P
RELIMINARY
P
RODUCT
S
PECIFICATION
Integrated Circuits Group
LHF00L29
Flash Memory
16M (1Mb x 16)
(Model Number: LHF00L29)
Spec. Issue Date: May 26, 2004
Spec No: FM04503
LHF00L29
Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
full or in part, of this material is prohibited without the express written permission of the company.
When using the products covered herein, please observe the conditions written herein and the precautions outlined in
the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly
adhere to these conditions and precautions.
(1) The products covered herein are designed and manufactured for the following application areas. When using the
products covered herein for the equipment listed in Paragraph (2), even for the following application areas, be sure
to observe the precautions given in Paragraph (2). Never use the products for the equipment listed in Paragraph
(3).
Office electronics
Instrumentation and measuring equipment
Machine tools
Audiovisual equipment
Home appliance
Communication equipment other than for trunk lines
(2) Those contemplating using the products covered herein for the following equipment which demands high
reliability, should first contact a sales representative of the company and then accept responsibility for
incorporating into the design fail-safe operation, redundancy, and other appropriate measures for ensuring
reliability and safety of the equipment and the overall system.
Control and safety devices for airplanes, trains, automobiles, and other transportation equipment
Mainframe computers
Traffic control systems
Gas leak detectors and automatic cutoff devices
Rescue and security equipment
Other safety devices and safety equipment, etc.
(3) Do not use the products covered herein for the following equipment which demands extremely high performance
in terms of functionality, reliability, or accuracy.
Aerospace equipment
Communications equipment for trunk lines
Control equipment for the nuclear power industry
Medical equipment related to life support, etc.
(4) Please direct all queries and comments regarding the interpretation of the above three Paragraphs to a sales
representative of the company.
Please direct all queries regarding the products covered herein to a sales representative of the company.
Rev. 2.45
LHF00L29 1
Rev. 2.45
CONTENTS
PAGE
48-Lead TSOP (Normal Bend) Pinout ....................... 3
Pin Descriptions.......................................................... 4
Memory Map .............................................................. 5
Identifier Codes and OTP Address
for Read Operation ............................................. 6
OTP Block Address Map for OTP Program............... 7
Bus Operation............................................................. 8
Command Definitions ................................................ 9
Functions of Block Lock and Block Lock-Down...... 11
Block Locking State Transitions
upon Command Write........................................ 11
Block Locking State Transitions
upon WP#/ACC Transition .............................. 12
Status Register Definition......................................... 13
PAGE
1 Electrical Specifications ........................................ 14
1.1 Absolute Maximum Ratings........................... 14
1.2 Operating Conditions ..................................... 14
1.2.1 Capacitance.............................................. 15
1.2.2 AC Input/Output Test Conditions............ 15
1.2.3 DC Characteristics................................... 16
1.2.4 AC Characteristics
- Read-Only Operations............................ 18
1.2.5 AC Characteristics
- Write Operations .................................... 20
1.2.6 Reset Operations...................................... 22
1.2.7 Block Erase, Full Chip Erase,
Program and OTP Program Performance. 23
2 Related Document Information ............................. 24
LHF00L29 2
LHF00L29
16Mbit (1Mbit
16)
Flash MEMORY
16-M density with 16-bit I/O Interface
Read Operation
70ns
Low Power Operation
2.7V Read and Write Operations
Automatic Power Savings Mode reduces I
CCR
in Static Mode
Enhanced Code + Data Storage
5
s Typical Erase/Program Suspends
OTP (One Time Program) Block
4-Word Factory-Programmed Area
4-Word User-Programmable Area
Operating Temperature -40
C to +85C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
Eight 4-Kword Parameter Blocks
One 32-Kword Block
Fifteen 64-Kword Blocks
Bottom Parameter Location
Enhanced Data Protection Features
Individual Block Lock and Block Lock-Down with
Zero-Latency
All blocks are locked at power-up or device reset.
Block Erase, Full Chip Erase, Word Program Lockout
during Power Transitions
Automated Erase/Program Algorithms
3.0V Low-Power
10s/Word (Typ.)
Programming
12.0V No Glue Logic 9
s/Word (Typ.)
Production Programming and 0.8s Erase (Typ.)
Cross-Compatible Command Support
Basic Command Set
Common Flash Interface (CFI)
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
48-Lead TSOP (Normal Bend)
ETOX
TM*
Flash Technology
Not designed or rated as radiation hardened
The product is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications.
The product can operate at V
CC
=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable
applications.
The memory array block architecture utilizes Enhanced Data Protection features, which provides maximum flexibility for
safe nonvolatile code and data storage.
Special OTP (One Time Program) block provides an area to store permanent code such as an unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.45
LHF00L29 3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-LEAD TSOP
STANDARD PINOUT
12mm x 20mm
TOP VIEW
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
19
NC
WE#
RST#
NC
WP#/ACC
RY/BY#
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
16
NC
GND
DQ
15
DQ
7
DQ
14
DQ
6
DQ
13
DQ
5
DQ
12
DQ
4
V
CC
DQ
11
DQ
3
DQ
10
DQ
2
DQ
9
DQ
1
DQ
8
DQ
0
OE#
GND
CE#
A
0
Figure 1. 48-Lead TSOP (Normal Bend) Pinout
Rev. 2.45
LHF00L29 4
Table 1. Pin Descriptions
Symbol
Type
Name and Function
A
19
-A
0
INPUT
ADDRESS INPUTS: Inputs for addresses.
DQ
15
-DQ
0
INPUT/
OUTPUT
DATA INPUTS/OUTPUTS: Inputs data and commands during CUI (Command User
Interface) write cycles, outputs data during memory array, status register, query code,
identifier code reads. Data pins float to high-impedance (High Z) when the chip or
outputs are deselected. Data is internally latched during an erase or program cycle.
CE#
INPUT
CHIP ENABLE: Activates the device's control logic, input buffers, decoders and sense
amplifiers. CE#-high (V
IH
) deselects the device and reduces power consumption to
standby levels.
RST#
INPUT
RESET: When low (V
IL
), RST# resets internal automation and inhibits write operations
which provides data protection. RST#-high (V
IH
) enables normal operation. After
power-up or reset mode, the device is automatically set to read array mode. RST# must
be low during power-up/down.
OE#
INPUT
OUTPUT ENABLE: Gates the device's outputs during a read cycle.
WE#
INPUT
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are
latched on the rising edge of CE# or WE# (whichever goes high first).
WP#/ACC
INPUT/
SUPPLY
WRITE PROTECT: When WP#/ACC is V
IL
, locked-down blocks cannot be unlocked.
Erase or program operation can be executed to the blocks which are not locked and not
locked-down. When WP#/ACC is V
IH
, lock-down is disabled.
Applying 12.0V0.3V to WP#/ACC provides fast erasing or fast programming mode. In
this mode, WP#/ACC is power supply pin. Applying 12.0V0.3V to WP#/ACC during
erase/program can only be done for a maximum of 1,000 cycles on each block. WP#/
ACC may be connected to 12.0V0.3V for a total of 80 hours maximum. Use of this pin
at 12.0V+0.3V beyond these limits may reduce block cycling capability or cause
permanent damage.
RY/BY#
OPEN DRAIN
OUTPUT
READY/BUSY#: Indicates the status of the internal WSM (Write State Machine). When
low, WSM is performing an internal operation (block erase, full chip erase, program or
OTP program). RY/BY#-High Z indicates that the WSM is ready for new commands,
block erase is suspended and program is inactive, program is suspended, or the device is
in reset mode.
V
CC
SUPPLY
DEVICE POWER SUPPLY (2.7V-3.6V): With V
CC
V
LKO
, all write attempts to the
flash memory are inhibited. Device operations at invalid V
CC
voltage (see DC
Characteristics) produce spurious results and should not be attempted.
GND
SUPPLY
GROUND: Do not float any ground pins.
NC
NO CONNECT: Lead is not internally connected; it may be driven or floated.
Rev. 2.45
LHF00L29 5
64-Kword Block 23
64-Kword Block 22
64-Kword Block 21
64-Kword Block 20
64-Kword Block 19
64-Kword Block 18
64-Kword Block 17
64-Kword Block 16
64-Kword Block 15
64-Kword Block 14
64-Kword Block 13
64-Kword Block 12
64-Kword Block 11
64-Kword Block 10
64-Kword Block 9
[A
19
-
A
0
]
10000
1FFFF
20000
2FFFF
30000
3FFFF
40000
4FFFF
50000
5FFFF
60000
6FFFF
70000
7FFFF
80000
8FFFF
90000
9FFFF
A0000
AFFFF
B0000
BFFFF
C0000
CFFFF
D0000
DFFFF
E0000
EFFFF
F0000
FFFFF
32-Kword Block 8
4-Kword Block 7
4-Kword Block 6
4-Kword Block 5
4-Kword Block 4
4-Kword Block 3
4-Kword Block 2
4-Kword Block 1
4-Kword Block 0
00000
00FFF
01000
01FFF
02000
02FFF
03000
03FFF
04000
04FFF
05000
05FFF
06000
06FFF
07000
07FFF
08000
0FFFF
Figure 2. Memory Map (Bottom Parameter)
Rev. 2.45
LHF00L29 6
NOTES:
1. Block Address = The beginning location of a block address. DQ
15
-DQ
2
are reserved for future implementation.
2. OTP-LK=OTP Block Lock configuration.
3. OTP=OTP Block data.
Table 2. Identifier Codes and OTP Address for Read Operation
Code
Address
[A
19
-A
0
]
Data
[DQ
15
-DQ
0
]
Notes
Manufacturer Code
Manufacturer Code
00000H
00B0H
Device Code
Device Code
00001H
00A5H
Block Lock Configuration
Code
Block is Unlocked
Block
Address
+ 2
DQ
0
= 0
1
Block is Locked
DQ
0
= 1
1
Block is not Locked-Down
DQ
1
= 0
1
Block is Locked-Down
DQ
1
= 1
1
OTP
OTP Lock
00080H
OTP-LK
2
OTP 00081-00088H
OTP
3
Rev. 2.45
LHF00L29 7
Customer Programmable Area Lock Bit (DQ
1
)
Factory Programmed Area Lock Bit (DQ
0
)
Customer Programmable Area
Factory Programmed Area
Reserved for Future Implementation
000080H
000081H
000084H
000085H
000088H
(DQ
15
-DQ
2)
Figure 3. OTP Block Address Map for OTP Program
(The area outside 80H~88H cannot be used.)
[
A
19
-A
0
]
Rev. 2.45
LHF00L29 8
NOTES:
1. Refer to DC Characteristics for V
IL
or V
IH
voltages.
2. X can be V
IL
or V
IH
for control pins and addresses.
3. RST# at GND0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, program or OTP program are reliably
executed when V
CC
=2.7V-3.6V.
5. Refer to Table 4 for valid D
IN
during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LHF00LXX series for more information about query code.
8. RY/BY# is V
OL
when the WSM (Write State Machine) is executing internal block erase, full chip erase, program or OTP
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program inactive),
program suspend mode, or reset mode.
Table 3. Bus Operation
(1, 2)
Mode
Notes RST#
CE#
OE#
WE#
Address
DQ
15-0
RY/BY#
(8)
Read Array
6
V
IH
V
IL
V
IL
V
IH
X
D
OUT
High Z
Output Disable
V
IH
V
IL
V
IH
V
IH
X
High Z
X
Standby
V
IH
V
IH
X
X
X
High Z
X
Reset
3
V
IL
X
X
X
X
High Z
High Z
Read Identifier
Codes/OTP
6
V
IH
V
IL
V
IL
V
IH
See
Table 2
See
Table 2
High Z
Read Query
6,7
V
IH
V
IL
V
IL
V
IH
See
Appendix
See
Appendix
High Z
Read Status
Register
6
V
IH
V
IL
V
IL
V
IH
X
D
OUT
X
Write
4,5,6
V
IH
V
IL
V
IH
V
IL
X
D
IN
X
Rev. 2.45
LHF00L29 9
NOTES:
1. Bus operations are defined in Table 3.
2. All addresses which are written at the first bus cycle should be the same as the addresses which are written at the second
bus cycle.
X=Any valid address within the device.
IA=Identifier codes address (See Table 2).
QA=Query codes address. Refer to Appendix of LHF00LXX series for details.
BA=Address within the block being erased, set/cleared block lock bit or set block lock-down bit.
WA=Address of memory location for the Program command.
OA=Address of OTP block to be read or programmed (See Figure 3).
3. ID=Data read from identifier codes. (See Table 2).
QD=Data read from query database. Refer to Appendix of LHF00LXX series for details.
SRD=Data read from status register. See Table 8 for a description of the status register bits.
WD=Data to be programmed at location WA. Data is latched on the rising edge of WE# or CE# (whichever
goes high first) during command write cycles.
OD=Data within OTP block. Data is latched on the rising edge of WE# or CE# (whichever goes high first)
during command write cycles.
4. Following the Read Identifier Codes/OTP command, read operations access manufacturer code, device code, block lock
configuration code and the data within OTP block (See Table 2).
The Read Query command is available for reading CFI (Common Flash Interface) information.
5. Block erase, full chip erase or program cannot be executed when the selected block is locked. Unlocked block can be
erased or programmed when RST# is V
IH
.
6. Either 40H or 10H are recognized by the CUI (Command User Interface) as the program setup.
7. If the program operation and the erase operation are both suspended, the suspended program operation will be resumed
first.
8. Full chip erase and OTP program operations can not be suspended. The OTP Program command can not be accepted
while the block erase operation is being suspended.
Table 4. Command Definitions
(10)
Command
Bus
Cycles
Req'd
Notes
First Bus Cycle
Second Bus Cycle
Oper
(1)
Addr
(2)
Data
Oper
(1)
Addr
(2)
Data
(3)
Read Array
1
Write
X
FFH
Read Identifier Codes/OTP
2
4
Write
X
90H
Read
IA or OA ID or OD
Read Query
2
4
Write
X
98H
Read
QA
QD
Read Status Register
2
Write
X
70H
Read
X
SRD
Clear Status Register
1
Write
X
50H
Block Erase
2
5
Write
BA
20H
Write
BA
D0H
Full Chip Erase
2
5, 8
Write
X
30H
Write
X
D0H
Program
2
5,6
Write
WA
40H or
10H
Write
WA
WD
Block Erase and
Program Suspend
1
7, 8
Write
X
B0H
Block Erase and
Program Resume
1
7, 8
Write
X
D0H
Set Block Lock Bit
2
Write
BA
60H
Write
BA
01H
Clear Block Lock Bit
2
9
Write
BA
60H
Write
BA
D0H
Set Block Lock-down Bit
2
Write
BA
60H
Write
BA
2FH
OTP Program
2
8
Write
OA
C0H
Write
OA
OD
Rev. 2.45
LHF00L29 10
9. Following the Clear Block Lock Bit command, block which is not locked-down is unlocked when WP#/ACC is V
IL
.
When WP#/ACC is V
IH
, lock-down bit is disabled and the selected block is unlocked regardless of lock-down
configuration.
10. Commands other than those shown above are reserved by SHARP for future device implementations and should not be
used.
Rev. 2.45
LHF00L29 11
NOTES:
1. DQ
0
=1: a block is locked; DQ
0
=0: a block is unlocked.
DQ
1
=1: a block is locked-down; DQ
1
=0: a block is not locked-down.
2. Erase and program are general terms, respectively, to express: block erase, full chip erase and
program operations.
3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is,
[001] (WP#/ACC=0) or [101] (WP#/ACC=1), regardless of the states before power-off or reset
operation.
4. When WP#/ACC is driven to V
IL
in [110] state, the state changes to [011] and the blocks are
automatically locked.
5. OTP (One Time Program) block has the lock function which is different from those described
above.
NOTES:
1. "Set Lock" means Set Block Lock Bit command, "Clear Lock" means Clear Block Lock Bit
command and "Set Lock-down" means Set Block Lock-Down Bit command.
2. When the Set Block Lock-Down Bit command is written to the unlocked block (DQ
0
=0), the
corresponding block is locked-down and automatically locked at the same time.
3. "No Change" means that the state remains unchanged after the command written.
4. In this state transitions table, assumes that WP#/ACC is not changed and fixed V
IL
or V
IH
.
Table 5. Functions of Block Lock
(5)
and Block Lock-Down
Current State
Erase/Program Allowed
(2)
State
WP#/ACC
DQ
1
(1)
DQ
0
(1)
State Name
[000]
0
0
0
Unlocked
Yes
[001]
(3)
0
0
1
Locked
No
[011]
0
1
1
Locked-down
No
[100]
1
0
0
Unlocked
Yes
[101]
(3)
1
0
1
Locked
No
[110]
(4)
1
1
0
Lock-down Disable
Yes
[111]
1
1
1
Lock-down Disable
No
Table 6. Block Locking State Transitions upon Command Write
(4)
Current State
Result after Lock Command Written (Next State)
State WP#/ACC DQ
1
DQ
0
Set Lock
(1)
Clear Lock
(1)
Set Lock-down
(1)
[000]
0
0
0
[001]
No Change
[011]
(2)
[001]
0
0
1
No Change
(3)
[000]
[011]
[011]
0
1
1
No Change
No Change
No Change
[100]
1
0
0
[101]
No Change
[111]
(2)
[101]
1
0
1
No Change
[100]
[111]
[110]
1
1
0
[111]
No Change
[111]
(2)
[111]
1
1
1
No Change
[110]
No Change
Rev. 2.45
LHF00L29 12
NOTES:
1. "WP#/ACC=0
1" means that WP#/ACC is driven to V
IH
and "WP#/ACC=1
0" means that
WP#/ACC is driven to V
IL
.
2. State transition from the current state [011] to the next state depends on the previous state.
3. When WP#/ACC is driven to V
IL
in [110] state, the state changes to [011] and the blocks are
automatically locked.
4. In this state transitions table, assumes that lock configuration commands are not written in
previous, current and next state.
Table 7. Block Locking State Transitions upon WP#/ACC Transition
(4)
Previous State
Current State
Result after WP#/ACC Transition (Next State)
State
WP#/ACC
DQ
1
DQ
0
WP#/ACC=0
1
(1)
WP#/ACC=1
0
(1)
-
[000]
0
0
0
[100]
-
-
[001]
0
0
1
[101]
-
[110]
(2)
[011]
0
1
1
[110]
-
Other than
[110]
(2)
[111]
-
-
[100]
1
0
0
-
[000]
-
[101]
1
0
1
-
[001]
-
[110]
1
1
0
-
[011]
(3)
-
[111]
1
1
1
-
[011]
Rev. 2.45
LHF00L29 13
Table 8. Status Register Definition
R
R
R
R
R
R
R
R
15
14
13
12
11
10
9
8
WSMS
BESS
BEFCES
POPS
WPACCS
PSS
DPS
R
7
6
5
4
3
2
1
0
SR.15 - SR.8 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
SR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
SR.6 = BLOCK ERASE SUSPEND STATUS (BESS)
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
SR.5 = BLOCK ERASE AND FULL CHIP ERASE
STATUS (BEFCES)
1 = Error in Block Erase or Full Chip Erase
0 = Successful Block Erase or Full Chip Erase
SR.4 = PROGRAM AND
OTP PROGRAM STATUS (POPS)
1 = Error in Program or OTP Program
0 = Successful Program or OTP Program
SR.3 = WP#/ACC STATUS (WPACCS)
1 = V
CC
+0.4V < WP#/ACC < 11.7V Detect,
Operation Abort
0 = WP#/ACC OK
SR.2 = PROGRAM SUSPEND
STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
SR.1 = DEVICE PROTECT STATUS (DPS)
1 = Erase or Program Attempted on a
Locked Block, Operation Abort
0 = Unlocked
SR.0 = RESERVED FOR FUTURE ENHANCEMENTS
(R)
NOTES:
Status Register indicates the status of the WSM (Write State
Machine).
Check SR.7 or RY/BY# to determine block erase, full chip
erase, program or OTP program completion. SR.6 - SR.1 are
invalid while SR.7="0".
If both SR.5 and SR.4 are "1"s after a block erase, full chip
erase, program, set/clear block lock bit, set block lock-down
bit attempt, an improper command sequence was entered.
SR.3 does not provide a continuous indication of WP#/ACC
level. The WSM interrogates and indicates the WP#/ACC
level only after Block Erase, Full Chip Erase, Program or
OTP Program command sequences. SR.3 is not guaranteed to
report accurate feedback when WP#/ACC
V
ACCH
.
SR.1 does not provide a continuous indication of block lock
bit. The WSM interrogates the block lock bit only after Block
Erase, Full Chip Erase, Program or OTP Program command
sequences. It informs the system, depending on the attempted
operation, if the block lock bit is set. Reading the block lock
configuration codes after writing the Read Identifier Codes/
OTP command indicates block lock bit status.
SR.15 - SR.8 and SR.0 are reserved for future use and should
be masked out when polling the status register.
Rev. 2.45
LHF00L29 14
1 Electrical Specifications
1.1 Absolute Maximum Ratings
*
Operating Temperature
During Read, Erase and Program ...-40
C to +85C
(1)
Storage Temperature
During under Bias............................... -40
C to +85C
During non Bias................................ -65
C to +125C
Voltage On Any Pin (except V
CC
and WP#/ACC)
................................................. -0.5V to V
CC
+0.5V
(2)
V
CC
Supply Voltage ........................... -0.2V to +3.9V
(2)
WP#/ACC Supply Voltage ......... -0.2V to +12.6V
(2, 3, 4)
Output Short Circuit Current ...........................100mA
(5)
*WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent
damage. These are stress ratings only. Operation
beyond the "Operating Conditions" is not
recommended and extended exposure beyond the
"Operating Conditions" may affect device
reliability.
NOTES:
1. Operating temperature is for extended temperature
product defined by this specification.
2. All specified voltages are with respect to GND.
Minimum DC voltage is -0.5V on input/output pins and
-0.2V on V
CC
and WP#/ACC pins. During transitions,
this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input/output pins is
V
CC
+0.5V which, during transitions, may overshoot to
V
CC
+2.0V for periods <20ns.
3. Maximum DC voltage on WP#/ACC may overshoot to
+13.0V for periods <20ns.
4. WP#/ACC erase/program voltage is normally 2.7V-
3.6V. Applying 11.7V-12.3V to WP#/ACC during
erase/program can be done for a maximum of 1,000
cycles on each block. WP#/ACC may be connected to
11.7V-12.3V for a total of 80 hours maximum.
5. Output shorted for no more than one second. No more
than one output shorted at a time.
Rev. 2.45
1.2 Operating Conditions
NOTES:
1. See DC Characteristics tables for voltage range-specific specification.
2. Applying WP#/ACC=11.7V-12.3V during a erase or program can be done for a maximum of 1,000 cycles on each block.
A permanent connection to WP#/ACC=11.7V-12.3V is not allowed and can cause damage to the device.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Operating Temperature
T
A
-40
+25
+85
C
V
CC
Supply Voltage
V
CC
2.7
3.0
3.6
V
1
WP#/ACC Voltage when Used as a Logic Control
V
IL
-0.2
0.4
V
1
V
IH
2.4
V
CC
+ 0.4
V
WP#/ACC Supply Voltage
V
ACCH
11.7
12.0
12.3
V
1, 2
Block Erase Cycling: WP#/ACC=V
IL
or V
IH
100,000
Cycles
Block Erase Cycling: WP#/ACC=V
ACCH
, 80 hrs.
1,000
Cycles
Maximum WP#/ACC hours at V
ACCH
80
Hours
LHF00L29 15
TEST POINTS
V
CC
/2
V
CC
/2
INPUT
V
CC
0.0
OUTPUT
AC test inputs are driven at V
CC
(min) for a Logic "1" and 0.0V for a Logic "0".
Input timing begins, and output timing ends at V
CC
/2. Input rise and fall times (10% to 90%) < 5ns.
Worst case speed conditions are when V
CC
=V
CC
(min).
DEVICE
UNDER
TEST
RL=3.3K
CL
V
CC
(min)/2
OUT
CL Includes Jig
Capacitances.
1N914
Figure 5. Transient Equivalent Testing Load Circuit
Table 9. Test Configuration Capacitance Loading Value
Test Configuration
C
L
(pF)
V
CC
=2.7V-3.6V
50
1.2.2 AC Input/Output Test Conditions
1.2.1 Capacitance
(1)
(T
A
=
+25C, f=1MHz)
NOTE:
1. Sampled, not 100% tested.
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
=0.0V
4
7
pF
WP#/ACC Input Capacitance
C
IN
V
IN
=0.0V
18
22
pF
Output Capacitance
C
OUT
V
OUT
=0.0V
6
10
pF
Figure 4. Transient Input/Output Reference Waveform for V
CC
=2.7V-3.6V
Rev. 2.45
LHF00L29 16
Rev. 2.45
1.2.3 DC Characteristics
V
CC
=2.7V-3.6V
Symbol
Parameter
Notes
Min.
Typ.
Max.
Unit
Test Conditions
I
LI
Input Load Current
1
-1.0
+1.0
A
V
CC
=V
CC
Max.,
V
IN
/V
OUT
=V
CC
or
GND
I
LO
Output Leakage Current
1
-1.0
+1.0
A
I
CCS
V
CC
Standby Current
1,6,7
4
10
A
V
CC
=V
CC
Max.,
CE#=RST#=
V
CC
0.2V,
WP#/ACC=V
CC
or
GND
I
CCAS
V
CC
Automatic Power Savings
Current
1,3,6
4
10
A
V
CC
=V
CC
Max.,
CE#=GND0.2V,
WP#/ACC=V
CC
or
GND
I
CCD
V
CC
Reset Current
1,6
4
10
A
RST#=GND0.2V
I
CCR
V
CC
Read Current
1,6
17
mA
V
CC
=V
CC
Max.,
CE#=V
IL
,
OE#=V
IH
,
f=5MHz
I
CCW
V
CC
Program Current
1,4,6
20
60
mA
WP#/ACC=V
IL
or V
IH
1,4,6
10
20
mA
WP#/ACC=V
ACCH
I
CCE
V
CC
Block Erase,
Full Chip Erase Current
1,4,6
10
30
mA
WP#/ACC=V
IL
or V
IH
1,4,6
4
10
mA
WP#/ACC=V
ACCH
I
CCWS
I
CCES
V
CC
Program or
Block Erase Suspend Current
1,2,6
10
200
A
CE#=V
IH
I
ACCS
I
ACCR
WP#/ACC Standby or Read Current
1,5,6
2
5
A
WP#/ACC
V
CC
I
ACCW
WP#/ACC Program Current
1,4,5,6
2
5
A
WP#/ACC=V
IL
or V
IH
1,4,5,6
10
30
mA
WP#/ACC=V
ACCH
I
ACCE
WP#/ACC Block Erase,
Full Chip Erase Current
1,4,5,6
2
5
A
WP#/ACC=V
IL
or V
IH
1,4,5,6
5
15
mA
WP#/ACC=V
ACCH
I
ACCWS
WP#/ACC Program
Suspend Current
1,5,6
2
5
A
WP#/ACC=V
IL
or V
IH
1,5,6
10
200
A
WP#/ACC=V
ACCH
I
ACCES
WP#/ACC Block Erase Suspend
Current
1,5,6
2
5
A
WP#/ACC=V
IL
or V
IH
1,5,6
10
200
A
WP#/ACC=V
ACCH
LHF00L29 17
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
CC
=3.0V and T
A
=+25
C
unless V
CC
is specified.
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or program is executed while in block erase suspend
mode, the device's current draw is the sum of I
CCES
and I
CCR
or I
CCW
. If read is executed while in program suspend
mode, the device's current draw is the sum of I
CCWS
and I
CCR
.
3. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
completion. Standard address access timings (t
AVQV
) provide new data when addresses are changed.
4. Sampled, not 100% tested.
5. Applying 12.0V0.3V to WP#/ACC provides fast erasing or fast programming mode. In this mode, WP#/ACC is power
supply pin and supplies the memory cell current for block erasing and programming. Use similar power supply trace
widths and layout considerations given to the V
CC
power bus.
Applying 12.0V0.3V to WP#/ACC during erase/program can only be done for a maximum of 1,000 cycles on each
block. WP#/ACC may be connected to 12.0V0.3V for a total of 80 hours maximum.
6. For all pins other than those shown in test conditions, input level is V
CC
or GND.
7. Includes RY/BY#.
V
IL
Input Low Voltage
5
-0.4
0.4
V
V
IH
Input High Voltage
4
2.4
V
CC
+ 0.4
V
V
OL
Output Low Voltage
4,7
0.2
V
V
CC
=V
CC
Min.,
I
OL
=100
A
V
OH
Output High Voltage
4
V
CC
-0.2
V
V
CC
=V
CC
Min.,
I
OH
=-100A
V
ACCH
WP#/ACC during Block Erase, Full
Chip Erase, Program or OTP Program
Operations
5
11.7
12.0
12.3
V
V
LKO
V
CC
Lockout Voltage
1.5
V
V
CC
=2.7V-3.6V
Symbol
Parameter
Notes
Min.
Typ.
Max.
Unit
Test Conditions
DC Characteristics (Continued)
Rev. 2.45
LHF00L29 18
1.2.4 AC Characteristics - Read-Only Operations
(1)
NOTES:
1. See AC input/output reference waveform for timing measurements and maximum allowable input slew rate.
2. Sampled, not 100% tested.
3. OE# may be delayed up to t
ELQV
t
GLQV
after the falling edge of CE# without impact to t
ELQV
.
V
CC
=2.7V-3.6V, T
A
=-40
C to +85C
Symbol
Parameter
Notes
Min.
Max.
Unit
t
AVAV
Read Cycle Time
70
ns
t
AVQV
Address to Output Delay
70
ns
t
ELQV
CE# to Output Delay
3
70
ns
t
GLQV
OE# to Output Delay
3
20
ns
t
PHQV
RST# High to Output Delay
150
ns
t
EHQZ
, t
GHQZ
CE# or OE# to Output in High Z, Whichever Occurs First
2
20
ns
t
ELQX
CE# to Output in Low Z
2
0
ns
t
GLQX
OE# to Output in Low Z
2
0
ns
t
OH
Output Hold from First Occurring Address, CE# or OE# change
2
0
ns
Rev. 2.45
LHF00L29 19
t
AVQV
t
EHQZ
t
GHQZ
t
ELQV
t
PHQV
t
GLQV
t
OH
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
(P)
(D/Q)
(W)
(G)
(E)
(A)
A
20-0
DQ
15-0
CE#
OE#
WE#
RST#
High Z
t
ELQX
VALID
OUTPUT
VALID
ADDRESS
t
GLQX
t
AVAV
A
19-0
(A)
Figure 6. AC Waveform for Read Operations
Rev. 2.45
LHF00L29 20
1.2.5 AC Characteristics - Write Operations
(1), (2)
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, program and OTP program
operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations.
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
WP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
CE# or WE# (whichever goes high first). Hence, t
WP
=t
WLWH
=t
ELEH
=t
WLEH
=t
ELWH
.
5. Write pulse width high (t
WPH
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
edge of CE# or WE# (whichever goes low last). Hence, t
WPH
=t
WHWL
=t
EHEL
=t
WHEL
=t
EHWL
.
6. t
WHR0
(t
EHR0
) after the Read Query or Read Identifier Codes/OTP command=t
AVQV
+100ns.
7. Refer to Table 4 for valid address and data for block erase, full chip erase, program, OTP program or lock bit
configuration.
V
CC
=2.7V-3.6V, T
A
=-40
C to +85C
Symbol
Parameter
Notes
Min.
Max.
Unit
t
AVAV
Write Cycle Time
70
ns
t
PHWL
(t
PHEL
)
RST# High Recovery to WE# (CE#) Going Low
3
150
ns
t
ELWL
(t
WLEL
)
CE# (WE#) Setup to WE# (CE#) Going Low
0
ns
t
WLWH
(t
ELEH
)
WE# (CE#) Pulse Width
4
50
ns
t
DVWH
(t
DVEH
)
Data Setup to WE# (CE#) Going High
7
40
ns
t
AVWH
(t
AVEH
)
Address Setup to WE# (CE#) Going High
7
50
ns
t
WHEH
(t
EHWH
) CE# (WE#) Hold from WE# (CE#) High
0
ns
t
WHDX
(t
EHDX
)
Data Hold from WE# (CE#) High
0
ns
t
WHAX
(t
EHAX
)
Address Hold from WE# (CE#) High
0
ns
t
WHWL
(t
EHEL
)
WE# (CE#) Pulse Width High
5
20
ns
t
SHWH
(t
SHEH
)
WP#/ACC High Setup to WE# (CE#)
Going High
WP#/ACC=V
IH
3
0
ns
WP#/ACC=V
ACCH
200
t
WHGL
(t
EHGL
)
Write Recovery before Read
30
ns
t
QVSL
WP#/ACC High Hold from Valid SRD, RY/BY# High Z
3
0
ns
t
WHR0
(t
EHR0
)
WE# (CE#) High to SR.7 Going "0"
3, 6
t
AVQV
+50
ns
t
WHRL
(t
EHRL
)
WE# (CE#) High to RY/BY# Going Low
3
100
ns
Rev. 2.45
LHF00L29 21
t
AVAV
t
AVWH
(t
AVEH
)
t
WHAX
(t
EHAX
)
t
ELWL
(t
WLEL
)
t
PHWL
(t
PHEL
)
t
WLWH
t
WHWL
(t
EHEL
)
t
WHDX
(t
EHDX
)
t
DVWH
(t
DVEH
)
t
SHWH
(t
SHEH
)
t
WHQV1,2,3,4
(t
EHQV1,2,3,4
)
t
QVSL
t
WHEH
(t
EHWH
)
t
WHGL
(t
EHGL
)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
(D/Q)
(W)
(G)
(E)
(A)
NOTES 5, 6
A
20-0
DQ
15-0
V
IH
V
IL
(P)
RST#
CE#
OE#
WE#
V
IH
V
IL
(S)
WP#
(t
ELEH
)
NOTE 1
NOTE 2
NOTE 3
NOTE 4
NOTE 5
VALID
ADDRESS
VALID
ADDRESS
VALID
ADDRESS
DATA IN
DATA IN
VALID
SRD
NOTES:
1. V
CC
power-up and standby.
2. Write each first cycle command.
3. Write each second cycle command or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. For read operation, OE# and CE# must be driven active, and WE# de-asserted.
("1")
V
OL
(R)
RY/BY#
(SR.7)
High Z
("0")
(t
WHR0
(t
EHR0
))
t
WHRL
(t
EHRL
)
NOTES 5, 6
Figure 7. AC Waveform for Write Operations
Rev. 2.45
WP#/ACC (S)
V
IH
, V
ACCH
A
19-0
(A)
LHF00L29 22
ABORT
COMPLETE
t
PLPH
t
PLPH
t
2VPH
t
PLRH
t
PHQV
t
PHQV
(A) Reset during Read Array Mode
(B) Reset during Erase or Program Mode
(C) RST# rising timing
RST#
RST#
V
IL
V
IH
V
IL
V
IH
V
CC
GND
V
CC
(min)
RST#
V
IL
V
IH
SR.7="1"
V
OH
V
OL
(D/Q)
DQ
15-0
VALID
OUTPUT
High Z
(P)
(P)
(P)
V
OH
V
OL
(D/Q)
DQ
15-0
VALID
OUTPUT
High Z
V
OH
V
OL
(D/Q)
DQ
15-0
VALID
OUTPUT
High Z
t
PHQV
t
VHQV
NOTES:
1. A reset time, t
PHQV
, is required from the later of SR.7 (RY/BY#) going "1" (High Z) or RST# going high until outputs are
valid. Refer to AC Characteristics - Read-Only Operations for t
PHQV
.
2. t
PLPH
is <100ns the device may still reset but this is not guaranteed.
3. Sampled, not 100% tested.
4. If RST# asserted while a block erase, full chip erase, program or OTP program operation is not executing, the reset will
complete within 100ns.
5. When the device power-up, holding RST# low minimum 100ns is required after V
CC
has been in predefined range and
also has been in stable there.
Reset AC Specifications (V
CC
=2.7V-3.6V, T
A
=-40
C to +85C)
Symbol
Parameter
Notes
Min.
Max.
Unit
t
PLPH
RST# Low to Reset during Read
(RST# should be low during power-up.)
1, 2, 3
100
ns
t
PLRH
RST# Low to Reset during Erase or Program
1, 3, 4
22
s
t
2VPH
V
CC
2.7V to RST# High
1, 3, 5
100
ns
t
VHQV
V
CC
2.7V to Output Delay
3
1
ms
Figure 8. AC Waveform for Reset Operations
1.2.6 Reset Operations
Rev. 2.45
LHF00L29 23
Rev. 2.45
1.2.7 Block Erase, Full Chip Erase, Program and OTP Program Performance
(3)
NOTES:
1. Typical values measured at V
CC
=3.0V, WP#/ACC=3.0V or 12.0V, and T
A
=+25
C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1" or RY/BY#
going High Z.
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than t
ERES
and its sequence is repeated, the block erase operation may not be finished.
V
CC
=2.7V-3.6V, T
A
=-40
C to +85C
Symbol
Parameter
Notes
WP#/ACC=V
IL
or V
IH
(In System)
WP#/ACC=V
ACCH
(In Manufacturing)
Unit
Min. Typ.
(1)
Max.
(2)
Min. Typ.
(1)
Max.
(2)
t
WPB
4-Kword Parameter Block
Program Time
2
0.05
0.3
0.04
0.12
s
t
WMB1
32-Kword Block
Program Time
2
0.34
2.4
0.31
1.0
s
t
WMB2
64-Kword Block
Program Time
2
0.68
4.8
0.62
2.0
s
t
WHQV1
/
t
EHQV1
Word Program Time
2
10
200
9
185
s
t
WHOV1
/
t
EHOV1
OTP Program Time
2
36
400
27
185
s
t
WHQV2
/
t
EHQV2
4-Kword Parameter Block
Erase Time
2
0.26
4
0.2
4
s
t
WHQV3
/
t
EHQV3
32-Kword Block
Erase Time
2
0.51
5
0.5
5
s
t
WHQV4
/
t
EHQV4
64-Kword Block
Erase Time
2
0.82
8
0.8
8
s
Full Chip Erase Time
2
20
175
16.5
175
s
t
WHRH1
/
t
EHRH1
Program Suspend
Latency Time to Read
4
5
10
5
10
s
t
WHRH2
/
t
EHRH2
Block Erase Suspend
Latency Time to Read
4
5
20
5
20
s
t
ERES
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
5
500
500
s
LHF00L29 24
Rev. 2.45
2 Related Document Information
(1)
NOTE:
1. International customers should contact their local SHARP or distribution sales offices.
Document No.
Document Name
FUM03802
LHF00LXX series Appendix
Rev. 1.10
i
A-1 RECOMMENDED OPERATING CONDITIONS
A-1.1 At Device Power-Up
AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up.
If the timing in the figure is ignored, the device may not operate correctly.
Figure A-1. AC Timing at Device Power-Up
For the AC specifications t
VR
, t
R
, t
F
in the figure, refer to the next page. See the "ELECTRICAL SPECIFICATIONS"
described in specifications for the supply voltage range, the operating temperature and the AC specifications not shown in
the next page.
t
2VPH
V
CC
GND
V
CC
(min)
RP#
V
IL
V
IH
(P)
t
PHQV
CE#
V
IL
V
IH
(E)
WE#
V
IL
V
IH
(W)
OE#
V
IL
V
IH
(G)
V
OH
V
OL
(D/Q)
DATA
High Z
Valid
Output
t
VR
t
F
t
ELQV
t
F
t
GLQV
(A)
ADDRESS
Valid
(RST#)
t
R
or
t
F
Address
V
IL
V
IH
t
AVQV
t
R
or
t
F
t
R
t
R
Rev. 1.10
ii
A-1.1.1 Rise and Fall Time
NOTES:
1. Sampled, not 100% tested.
2. This specification is applied for not only the device power-up but also the normal operations.
Symbol
Parameter
Notes
Min.
Max.
Unit
t
VR
V
CC
Rise Time
1
0.5
30000
s/V
t
R
Input Signal Rise Time
1, 2
1
s/V
t
F
Input Signal Fall Time
1, 2
1
s/V
Rev. 1.10
iii
A-1.2 Glitch Noises
Do not input the glitch noises which are below V
IH
(Min.) or above V
IL
(Max.) on address, data, reset, and control signals,
as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a).
Figure A-2. Waveform for Glitch Noises
See the "DC CHARACTERISTICS" described in specifications for V
IH
(Min.) and V
IL
(Max.).
(a) Acceptable Glitch Noises
Input Signal
V
IH
(Min.)
Input Signal
V
IH
(Min.)
Input Signal
V
IL
(Max.)
Input Signal
V
IL
(Max.)
(b)
NOT
Acceptable Glitch Noises
Rev. 1.10
iv
A-2 RELATED DOCUMENT INFORMATION
(1)
NOTE:
1. International customers should contact their local SHARP or distribution sales office.
Document No.
Document Name
AP-001-SD-E
Flash Memory Family Software Drivers
AP-006-PT-E
Data Protection Method of SHARP Flash Memory
AP-007-SW-E
RP#, V
PP
Electric Potential Switching Circuit
SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE.
Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited
Warranty for SHARP's product warranty. The Limited Warranty is in lieu, and exclusive of, all other warranties, express or implied.
ALL EXPRESS AND IMPLIED WARRANTIES, INCLUDING THE WARRANTIES
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