221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 682, REV -
Formerly part number SHD2199
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
-100 Volt, 0.2 Ohm, -18A MOSFET
Electrically Isolated Hermetically Sealed
Low R
DS (on)
Equivalent to IRF9140 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T
A
= 25
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
V
GS
-
-
20
Volts
CONTINUOUS DRAIN CURRENT V
GS
=10V, T
C
= 25
C
V
GS
=10V, T
C
= 100
C
I
D
-
-
-18
-11
Amps
PULSED DRAIN CURRENT @ T
C
= 25
C
I
DM
-
-
-72
Amps
OPERATING AND STORAGE TEMPERATURE
T
OP
/T
STG
-55
-
+150
C
TERMAL RESISTANCE JUNCTION TO CASE
R
JC
-
-
0.78
C/W
TOTAL DEVICE DISSIPATION @ T
C
= 25
C
P
D
-
-
160
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0mA
BV
DSS
-100
-
-
Volts
DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= -10V, I
D
= -11A
V
GS
= -10V, I
D
= -18A
R
DS(ON)
-
-
0.20
0.22
W
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250
mA
V
GS(th)
-2.0
-
-4.0
Volts
FORWARD TRANSCONDUCTANCE
V
DS
-15V, I
DS
= -11A
g
fs
6.2
-
-
S(1/
W)
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8x Max. Rating, V
GS
= 0V
V
DS
= 0.8x Max. Rating
V
GS
= 0V, T
J
= 125
C
I
DSS
-
-
-25
-250
mA
GATE TO SOURCE LEAKAGE FORWARD V
GS
= -20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= 20V
I
GSS
-
-
-100
100
nA
TOTAL GATE CHARGE V
GS
= -10V
GATE TO SOURCE CHARGE V
DS
= Max. Ratingx0.5
GATE TO DRAIN CHARGE I
D
= -18A
Q
g
Q
gs
Q
gd
31
3.7
7.0
-
60
13
35.2
nC
TURN ON DELAY TIME V
DD
= -50V,
RISE TIME I
D
=-11A,
TURN OFF DELAY TIME R
G
= 9.1
W
FALL TIME
t
d(on)
t
r
t
d(off)
t
f
-
-
35
85
85
65
nsec
DIODE FORWARD VOLTAGE T
J
= 25
C, I
S
= -18A,
V
GS
= 0V
V
SD
-
-
-4.2
Volts
DIODE REVERSE RECOVERY TIME T
J
= 25
C,
REVERSE RECOVERY CHARGE I
F
= -18A,
di/dt = -100A/
msec,
V
DD
-50V
t
rr
Q
rr
-
-
280
3.6
nsec
mC
INPUT CAPACITANCE V
GS
= 0 V,
OUTPUT CAPACITANCE V
DS
= 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
DRAIN TO CASE CAPACITANCE
C
iss
C
oss
C
rss
C
DC
-
1400
600
200
12
-
pF
SHD219409
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
DATA SHEET 682
REVISION -
MECHANICAL DIMENSIONS: in Inches / mm
PINOUT TABLE
DEVICE TYPE
PIN 1
PIN 2
PIN 3
MOSFET
LCC-3P PACKAGE
DRAIN
SOURCE
GATE
SHD219409
LCC-3P
.145
(3.68)
.450 (11.43)
.140 (3.56)Typ.
.035 (.89) Min.
.050 (1.27)
.375
(9.53)
.037
(.94)
.625
(15.88)
.415
(10.54)
.157 (3.99)
.030 (.76) Min.
1
2
3
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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