LH5324000
CMOS 24M (3M
8) MROM
FEATURES
3,145,728
8 bit organization
Access time: 150 ns (MAX.)
Supply current:
Operating: 65 mA (MAX.)
Standby: 100
A (MAX.)
TTL compatible I/O
Three-state output
Single +5 V Power supply
Static operation
When the address input at both A
19
and
A
20
is high level, outputs become high
impedance irrespective of CE or OE.
Package:
42-pin, 600-mil DIP
Others:
Non programmable
Not designed or rated as radiation
hardened
CMOS process (P type silicon
substrate)
DESCRIPTION
The LH5324000 is a 24M-bit CMOS mask-program-
mable ROM organized as 3,145,728
8 bits. It is
fabricated using silicon-gate CMOS process technol-
ogy.
PIN CONNECTIONS
532400-1
TOP VIEW
2
3
4
5
8
9
A
2
A
5
39
38
37
36
35
34
31
28
A
7
A
6
6
7
A
3
A
4
33
32
A
10
A
11
A
13
A
15
GND
NC
10
11
12
41
40
A
9
A
1
13
30
A
-1
29
D
7
OE
A
0
CE
A
12
42-PIN DIP
14
15
16
17
18
19
20
21
25
22
27
26
24
23
NC
D
5
NC
D
4
D
2
NC
NC
GND
NC
D
1
D
0
D
3
NC
V
CC
A
8
A
14
A
16
D
6
42
1
A
17
A
18
A
19
A
20
Figure 1. Pin Connections
1
TRUTH TABLE
CE
OE
A
-1
- A
18
A
19
A
20
DATA
OUTPUT
SUPPLY
CURRENT
D
0
- D
7
H
X
X
X
X
High-Z
Standby (I
SB
)
L
H
X
X
X
High-Z
Operating (I
CC
)
L
L
X
L
L
Output
Operating (I
CC
)
L
L
X
L
H
Output
Operating (I
CC
)
L
L
X
H
L
Output
Operating (I
CC
)
L
L
X
H
H
High-Z
Operating (I
CC
)
NOTES:
1.
X = Don't care; High-Z = High-impedance
2.
When the address inputs become HIGH to both A
19
and A
20
, the data does not exist in this address area,
the data outputs become "High Impedance".
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Supply voltage
V
CC
-0.3 to +7.0
V
Input voltage
V
IN
-0.3 to V
CC
+ 0.3
V
Output voltage
V
OUT
-0.3 to V
CC
+ 0.3
V
Operating temperature
T
OPR
0 to +70
C
Storage temperature
T
STG
-65 to +150
C
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
4.5
5.0
5.5
V
DC ELECTRICAL CHARACTERISTICS (V
CC
= 5 V
10%, T
A
= 0 to +70
C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Input `High' voltage
V
IH
2.2
V
CC
+ 0.3
V
Input `Low' voltage
V
IL
-0.3
0.8
V
Output `High' voltage
V
OH
I
OH
= -400
A
2.4
V
Output `Low' voltage
V
OL
I
OL
= 2.0 mA
0.4
V
Input leakage current
| I
LI
|
V
IN
= 0 V to V
CC
10
A
Output leakage current
| I
LO
|
V
OUT
= 0 V to V
CC
10
A
1
Operating current
I
CC1
t
RC
= 150 ns
65
mA
2
I
CC2
t
RC
= 1
s
55
Standby current
I
SB1
CE = V
IH
2
mA
I
SB2
CE = V
CC
- 0.2 V
100
A
Input capacitance
C
IN
f = 1 MHz, t
A
= 25
C
10
pF
Output capacitance
C
OUT
10
pF
NOTES:
1.
CE = V
IH
, OE = V
IH
2.
V
IN
= V
IH
or V
IL
, CE = V
IL
, output is open
CMOS 24M (3M x 8) MROM
LH5324000
3
AC ELECTRICAL CHARACTERISTICS (V
CC
= +5 V
10%, T
A
= 0 to +70
C)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Read cycle time
t
RC
150
ns
Address access time
t
AA
150
ns
Chip enable access time
t
ACE
150
ns
Output enable delay time
t
OE
70
ns
Output hold time
t
OH
5
ns
Output floating time
t
CHZ
60
ns
1
t
OHZ
60
ns
t
AHZ
70
ns
NOTE:
1.
Determined by the time for the output to be opened. (Irrespective of output voltage)
AC TEST CONDITIONS
PARAMETER
RATING
Input voltage amplitude
0.6 V to 2.4 V
Input signal rise time
10 ns
Input signal fall time
10 ns
Input reference level
1.5 V
Output reference level
0.8 V, 2.2 V
Output load condition
1TTL + 100 pF
NOTE:
It is recommended that a decoupling capacitor be connected between V
CC
and GND-Pin.
LH5324000
CMOS 24M (3M x 8) MROM
4
532400-3
t
OE
t
AA
D
0
- D
7
t
OHZ
t
CHZ
t
RC
t
ACE
CE
t
OH
DATA VALID
(NOTE)
OE
A
-1
- A
20
(NOTE)
(NOTE)
NOTE: The output data becomes valid when the last
intervals, t
AA
, t
ACE
, or t
OE
, have concluded.
HI-Z = High Impedance.
HI-Z
HI-Z
Figure 3. Byte Mode
532400-4
D
0
- D
15
t
OHZ
t
CHZ
CE
DATA VALID
OE
A
-1
- A
18
A
19
, A
20
t
AHZ
HI-Z
HI-Z
HI-Z = High impedance.
NOTE: The output data becomes valid when the last
intervals, t
AA
, t
ACE
, or t
OE
, have concluded.
Figure 4. Word Mode
CMOS 24M (3M x 8) MROM
LH5324000
5
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