ChipFind - документация

Электронный компонент: GP1S37

Скачать:  PDF   ZIP
s
Outline Dimensions
(Unit : mm )
s
Absolute Maximum Ratings
(Ta = 25C )
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
Reverse voltage
V
R
6
V
Power dissipation
P
75
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
75
mW
Total power dissipation
P
tot
100
mW
Operating temperature
T
opr
- 25 to + 85
C
Storage temperature
T
stg
- 40 to + 100
C
T
sol
260
C
*1
Soldering temperature
s
Features
s
Applications
1. Ultra-compact
2. PWB mounting type package
1. Cameras
*1 For 5 seconds
GP1S37
Subminiature Photointerrupter
GP1S37
2. Auto-focus cameras
1mm or more
Slit width
Internal connection diagram
4.8
1.4 2.0
4.0
(C0.8)
Center of light path
(C0.3)
4
-
0.15
g
3.64
Rest of gate
(2)
5.0
4.0
( 1.0
)
2.5
2
1
3
4
1
2
3
4
1 Anode
2 Cathode
3 Emitter
4 Collector
4
-
0.4
( Light path
)
g
2.54
(Detectorside)
Soldering area
(0.8)
*
Tolerance
:
0.2mm
*
Burr's dimensions
:
0.15MAX.
*
Rest of gate
:
0.3MAX.
*
( )
:
Reference dimensions
*
The dimensions indicated by
g
refer
to those measured from the lead base.
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
4.0
0.3
4.0
MIN.
(Ta = 25C )
s
Electro-optical Characteristics
GP1S37
Parameter
Input
Forward voltage
Reverse current
Output
Collector dark current
Transfer
charac-
teristics
Collector-emitter
saturation voltage
Response time
Rise time
Fall time
- 25
0
25
50
75
100
0
10
20
30
40
50
60
- 25
0
25
50
75
100
0
20
40
60
Power dissipation P
(
mW
)
80
0
0.5
1.0
1.5
2.0
1
2
10
20
100
200
2.5
3.0
5
50
500
25C
0C
- 25C
50C
85
100
120
0
2
0
0.2
1.0
0.4
0.6
0.8
10
4
6
8
85
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
Fig. 2 Power Dissipation vs. Ambient
Temperature
P
tot
P,P
C
Ambient temperature T
a
(C)
Fig. 1 Forward Current vs. Ambient
Temperature
Fig. 3 Forward Current vs.
Forward Voltage
Fig. 4 Collector Current vs.
Forward Current
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
Collector current I
C
(
mA
)
Forward current I
F
( mA )
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
F
I
F
= 20mA
-
1.2
1.4
V
I
R
V
R
= 3V
-
-
10
A
I
CEO
V
CE
= 20V
-
-
- 7
A
V
CE( sat )
t
r
t
f
V
CE
= 5V, I
F
= 3mA
-
I
F
= 6mA, I
C
= 15
A
R
L
= 1k
-
0.08
0.4
V
-
50
150
s
V
CE
= 5V, I
C
= 100
A
-
50
150
s
V
CE
= 5V
T
a
= 25C
30
300
1 x 10
T
a
= 75C
A
Collector Current
Ic
10
9
8
7
6
5
4
3
2
1
0
0
100
75
50
25
0
0.30
0.25
0.20
0.15
0.10
0.05
0
100
75
50
25
0
0
Collector-emitter saturation voltage
100
75
50
25
0
Response time
(
s
)
0.01
1
2
3
4
5
0.02
0.04
0.06
0.08
0.10
0.12
10
%
Test Circuit for Response Time
Output
Input
90
%
Input
Output
3mA
10mA
20mA
30mA
40mA
0.02
0.05 0.1 0.2
0.5
1
2
5
10
1
2
5
10
20
50
100
200
500
1000
Fig. 5 Collector Current vs. Collector-
emitter Voltage
T
a
= 25C
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
Fig. 6 Collector Current vs.
Ambient Temperature
I
F
= 3mA
V
CE
= 5V
Collector current I
C
(
mA
)
Ambient temperature T
a
(C)
vs. Ambient Temperature
Fig. 8 Collector Dark Current vs. Ambient
Temperature
Fig. 7 Collector-emitter Saturation Voltage
V
CE
= 20V
Ambient temperature T
a
(C)
V
CE
CE
( sat
)
(
V
)
Collector dark current I
CEO
(
A
)
Ambient temperature T
a
(C)
R
D
V
CC
R
L
t
d
t
r
t
s
t
f
t
f
t
r
t
f
t
r
t
d
L
( k
)
GP1S37
I
F
= 6mA
= 15
A
V
CE
= 5V
T
a
= 25C
I
F
= 50mA
t
s
I
C
- 25
- 25
10
- 10
10
- 9
10
- 8
10
- 7
10
- 6
I
C
= 100
A
Fig. 9 Response Time vs. Load Resistance
Load resistance R
0
1
0
Relative collector current
(
%
)
Shield distance L ( mm )
- 2
2
100
(Detector center )
Detector
Shield
L
0
+
-
+
-
0
L
Shield
Detector
(Detector center
)
Shield distance L ( mm )
Relative collector current
(
%
)
- 1
50
3
50
- 1
100
- 2
0
0
3
2
1
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
I
F
= 3mA, V
CE
= 5V
T
a
= 25C
GP1S37
I
F
= 3mA, V
CE
= 5V
T
a
= 25C
q
Please refer to the chapter " Precautions for Use ".