221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4751, REV. A
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
150
C Operating Temperature
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
V
RWM
-
30
V
Max. Average Forward Current
I
F(AV)
Maximum DC Output Current
(@ T
C
=100
O
C) (Single,
Doubler)
7.5
A
Max. Average Forward Current
I
F(AV)
Maximum DC Output Current
(@ T
C
=100
O
C) (Common
Cathode, Common Anode)
15
A
Max. Peak One Cycle Non-
Repetitive Surge Current
I
FSM
8.3 ms, half Sine wave
75
A
Maximun Thermal Resistence
(Single)
R
JC
-
2.71
C/W
Maximun Thermal Resistence
(Common Cathode, Common
Anode, Doubler)
R
JC
-
1.36
C/W
Max. Junction Temperature
T
J
-
-65 to +150
C
Max. Storage Temperature
T
stg
-
-65 to +150
C
Electrical Characteristics Per Leg
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
V
F1
@ 7.5 A, Pulse, T
J
= 25
C
0.58
V
V
F2
@ 7.5 A, Pulse, T
J
= 125
C
0.48
V
Max. Reverse Current
I
R1
@V
R
= 30 V, Pulse,
T
J
= 25
C
1
mA
I
R2
@V
R
= 30 V, Pulse,
T
J
= 125
C
50
mA
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
550
pF
SHD126111
SHD126111P
SHD126111N
SHD126111D
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATASHEET 4751, REV. A
Mechanical Dimensions: In Inches / mm
1 2 3
.200
.190
(5.08
4.82)
.045
.035
(1.14
0.89)
.120(3.05) BSC
.430
.410
(10.92
10.41)
.420
.410
(10.67
10.41)
.665
.645
(16.89
16.38)
.537
.527
(13.64
13.39)
1.132
1.032
(28.75
26.21)
.035
.025
(0.89
0.63)
3 Places
.100(2.54) BSC
2 Places
.150
.140
(3.81
3.56)
Dia.
TO-257
DEVICE TYPE
PIN 1
PIN 2
PIN 3
SINGLE RECTIFIER
CATHODE
ANODE
ANODE
COMMON CATHODE (P)
ANODE 1
COMMON CATHODE
ANODE 2
COMMON ANODE (N)
CATHODE 1
COMMON ANODE
CATHODE 2
DOUBLER (D)
ANODE
CATHODE / ANODE
CATHODE
Note: Vf characteristics are for unpackaged die only.
SHD126111
SHD126111P
SHD126111N
SHD126111D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage Drop - V
F
(V)
10
-1
10
0
10
1
Instantaneous Forward Current - I
F
(A)
Typical Forward Characteristics
125 C
150 C
25 C
0
10
20
30
40
Reverse Voltage - V
R
(V)
10
-2
10
-1
10
0
10
1
10
2
Instantaneous Reverse Current - I
R
(mA)
Typical Reverse Characteristics
25 C
50 C
75 C
100 C
125 C
150 C
0
10
20
30
40
Reverse Voltage - V
R
(V)
300
350
400
450
500
Junction Capacitance - C
T
(pF)
Typical Junction Capacitance
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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