CE
1N914 THRU 1N4454
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 1N4149, 1N4447, 1N4449 are also
avaible in glass case DO-34
MECHANICAL DATA
.
Case: DO-35 glass case
.
Polarity: Color brand denotes cathode end
.
Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak
Max.
Max.
Max.
reverse Aver. Power Junction
voltage Rectified Dissip tempera-
V
RM
(V) Current At 25 ture
I(AV)Ma
P
tot
(mW
)
TJ V
F
at I
F
I
R
at trr(ns)
(V)
(mA) (nA) V
R
(V) Max.
1N914
100
75
500
200
1.0
10
25
20
4.0
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4149
1)
100 150 500 200 1.0 10 25 20 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4150
50
200
500
200
1.0
200
100
50
4.0
I
F
=I
R
=10 to 200mA, to 0.1 I
F
1N4152
40
150
400
175
0.55
0.10
50
30
2.0
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4153
75
150
400
175
0.55
0.10
50
50
2.0
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4154
35
150
2)
500
200
1.0
0.10
100
25
2.0
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4447
1)
100
150
500
200
1.0
20
25
20
4.0
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4449
1)
100
150
500
200
1.0
30
25
20
4.0
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4450
40
150
400
175
0.54
0.50
50
30
4.0
I
F
=I
R
=10mA to, I
R
=1mA
1N4451
40
150
400
175
0.50
0.10
50
30
10
I
F
=I
R
=10mA to, I
R
=1mA
1N4453
30
150
400
175
0.55
0.01
50
20
1N4454
75 150 400 175 1.0 10 100 50 4.0 I
F
=I
R
=10mA to, I
R
=1mA
Notes:
1.These diodes are also available in glass case DO-34
2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes
in case DO-34: P
to
t=300mW T
STG
=-65 to +175 T
J
=175 R
JA
=400K/W
Type
Max.
Forward
Voltage
drop
Test conditions
Max.
Reverse
Current
Max. Reverse Recovery Time
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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