58
GH5R385C3C
Hologram Lasers
Notice
In the absence of confirmation by device specification sheets,SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs,data books,etc.Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet
Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
Hologram device
Cap glass
Laser chip
Reference plane
1.27
0.25
4.8
+
0 0.1
P1.1
0.15
4=4.4
0.15
8.2
+
0
0.025
8.2
+
0
0.025
6.63
0.1
3.2
0.15
4.9
0.2
4.77
0.12
4.6
0.5
2.8
0.2
2.0
0.1
1.2
0.1
12-0.3
0.05
7.5
MAX.
0.3
MAX.
3.97
0.1
4.8
+
0
0.1
2.8
0.15
Z
X
Y
Z
X
Y
Y
Z
X
Dimension measured at
lead base
Tolerance
0.2mm
D3
Vcc
LD
GND
V
E+G
V
D
V
C
V
B
V
A
Vref
D4
D1
D2
D5
D6
D7
D8
V
F+H
TAO
Swin
o
r
w
t
u
e
!0
q
!11
i
y
!2
TAO output is to adjust electric off-set
of output signal caused by temperature
in hologram laser.
GH5R385C3C
s
Outline Dimensions
Compact Hologram Laser for
8
Speed CD-R Drive
!1
!2
y
!0 o i u
t
r
e
w
q
Z
X
Y
Top View
Terminal connection
Pin configuration
(Unit : mm)
s
Features
(1) High power output (Max. 76mW CW)
(2) For
8 speed CD-R,
24 to
32 speed CD-ROM
With built-in MIN. 30MHz OPIC
(3)
4.8mm thickness package
(4) With built-in beam splitter and diffraction grating
OPIC : (Optical IC) is a trademark of the SHARP
Corporation. An OPIC consists of a light-
detecting element and signal-processing circuit
integrated onto a single chip.
s
Applications
(1) CD-R drives
(2) CD-RW drives
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Symbol
Rating
Unit
1
Optical power output (CW)
P
H
76
mW
2
Optical power output (pulse)
P
H
108
mW
3
Operating temperature
T
opr
0 to +60
C
3
Storage temperature
T
stg
-40 to +85
C
4
Soldering temperature
T
sold
260
C
1
Output power from hologram laser Equivalent to 85mW (CW) from cap glass
2
Output power from hologram laser Equivalent to 120mW (pulse) from cap glass
3
Case temperature
4
At the position of 1.6mm or more from the lead base (Within 5s)
Laser
2
OPIC supply voltage
V
CC
8
V
V
Reverse voltage
V
R
59
GH5R385C3C
Hologram Lasers
s
Electro-optical Characteristics
(T
C
=25C)
Parameter
Symbol
MAX.
Unit
1
Focal offset
DEF
+0.7
m
6
RES output amplitude
V
RES
0.29
V
Jitter
-
23
ns
Conditions
MIN.
TYP.
Collimated lens output power
1.5mW, High gain
-0.7
-
0.09
0.18
Collimated lens output power
1.5mW, High gain
-
-
2
Focal error symmetry
B
FES
Collimated lens output power
1.5mW, High gain
-25
-
+25
%
3
Radial error balance
B
RES
-25
-
+25
%
5
FES output amplitude
V
FES
0.34
0.57
0.90
V
Collimated lens output power
1.5mW, High gain
4
RF output amplitude
V
RFH
Collimated lens output power
1.5mW, High gain
0.61
0.90
1.06
V
Collimated lens output power
1.5mW, High gain
Collimated lens output power
1.5mW, High gain
7
Main spot balance
MSB
Collimated lens output power
1.5mW, High gain
0.8
1.0
1.2
-
8
Sub spot balance
SSB
Collimated lens output power
1.5mW, High gain
0.8
1.0
1.2
-
1
Distance between FES=0 and jitter minimum point
2
(ab) / (a+b)
3
4
Amplitude of V
A
+V
B
+V
C
+V
D
(focal servo ON, radial servo ON)
5
V
A
V
B
(Focal vibration)
6
Amplitude of (V
C
V
D
)k1(V
E
+
G
V
F
+
H
). When tracking servo is
ON, (V
C
V
D
)k1(V
E
+
G
V
F
+
H
)+
should be 0.
7
(V
A
+V
B
) / (V
C
+V
D
)
8
V
C
/V
D
ab
2(a+b)
a (+amplitude of RES)
b (amplitude of RES)
GND
a (+amplitude of FES)
b (amplitude of FES)
60
GH5R385C3C
Hologram Lasers
s
Electro-optical Characteristics of Laser Diode
(T
C
=25C)
Parameter
Symbol
MAX.
Unit
Threshold current
I
th
40
mA
155
Half intensity angle
+3
K-LI1
-
-
Kink
K-LI2
15
%
Conditions
MIN.
TYP.
-
30
Operating current
-
127
mA
-3
-
0.988
-
P1=24mW, P2=72mW, P3=120mW
-
-
I
op
//
-1
-
+1
-
Po=85mW
Parameter
Symbol
Unit
10
Segment
Supply voltage
V
CC
V
Off-set voltage difference, Gain switching
V
od
mV
A, B
Conditions
MIN.
TYP.
4.5
5
-30
-
9
0.1F capacitor should be added between OPIC power supply terminal and GND, Vref terminal and GND.
10
Applicable divisions correspond to output terminals
A : V
A
, V
B
, V
C
, V
D
B : V
E
+
G
, V
F
+
H
11
Difference from V
ref
MAX.
5.5
Reference voltage
V
ref
2.00
2.1
2.21
V
Supply current
I
CC1
High gain, Gain switching SW=H
-
20
25
mA
-
30
35
mA
Common to high/low gain
+30
1.8
2.2
2.6
V
T
ao
I
CC2
Po=85mW
Operating voltage
V
op
Po=85mW
-
2.1
2.65
V
Wavelength
p
Po=85mW
773
785
797
nm
Differential efficiency
d
75mW
I(85mW)-I(10mW)
0.55
0.9
1.2
mW/mA
//
8
9
12
17.1
21
25.5
//
-2
-
+2
Beam shift
//
(85mW)-
//
(3mW)
Po=10 to 120mW
s
Electro-optical Characteristics of OPIC for Signal Detection : 100% inspection in wafer test process
9
(T
C
=25C, V
CC
=5V, V
ref
=2.1V)
Low gain, Gain switching SW=L
Output terminal current
I
O
Common to high/low gain
-0.03
0.01
+0.3
mA
A, B
Reference voltage terminal current
I
ref
Common to high/low gain, No light
-0.5
1
+2
mA
11
Output off-set voltage
V
od
Common to high/low gain, No light
-25
2
+25
mV
A, B
Output terminal voltage of temperature sensor
Common to high/low gain
Parallel
Perpendicular
Emission
characteristics
Deviation
angle
Parallel
Perpendicular
115
Application Circuits
NOTICE
qThe circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
qContact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
qObserve the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
qContact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
qIf the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
qThis publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
qContact and consult with a SHARP representative if there are any questions about the contents of this
publication.
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