Hologram Laser(1 beam) for Magneto-Optical disk
TEC N 940525
LT0H12M
s
Features
(1) Maximum optical output: 35mW
(2) Pickups reduced in size and weight on request
(3) The housing of pickups shifted from aluminum
die-cast to formed resin on request (reducing the
weight to 1/3)
(4) Since its semiconductor laser, signal detection
photocell, and circuit array are assembled in a
package, the optical pickup is simple in
assembling and adjustment
s
Applications
(1) Magneto-optical disk drives
(2) CD-Rs
s
Outline Dimensions
Hologram Laser
*2 Case temperature
*3 At the position of 1.6mm from the
bottom face of resin package.
*1 Output power from LD chip
s
Absolute Maximum Ratings
Parameter
Ratings
Units
Optical power output*1
P
O
35
mW
Laser
2
Reverse
voltage
Monitor photodiode
V
R
30
V
Photodiode for signal detection
15
Operating temperature*2
Topr
-10 to +50
Storage temperature *2
Tstg
-40 to +85
C
Soldering temperature *3
Tsol
260(5s or less)
Symbol
3
4
7
9
1
2
8
10
G
D1
D2
D3
D4
Monitor photodiode
1.0
0.4
45
7
5
1
6
2
9
8
4
3
allowance =
0.2mm
4.9
45
X
Y
10
Hologram glass
Cap glass
LD chip
Reference surface
9.0
7.6
10 -
0.45
Z
6.6
3.6
(Notice)
In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Specifications are subject to change without notice for improvement.
Laser diode
[Terminal connection]
(Unit: mm)
TEC N 940525
Laser diode
=780nm
R
L
=180
V
R
=15V
Input
Output
*6 Measuring method is shown below
*1 Output power form LD chip
*2 Oscillation mode, transverse single mode
*3 An angle for 50% of the peak intensity (full angle at half maximum).
*4 Values in each element. Elements other than subject elements shall be measured
while the anode and the cathode are short-circuited to each other
*5 Illumination intensity by CIE standard light (Tungsten lamp)
s
Electro-optical Characteristics
Parameter
Symbol
Condition
MIN
TYP
MAX
Units
Threshold current
Ith
-
-
60
80
mA
Operating current
Iop
-
115
150
mA
Operating voltage
Vop
P
o
=30mW *1
-
1.85
2.2
V
Wavelength *2
p
770
780
795
nm
Monitor current
Im
P
o
=30mW *1 ,V
R
=15V
0.1
0.3
2
mA
Angle
Parallel
8
9.5
13
Laser
Radiation
Characteristics
*3
Perpen-
dicular
20.
26
32
(without
hologram
glass)
Ripple
P
O
=30mW *1
-20
-
20
%
-2
-
2
Emission
Point
accuracy
Angle
-3
-
3
Positon
-
-80
-
80
m
20mW
Differentioal efficiency
Iop(30mW) - Iop(10mW)
0.3
0.55
0.8
mW/mA
Sensitivity
S
-
10
-
A/mW
Monitor
Photodiode
Dark current
I
D
V
R
=15V
-
-
150
nA
Terminal capacitance
Ct
-
8
-
pF
Reverse voltage
V
R
I
R
=10
A
15
-
-
V
Dark current
I
d
V
R
=15V
-
-
20
nA
0.6
2.8
5
Photodiode
Terminal capacitance
Ct
V
R
=15V,f=1MH
Z
0.8
3
5.4
pF
for signal
detection
85
170
270
Short circuit current *4
Isc
Ev=1000Lx *5
260
460
670
nA
Response time *6
t
r
,
t
f
V
R
=15V,R
L
=180
-
10
140
ns
A,B
A,B
A
B
A
B
A,B
D2
D3
D4
D1
Input
Output
90%
10%
t
r
t
f
50%
//
//
X
,Y,Z
LT0H12M
(Tc=25C)
D2,D3 A
D1,D4 B
Segment No.
*7 Applicabledivisions correspond to pattern segment No.
LT0H12M
*1 Measuring method is shown below.
Measuring method of electro-optical characteristics
MO Disk
Laser
Driver
HL
C.L.
Actuator
O.L
NA=0.35
f=6.0mm
NA=0.5
f=3.45mm
* Distance between
C.L-O.L: 27mm C.L: Collimator lens O.L: Objective lens
(Tc=25C)
Parameter
Condition
MIN
TYP
MAX
Units
Focus error signal offsetting *2
-20
-12
-4
%
Lead-in for focus error signal *3
-
90
-
m
Radial offsetting *4
-10
-
10
%
FES Output amplitude *5
Laser output 4.2mW
2.4
3.9
5.0
A p-p
RES Output amplitude *5
2.5
3.3
4.1
A p-p
s
Electro-optical Characteristics *1
TEC N 940525
*2 FES output (a)/FESp-p at Maximum point of
the FES output amplitude
FESp-p
a
GND
a
b
GND
*4 ( a - b ) / 2 ( a + b )
*5 Values at 4.2mW of the laser output
Both FES output amplitude (D2-D3)
and RES output amplitude (D1-D4) are
p-p values at focusing oscillation
GND
a
b
*3
*4 ( a - b ) / ( a + b )
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