total Dose Characterized to 300 Krad
Single Event Effect Capability Characterized to 60 MeVcm
2
/mg LET
Isolated Hermetic Metal Package; Ultra Low R
DS (on)
Ceramic Seals with Glidcop leads
Also available with glass seals and copper core alloy 52 leads
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
V
GS
- -
20
Volts
ON-STATE DRAIN CURRENT
I
D25
- -
-
50
Amps
PULSED DRAIN CURRENT
I
DM
- -
-
90
Amps
OPERATING AND STORAGE TEMPERATURE
T
J
/T
STG
-55 - +150
C
TOTAL DEVICE DISSIPATION
P
D
- -
225
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R
JC
- -
0.55
C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= - 250
A
BV
DSS
-100 -
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= - 10V, I
D
= - 20A
V
GS
= - 4.5V, I
D
= - 15A
R
DS(ON)
-
-
0.019
0.021
0.023
0.025
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= - 250
A
V
GS(th)
- 1
-
- 3
Volts
FORWARD TRANSCONDUCTANCE
V
DS
= - 15V, I
D
= - 20A
g
fs
-
80
- S(1/
)
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25
C
T
J
= 125
C
I
DSS
-
-
- 1
- 500
A
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
I
GSS
- -
100
-100
nA
TURN ON DELAY TIME V
DD
= - 50V
RISE TIME I
D
= - 50A
TURN OFF DELAY TIME V
GS
= - 10V
FALL TIME R
G
= 1
t
d(ON)
t
r
t
d(OFF)
t
f
- 20
510
145
870
30
855
220
1300
nsec
DIODE FORWARD VOLTAGE I
F
= - 20A, V
GS
= 0V
Pulse test, t
300 s, duty cycle d 2 %
V
SD
-
- 1.0
- 1.5
Volts
REVERSE RECOVERY TIME T
J
= 25
C,
I
F
= - 20A, V
R
= - 50V
di/dt = - 100A/
sec
t
rr
-
80
120
nsec
INPUT CAPACITANCE V
GS
= 0 V,
OUTPUT CAPACITANCE V
DS
= - 50 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
C
iss
C
oss
C
rss
- 11100
700
1700
-
pF
SBF50P10-023L
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
Post-Total Dose (up to TID ratings) Irradiation Data
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= -250
A
BV
DSS
-100 -
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= -10V, I
D
= -20A
V
GS
= - 4.5V, I
D
= - 15A
R
DS(ON)
-
0.019
0.021
0.023
0.025
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250
A
V
GS(th)
-1 - -3 Volts
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25
C
I
DSS
-
-
-1
A
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
I
GSS
- -
100
-100
nA
DIODE FORWARD VOLTAGE I
F
= -20A, V
GS
= 0V
Pulse test, t
300 s, duty cycle d 2 %
V
SD
-
-
1.0
-1.5 Volts
Single Event Effect Safe Operating Area
V
DS
(V)
Ion
LET
(MeVcm
2
/mg)
Energy
(MeV)
Range
(
m)
V
GS
=0V
V
GS
= 5V
V
GS
= 10V
V
GS
= 15V V
GS
= 20V
Br
37.47 278 36.1
-100 -100 -100 -100 -100
I 59.72 320 31.1
-100 -100 -100 -100 -100
SEE Safe Operation Area
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS (V)
VD
S (
V
)
Br
I
SBF50P10-023L
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
SBF50P10-023L
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
MECHANICAL DIMENSIONS: in Inches / mm
PINOUT TABLE
TO-254CG
(Modified)
DEVICE TYPE
PIN-1
PIN-2
PIN-3
P-CHANNEL MOSFET
MODIFIED TO-254
PACKAGE
DRAIN SOURCE GATE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
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