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Электронный компонент: SHDCG224802

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221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4203, REV. A
Cool-Mos HERMETIC POWER MOSFET
FEATURES:
600 Volt, 0.07 Ohm, 47A MOSFET
Isolated Hermetic Metal Package
Low R
DS (on)
; Low Effective Capacitance
Ultra Low Gate Charge; very high dv/dt ratings
Ceramic Seals with Glidcop leads (SHDCG224802)
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
V
GS
-
-
20
Volts
ON-STATE DRAIN CURRENT
I
D25
-
-
47
Amps
ON-STATE DRAIN CURRENT T=100
o
C
I
D100
-
-
30
Amps
PULSED DRAIN CURRENT
I
DM
-
-
140
Amps
AVALANCHE ENERGY SINGLE PULSE
I
D
= 10A, V
DD
= 50V
E
AS
-
-
1800
mJ
AVALANCHE CURRENT
I
AR
-
-
20
A
TOTAL DEVICE DISSIPATION
P
D
-
-
300
Watts
REVERSE DIODE dv/dt; I
S
= 47A; V
DS
= 480V
-
-
-
6000
V/
sec
OPERATING AND STORAGE TEMPERATURE
T
J
/T
STG
-55
-
+150
C
THERMAL RESISTANCE, JUNCTION TO CASE
R
JC
-
-
0.5
C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250
A
BV
DSS
600
-
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 30A
T = 150
C
R
DS(ON)
Standard
Version
-
-
0.07
0.18
0.08
-
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 30A
T = 150
C
R
DS(ON)
Glidcop
Version
-
-
0.06
0.16
0.07
-
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= 2.7 mA
V
GS(th)
2.1
3
3.9
Volts
FORWARD TRANSCONDUCTANCE
V
DS
= 15V, I
D
= 30A
g
fs
-
40
-
S(1/
)
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= Max. rating, V
GS
= 0V, T
J
= 25
C
T
J
= 150
C
I
DSS
-
-
0.5
-
25
250
A
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
I
GSS
-
-
100
-100
nA
TURN ON DELAY TIME V
DD
= 380V
RISE TIME I
D
= 47A TURN
OFF DELAY TIME V
GS
=13V
FALL TIME R
G
= 1.8
t
d(ON)
t
r
t
d(OFF)
t
f
-
18
27
111
8
-
-
165
12
nsec
GATE CHARGE V
DD
= 350V, I
D
= 47A, V
GS
= 10V
Q
g
-
252
320
nC
DIODE FORWARD VOLTAGE I
F
= 47A, V
GS
= 0V
Pulse test, t
300
s, duty cycle d
2 %
V
SD
-
1.0
1.2
Volts
REVERSE RECOVERY TIME T
J
= 25
C,
I
F
=47A, V
R
= 350V
di/dt = 100A/
sec
t
rr
-
580
-
nsec
INPUT CAPACITANCE V
GS
= 0 V,
OUTPUT CAPACITANCE V
DS
= 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
C
iss
C
oss
C
rss
-
6800
2200
145
-
pF
SHD224802
SHDCG224802
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - www.sensitron.com
E-Mail Address - sales@sensitron.com




SENSITRON
TECHNICAL DATA
DATA SHEET 4203, REV. A
MECHANICAL DIMENSIONS: in Inches / mm
1
2
3
.270
.240
(6.86
6.10)
.045
.035
(1.14
0.89)
.140(3.56) BSC
.550
.530
(13.97
13.46)
.695
.685
(17.65
17.40)
.835
.815
(21.21
20.70)
.707
.697
(17.96
17.70)
1.302
1.202
(33.07
30.53)
.065
.055
(1.65
1.40)
3 Places
.200(5.08) BSC
2 Places
.165
.155
(4.19
3.94)
Dia.



DEVICE TYPE
PIN-1
PIN-2
PIN-3
N-CHANNEL MOSFET
TO-258 PACKAGE
DRAIN
SOURCE
GATE
SHD224802
SHDCG224802
TO-258
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.