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Электронный компонент: GP1S58V

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GP1S53V/GP1S58V
s
Outline Dimensions
(Unit : mm )
s
Features
s
Absolute Maximum Ratings
(Ta = 25C )
s
Applications
*1 Pulse width <=100
s, Duty ratio= 0.01
*2 For 5 seconds
GP1S53V/GP1S58V
1. Compact type
3. PWB direct mounting type
4. With positioning pin (
GP1S58V
)
1. OA equipment, such as FDDs, printers,
facsimiles
2. VCRs
3. Optoelectronic switches
diagram
Internal connection
6.5
2.5
2.0
3
4
2
1
1
2
3
4
1 Anode
2 Cathode
3 Collector
4 Emitter
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
*1
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Power dissipation
P
75
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
75
mW
Operating temperature
T
opr
- 25 to + 85
C
Storage temperature
T
stg
- 40 to + 100
C
*2
Soldering temperature
T
sol
260
C
Compact Photointerrupter
2. High sensing accuracy ( Slit width : 0.5mm )
5.2
13.7
+
0.3
-
0.3
S58
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
*
Unspecified tolerances
(10.3)
Internal connection
diagram
1
2
4
3
1
2
4
3
1 Anode
2 Cathode
3 Collector
4 Emitter
shall be as follows
;
Dimensions(d) Tolerance
d
<=
6.0
0.1
6.0
<
d
<=
18.0
0.2
S53
5.2
13.7
+
0.3
-
0.3
GP1S53V
B
A
A
'
B
'
( 2.5
)
( Sensor center
)
10
7.5
0.5
1.5
B-B
'
section
0.5
C1
3.5
MIN 10
(2.54)
A-A
'
section
*
( )
:
Reference dimensions
(10.3)
B
A
A
'
B
'
( 2.5
)
( Sensor center
)
10
7.5
0.5
1.5
B-B
'
section
0.5
C1
3.5
MIN 10
(2.54)
A-A
'
section
GP1S58V
*
Unspecified tolerances
Dimensions(d) Tolerance
d
<=
6.0
0.1
6.0
<
d
<=
18.0
0.2
shall be as follows
;
*
( )
:
Reference dimensions
2-0.7
2
-
0.7
5.0
+
0.2
-
0.1
0.4
+
0.3
-
0.1
0.45
+
0.3
-
0.1
5.0
+
0.2
-
0.1
0.45
+
0.3
-
0.1
0.4
+
0.3
-
0.1
(Ta = 25C )
s
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 20mA
-
1.25
1.4
V
Peak forward voltage
V
FM
I
FM
= 0.5A
-
3
4
V
Reverse current
I
R
V
R
= 3V
-
-
10
A
Output
Collector dark current
I
CEO
V
CE
= 20V
-
Transfer
charac-
teristics
I
F
= 20mA, V
CE
= 5V
0.5
mA
Collector-emitter saturation voltage
V
CE( sat )
I
F
= 40mA, I
C
= 0.2mA
-
-
0.4
V
Response time
Rise time
t
r
R
L
= 100
-
3
15
s
Fall time
t
f
-
4
20
s
GP1S53V/GP1S58V
- 25
0
25
50
75
100
0
10
20
30
40
50
60
85
- 25
0
25
50
75
100
0
20
40
60
85
80
100
120
75
0
0.5
1
1.5
2
1
2
10
20
100
200
2.5
3
5
50
500
25C
0C
- 25C
50C
20
5
5
2
5
2
50
100
200
500
3.5
Duty ratio
Fig. 1 Forward Current vs. Ambient
Temperature
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
Fig. 3 Peak Forward Current vs.
Duty Ratio
Fig. 4 Forward Current vs.
Forward Voltage
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
Collector power dissipation P
C
(
mW
)
Ambient temperature T
a
(C)
Peak forward current I
FM
(
mA
)
T
a
= 75C
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
T
a
= 25C
V
CE
= 2V, I
C
= 2mA
Pulse width <= 100
s
10
0
10
- 2
10
- 1
-
1.5
1
100
nA
2000
1000
Collector Current
Ic
Response time
(
s
)
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
0.1
0.2
0.5
1
2
5
10
20
50
100
10
%
Test Circuit for Response Time
Output
Input
90
%
Input
Output
3.0
0
25
50
75
100
2.5
2.0
1.5
1.0
0.5
0
0
0.05
0.1
0.15
0.2
0.25
100
75
50
25
0
Collector-emitter saturation voltage
0.3
0
50
40
30
20
10
0
1
2
3
4
5
40mA
30mA
20mA
10mA
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
Fig. 5 Collector Current vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
Fig. 7 Collector Current vs.
Ambient Temperature
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
Fig. 9 Response Time vs.
V
CE
= 5V
T
a
= 25C
Collector current I
C
(
mA
)
Forward current I
F
( mA )
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
F
= 50mA
I
F
= 20mA
V
CE
= 5V
Collector current I
C
(
mA
)
Ambient temperature T
a
(C)
I
F
= 40mA
I
C
= 0.2mA
Ambient temperature T
a
(C)
V
CE
( sat
)
(
V
)
V
CE
= 2V
I
C
= 2mA
T
a
= 25C
t
f
t
r
t
d
t
s
L
( k
)
R
D
V
CC
R
L
t
d
t
r
t
s
t
f
GP1S53V/GP1S58V
- 25
- 25
Load Resistance
Load resistance R
5
- 20
Frequency f ( Hz )
2
2
5
2
5
2
5
- 15
- 10
- 5
0
1k
100
- 25
25
50
75
100
2
5
2
5
2
5
- 1.5
0
0.5
0
Relative collector current
(
%
)
Shield distance L ( mm )
- 1 - 0.5
2.5
50
100
(Detector center )
Detector
Shield
L
0
+
-
-
+
0
L
Shield
Detector
(Detector center
)
Shield distance L ( mm )
Relative collector current
(
%
)
2
1.5
1
100
50
- 1
- 2
0
1
0
2
0
- 2.0
- 2.5
R
L
= 10k
Fig.11 Collector Dark Current vs.
Ambient Temperature
V
CE
= 2V
I
C
= 2mA
T
a
= 25C
Collector dark current I
CEO
(
A
)
Ambient temperature T
a
(C)
Fig.12 Relative Collector Current vs.
Shield Distance ( 1 )
Fig.13 Relative Collector Current vs.
Shield Distance ( 2 )
V
CE
= 20V
2
5
I
F
= 20mA, V
CE
= 5V
T
a
= 25C
Fig.10 Frequency Response
s
Precautions for Use
GP1S53V/GP1S58V
Voltage gain Av
(
dB
)
10
- 6
10
- 7
10
- 8
10
- 9
10
- 10
10
3
10
4
10
5
10
6
( 1) In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, methyl alcohol, Isopropyl alcohol
I
F
= 20mA, V
CE
= 5V
T
a
= 25C
( 2) As for other general cautions, refer to the chapter " Precautions for Use" .