Integrated Circuits Group
LH28F008SAN-12
Flash Memory
8M (1MB 8)
(Model No.:
LHF08SZJ)
Spec No.:
EL114085
Issue Date:
April 28, 1999
P
RODUCT
S
PECIFICATIONS
LHF08SZJ
Handle this document carefully for it contains material protected by international
copyright law. Any reproduction, full or in part, of this material is prohibited
without the express written permission of the company.
When using the products covered herein, please observe the conditions written herein
and the precautions outlined in the following paragraphs. In no event shall the
company be liable for any damages resulting from failure to strictly adhere to these
conditions and precautions.
(1) The products covered herein are designed and manufactured for the following
application areas. When using the products covered herein for the equipment
listed in Paragraph (2), even for the following application areas, be sure
to observe the precautions given in Paragraph (2). Never use the products
for the equipment listed in Paragraph (3).
Office electronics
Instrumentation and measuring equipment
Machine tools
Audiovisual equipment
Home appliance
Communication equipment other than for trunk lines
(2) Those contemplating using the products covered herein for the following
equipment which demands high reliability, should first contact a sales
representative of the company and then accept responsibility for incorporating
into the design fail-safe operation, redundancy, and other appropriate
measures for ensuring reliability and safety of the equipment and the overall system.
Control and safety devices for airplanes, trains, automobiles, and other
transportation equipment
Mainframe computers
Traffic control systems
Gas leak detectors and automatic cutoff devices
Rescue and security equipment
Other safety devices and safety equipment,etc.
(3) Do not use the products covered herein for the following equipment which
demands extremely high performance in terms of functionality, reliability, or accuracy.
Aerospace equipment
Communications equipment for trunk lines
Control equipment for the nuclear power industry
Medical equipment related to life support, etc.
(4) Please direct all queries and comments regarding the interpretation of the
above three Paragraphs to a sales representative of the company.
Please direct all queries regarding the products covered herein to a sales
representative of the company.
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LHF08SZJ
CONTENTS
1
FEATURES
2
2
PRODUCT OVERVIEW
3
3
PRINCIPLES OF OPERATION
8
4
BUS OPERATION
9
5
COMMAND DEFINITIONS
11
6
EXTENDED BLOCK ERASE/BYTE WRITE CYCLING
13
7
AUTOMATED BYTE WRITE
13
8
AUTOMATED BLOCK ERASE
13
9
DESIGN CONSIDERATIONS
13
10 ABSOLUTE MAXIMUM RATINGS
18
11 OPERATING CONDITIONS
18
12 DC CHARACTERISTICS
18
13 CAPACITANCE
19
14 AC CHARACTERISTICS
20
15 BLOCK ERASE AND BYTE WRITE PERFORMANCE
23
16 ALTERNATIVE CE#-CONTROLLED WRITES
25
17 PACKAGING AND PACKING SPECIFICATION
27
1
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2
LHF08SZJ
Very High-Performance Read
- 120ns Maximum Access Time
Operating Temperature
- 0C to +70C
SRAM-Compatible Write Interface
Hardware Data Protection Feature
- Erase/Write Lockout during Power Transi-
tions
Industry Standard Packaging
- 44-Lead PSOP
ETOXTM* Nonvolatile Flash Technology
- 12V Byte Write/Block Erase
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
1.
FEATURES
High-Density Symmetrically Blocked Architec-
ture
- Sixteen 64K-Byte Blocks
Extended Cycling Capability
- 100,000 Block Erase Cycles
- 1.6 Million Block Erase Cycles per Chip
Automated Byte Write and Block Erase
- Command User Interface
- Status Register
System Performance Enhancements
- RY/BY# Status Output
- Erase Suspend Capability
Deep-Powerdown Mode
- 10
A I
CC
Maximum
SHARP's LH28F008SAN-12 8 Mbit Flash Memory is the highest density nonvolatile read/write solution for solid state
storage. The LH28F008SA's extended cycling, symmetrically blocked architecture, fast access time, write automation and
low power consumption provide a more reliable, lower power, lighter weight and higher performance alternative to tradi-
tional rotating disk technology. The LH28F008SAN-12 brings new capabilities to portable computing. Application and
operating system software stored in resident flash memory arrays provide instant-on rapid execute-in-place and protection
from obsolescence through in-system software updates. Resident software also extends system battery life and increases
reliability by reducing disk drive accesses.
For high density data acquisition applications, the LH28F008SAN-12 offers a more cost-effective and reliable alternative to
SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take advantage of
the LH28F008SA's nonvolatility, blocking and minimal system code requirements for flexible firmware and modular soft-
ware designs.
The LH28F008SAN-12 is offered in 44-lead PSOP package. Pin assignments simplify board layout when integrating
multiple devices in a flash memory array or subsystem. This device uses an integrated Command User Interface and state
machine for simplified block erasure and byte write. The LH28F008SAN-12 memory map consists of 16 separately
erasable 64K-byte blocks.
SHARP's LH28F008SAN-12 employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity. Its 120ns access time provides superior performance when compared with magnetic storage media. A deep
powerdown mode lowers power consumption to 50
W maximum thru V
CC
, crucial in portable computing, handheld instru-
mentation and other low-power applications. The RP# power control input also provides absolute data protection during
system powerup/down.
* ETOX is a trademark of Intel Corporation.
LH28F008SAN-12
8M-BIT (1MBit x 8) FLASH MEMORY
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