GL4910
(Ta=25C)
0.5
0.8
0.8
(2.5
)
0.8
0.8
2.15
2
-
0.28
2
-
0.77
2.54
8
8
8
8
1.5
8
8
8
8
2
1
1
2
50
mA
1
4
V
C
C
260
C
I
F
I
FM
V
R
T
opr
T
stg
T
sol
A
4.0
0.2
0.4
MAX.
5.0
0.2
R1.75
0.1
0.3
MIN.
2
-
0.45
+
0.2
-
0.1
17.15
+
1.5
-
1.0
3.75
0.2
2
-
0.4
+
0.2
-
0.1
2.0
0.2
Features
1. Small spot light diameter for easy beam diaphragming
2. Uniform emission intensity on chip emitting surface
3. Low peak forward voltage type
Applications
1. Cameras
Outline Dimensions
(Unit : mm)
Gate burr
Solder dipping
range
Chip center
(Chip position
: 2.65)
1 Cathode
2 Anode
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Forward current
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature
*1
*2
- 25 to + 60
- 40 to + 85
*1 30,00 cycles max. on pulse conditions shown in the right drawing
*2 For 5 seconds at the position of 2.15 mm from the resin edge
Soldering area
2.15mm
GL4910
Side View Type Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
Pink
transparent
epoxy resin
*
( ) : Reference dimensions
*
Tolerance :
0.15 mm
* Expansion range on lens surface of infrared emitted from chips
(*Apparent emission diameter : TYP.
0.32 mm)
(Peak forward voltage V
FM
: TYP. 1.7V)
120
s
500
s
I
FM
32ms (64 pulses)
1s (1 cycle)
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
s
s
s
s
(Ta=25 C)
V
F
V
FM
I
R
e
p
C
t
I
F
= 50mA
I
FM
= 300mA, t = 10ms
V
R
I
FM
= 300mA, t = 10ms
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 0, f = 1MH
Z
-
1.55
1.7
V
-
1.7
1.95
V
-
-
A
4.2
9
-
mW
-
-
nm
-
35
-
nm
-
32
-
-
80
-
100
- 25
0
25
50
75
100
125
0
10
20
30
40
50
60
60
1
10
100
850
= 1V
pF
1000
1
10
- 4
10
- 3
10
- 2
10
- 1
T
a
= 25C
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Forward voltage
Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Half intensity angle
Terminal capacitance
*3
*3 Emission output to effective angle 25
Fig. 1 Forward Current vs. Ambient Temperature
Fig. 2 Peak Forward Current vs. Duty Ratio
Forward current I
F
(
mA
)
Peak forward current I
FM
(
mA
)
Ambient temperature T
a
(C)
Duty ratio
Pulse width<= 100
s
GL4910
Electro-optical Characteristics
s
Fig. 3 Spectral Distribution
Fig. 5 Forward Current vs. Forward Voltage
Fig. 6 Relative Radiant Flux vs. Ambient
Temperature
Relative radiant intensity (%)
Wavelength
(nm)
Peak emission wavelength
p (nm)
Ambient temperature T
a
(C)
Forward voltage V
F
(V)
Ambient temperature T
a
(C)
Fig. 7 Radiant Flux vs. Forward Current
Fig. 8 Relative Radiant Intensity vs. Distance
Radiant flux
e (mW)
Forward current I
F
(mA)
Relative radiant intensity (%)
Distance to detector (mm)
GL4910
Relative radiant flux
Forward current I
F
(
mA
)
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
1
10
100
1
10
100
0.1
0.1
Ta=25C
1
10
100
1000
0.1
0.01
1
10
100
Ta=25C
Pulse
(pulse width
<= 100
s)
- 25
85
0
25
50
75
1
0.1
10
I
F
=const
25C
0C
-25C
60C
50C
0
0.5
1
1.5
2
2.5
1
10
100
1000
- 25
0
25
50
75
85
800
825
850
875
900
I =const
720 740 760 780 800 820 840 860 880 900 920 940 960
0
20
40
60
80
100
I =50mA
Ta=25C
F
F
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