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Электронный компонент: SPM6G080-120D

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221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4099, REV D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE

ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
P
P
A
A
R
R
A
A
M
M
E
E
T
T
E
E
R
R
S
S
Y
Y
M
M
B
B
O
O
L
L
M
M
I
I
N
N
T
T
Y
Y
P
P
M
M
A
A
X
X
U
U
N
N
I
I
T
T
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I
C
= 250
A, V
GE
= 0V
BV
CES
1200
-
-
V
Continuous Collector Current T
C
= 25
O
C
T
C
= 90
O
C
I
C
-
-
80
70
A
Pulsed Collector Current, 1mS
I
CM
-
-
200
A
Gate to Emitter Voltage
V
GE
-
-
+/-20
V
Gate-Emitter Leakage Current , V
GE
= +/-20V
I
GES
-
-
+/- 100
nA
Gate Threshold Voltage, I
C
=2mA
V
GE(TH)
3.0
-
6.0
V
Zero Gate Voltage Collector Current
V
CE
= 1200 V, V
GE
=0V T
i
=25
o
C
V
CE
= 900 V, V
GE
=0V T
i
=125
o
C
I
CES
-
-
1
10
mA
mA
Collector to Emitter Saturation Voltage, T
C
= 25
O
C
I
C
= 60A, V
GE
= 15V,
V
CE(SAT)
-
2.5
2.8
V
Maximum Thermal Resistance
R
JC
-
-
0.3
o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current T
C
= 25
O
C
T
C
= 90
O
C
I
C
-
-
40
25
A
Pulsed Collector Current, 0.5mS
I
CM
-
-
120
A
SPM6G080-120D
221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
2

SENSITRON
TECHNICAL DATA
DATASHEET 4099, REV D
OVER-TEMPERATURE SHUTDOWN
Over-Temperature Shutdown
Tsd
100
110
120
o
C
Over-Temperature Shutdown Hysteresis
20
o
C
Over-Temperature Output
Tco
10
10mV/
o
C
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage
PIV
1200
-
-
V
Continuous Forward Current, T
C
= 90
O
C
I
F
-
-
60
A
Forward Surge Current, t
p
= 10 msec
I
FSM
-
-
250
A
Diode Forward Voltage, I
F
= 70A
V
F
-
2.0
2.3
V
Diode Reverse Recovery Time
(I
F
=60A, V
RR
=600V , di/dt=200 A/
s)
t
rr
-
180
250
nsec
Maximum Thermal Resistance
R
JC
-
-
0.55
o
C/W
GATE DRIVER
Supply Voltage
VCC
10
15
20
V
Input On Current
HIN, LIN
2
5.0
mA
Opto-Isolator Logic High Input Threshold
I
th
-
1.6
-
mA
Input Reverse Breakdown Voltage
BV
in
5.0
-
-
V
Input Forward Voltage @ I
in
= 5mC
V
F
-
1.5
1.7
V
Under Voltage Lockout
VCCUV
11.5
-
12.5
V
ITRIP Reference Voltage
(1)
Itrip-ref
2.9
3.0
3.1
V
Desaturation Over-Current Protection Blanking time
(2)
tbl
3
5
TBD
sec
Logic Inputs Fault, Fault Clr, SD Logic "1" Input Voltage
2.0
-
-
V
Logic Inputs Fault, Fault Clr, SD Logic "0" Input Voltage
-
-
0.8
V
Input-to-Output Turn On Delay
Output Turn On Rise Time
Input-to-Output Turn Off Delay
Output Turn Off Fall Time
At VCC=300V, IC=50A, T
C
= 25
t
ond
t
r
t
offd
t
f
-
-
-
-
800
100
1000
100
nsec
Input-Output Isolation Voltage
-
1000
-
-
V
SPM6G080-120D

221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
3



SENSITRON
TECHNICAL DATA
DATASHEET 4099, REV D
Maximum operating Junction Temperature
T
jmax
-40
-
150
o
C
Maximum Storage Junction Temperature
T
jmax
-55
-
150
o
C
Pin Description
Pin Number
Function
Pin Number
Function
1
Isolated Input for Low-side IGBT of
Phase A
17
+15V Rtn (Signal Ground)
2
Return for Input at 1
18
Fault Output
(3)
3
Isolated Input for High-side IGBT of
Phase A
19
Fault Clear Input
(3)
4
Return for Input at 3
20
+5V Output
5
Isolated Input for Low -side IGBT of
Phase B
21
Over-Current Trip Set point
(3)
6
Return for Input at 5
22
DC Bus Current Output with Total Gain of
0.0365 V/A
7
Isolated Input for High-side IGBT of
Phase B
23
Case Temperature Output with a gain of
0.010 V/
o
C
8
Return for Input at 7
24
Brake IGBT Gate Input
9
Isolated Input for Low-side IGBT of
Phase C
25
Brake IGBT Emitter Input. This input is
internally connected to Signal Ground
10
Return for Input at 9
26 to 30
DC Bus return
11
Isolated Input for High-side IGBT of
Phase C
31 , 32
Brake Resistor Terminal. Brake Resistor
Shall be Connected Between These
Terminals and +VDC
12
Return for Input at 11
33 to 37
DC Bus "+VDC" input
13
NC
38 to 42
Phase C output
14
NC
43 to 47
Phase B output
15
SD
(3)
48 to 52
Phase A output
16
+15V Input
Case
Isolated
(1)
ITRIP Cycle-by cycle current limit is internally set to 70A peak. The set point can be lowered by connecting a resistor
between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref
(2)
Desaturation blanking maximum time is TBD and is only provided at the low-side IGBTs.
(3)
See application notes on page 6.

SPM6G080-120D

221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
4



SENSITRON
TECHNICAL DATA
DATASHEET 4099, REV D
Package Drawing:

SPM6G080-120D
221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
5


SENSITRON
TECHNICAL DATA
DATASHEET 4099, REV D
Application Notes:
a- Shutdown Feature:
1- SD is a dual function input/output, active low input. It is internally pulled high. As a low input
shuts down all IGBTs regardless of the Hin and Lin signals.
2- SD is also internally activated by the over-temperature shutdown, over-current limit, under-
voltage shutdown, and desaturation protection.
3- Over-temperature shutdown and over-current limit are not latching features.
4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above the
threshold limit.
5- Desaturation shutdown is a latching feature and internally reset after 300 msec.
6- When any of the internal protection features is activated, SD is pulled down.
7- SD can be used to shutdown all IGBTs except the brake IGBT by an external command. An
open collector switch shall be used to pull down SD externally.
8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation.
b- Fault Output Feature:

1-
Pin 18 Flt is a dual function pin. It is internally pulled high. If pulled down, it will freeze the status
of all the six IGBTs regardless of the Hin and Lin signals
2- Pin 18 as an output reports desaturation protection activation. When desaturation protection is
activated a low output for about 9
sec is reported.
3- If any other protection feature is activated, it will not be reported by Pin 18.
c- Fault Clear Output:

1- Pin 19 is a fault clear input. It can be used to reset a latching fault condition, due to desaturation
protection.
2- Pin 19 is internally pulled down. A latching fault due to desaturation can be cleared by pulling
high this input.
3- An internal fault clear is activated after 300 msec delay. If desired to clear the fault earlier, this
input can be used.

SPM6G080-120D
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA

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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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