1. High current transfer ratio
2. Opaque type, mini-flat package
PC355NT
( 1-channel )
3. Subminirature type
( The volume is smaller than that of our
4. Isolation voltage between input and output
5. Recognized by UL (NO. E64380)
s
Applications
s
Package Specifications
mounting.
2. Programmable controllers
s
Outline Dimensions
( CTR : MIN. 600% at I
F
= 1mA, V
CE
= 2V)
1. Hybrid substrates that require high density
(Unit : mm )
conventional DIP type by as far as 30%)
PC355NT
Input side
diagram
Internal connection
355
Anode
C0.4
mark
6
PC355NT
3
4
2
1
1
2
3
4
1 Anode
2 Cathode
3 Emitter
4 Collector
s
Features
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
High Sensitivity Photocoupler
Mini-Flat Package,
PC355NT
PC355NT
Viso : 3 750V
rms
4.4
0.2
2.54
0.25
0.4
0.1
3.6
0.3
2.6
0.2
0.1
0.1
5.3
0.3
0.2
0.05
7.0
+
0.2
-
0.7
0.5
+
0.4
-
0.2
Model No.
Taping specifications
PC355NT
Taping reel diameter
178mm (750pcs.)
*3 For 10 senconds
(Ta = 25C )
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
*1
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Power dissipation
P
70
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
6
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
150
mW
Total power dissipation
170
mW
*2
Isolation voltage
V
Operating temperature
C
Storage temperature
C
*3
Soldering temperature
260
C
V
ECO
P
tot
T
opr
T
stg
T
sol
0.2mm or more
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 20mA
-
1.2
1.4
V
I
R
V
R
= 4V
-
-
10
A
Terminal capacitance
C
t
-
30
250
pF
Output
Collector dark current
I
CEO
V
CE
= 10V, I
F
= 0
-
-
A
Collector-emitter breakdown voltage
BV
CEO
I
C
= 0.1mA, I
F
= 0
35
-
-
V
Emitter-collector breakdown voltage
BV
ECO
I
E
= 10
A, I
F
= 0
6
-
-
V
Transfer-
charac-
teristics
Current transfer ratio
CTR
I
F
= 1mA, V
CE
= 2V
600
%
Collector-emitter saturation voltage
V
CE( sat )
I
F
= 20mA, I
C
= 1mA
-
0.8
1.0
V
Isolation resistance
R
ISO
5 x 10
10
10
11
-
Floating capacitance
C
f
V = 0, f = 1MHz
-
0.6
1.0
pF
Response time
Rise time
t
r
V
CE
= 2V, I
C
= 2mA
R
L
= 100
-
60
300
s
Fall time
-
53
250
s
(Ta = 25C )
- 30 to + 100
- 40 to + 125
s
Absolute Maximum Ratings
s
Electro-optical Characteristics
t
f
10
- 6
Soldering area
iso
*1 Pulse width <=100
s, Duty ratio : 0.001
Reverse current
V = 0, f = 1kHz
3 750
*2 40 to 60% RH, AC for 1 minute
DC500V, 40 to 60% RH
1 600
7 500
PC355NT
V
rms
Duty ratio
Diode power dissipation P
(
mW
)
5
10
20
50
100
200
500
5
2
5
2
5
2
5
300
250
200
150
100
50
0
170
0
50
100
25
100
80
60
40
20
0
0
50 55
100
70
0
25
50
75
100
125
70
60
50
40
30
20
10
0
0
0
25
50
75
100
125
200
150
100
50
Forward current I
F
(
mA
)
- 30
Collector power dissipation P
C
(
mW
)
- 30
Peak forward current I
FM
(
mA
)
10
- 3
10
- 2
10
- 1
- 30
Total power dissipation P
tot
(
mW
)
- 30
Fig. 2 Diode Power Dissipation vs.
Ambient Temperature
Fig. 3 Collector Power Dissipation vs.
Ambient Temperature
Fig. 4 Total Power Dissipation vs.
Ambient Temperature
Fig. 5 Peak Forward Current vs.
Duty Ratio
Fig. 1 Forward Current vs. Ambient
Temperature
Ambient temperature T
a
(C)
Ambient temperature T
a
( C)
Ambient temperature T
a
(C)
Ambient temperature T
a
( C)
Fig. 6 Forward Current vs. Forward Voltage
Pulse width <=100
s
1
T
a
= 25C
10000
5000
2000
1000
PC355NT
50C
25C
0C
0
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
5
10
20
50
100
200
500
1
- 25C
T
a
= 75C
Forward current I
F
(
mA
)
Forward voltage V
F
( V)
100
80
40
20
0
5
4
3
2
1
0
60
1mA
2mA
5mA
100
10
1
0.1
Current transfer ratio CTR
(
%
)
0
100
20
0
- 30
1.6
1.0
0.6
40
0
60
80
80
60
0
40
50
100
150
Relative current transfer ratio
(
%
)
- 30
0
20
100
0.2
0.4
0.8
1.2
1.4
5
5
5
5
5
5
80
60
40
20
0
- 30
100
0.01
0.1
1
10
500
200
50
0.2
0.5
2
10
0.1
1
5
20
100
100
Forward current I
F
( mA )
Collector dark current I
CEO
(
A
)
10
- 5
10
- 6
10
- 7
10
- 8
10
- 9
10
- 10
10
- 11
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
Response time
(
s
)
Fig. 7 Current Transfer Ratio vs.
Forward Current
Fig. 9 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.10 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Fig.11 Collector Dark Current vs.
Ambient Temperature
Fig. 8 Collector Current vs. Collector-
emitter Voltage
Ambient temperature T
a
(C)
Collector-emitter saturation voltage
V
CE
( sat
)
(
V
)
Ambient temperature T
a
(C)
Ambient temperature T
a
(C)
T
a
= 25C
V
CE
= 2V
I
F
= 10mA
T
a
= 25C
P
C
( MAX.)
V
CE
= 2V
I
F
= 1mA
I
C
= 1mA
I
F
= 20mA
V
CE
= 10V
V
CE
= 2V
I
C
= 2mA
T
a
= 25C
t
s
t
d
t
f
t
r
5000
4000
3000
2000
1000
PC355NT
Fig.12 Responce Time vs. Load Resistance
Load resistance R
L
( k
)
0
0.8
1.6
2.4
3.2
4.0
0
1.6
3.2
4.8
6.4
1mA
3mA
5mA
7mA
30mA
50mA
Forward current I
F
( mA )
10
%
90
%
Output
Input
Input
Output
R
L
V
CC
R
D
t
s
t
d
t
r
t
f
Test Circuit For Response Time
s
Temperature Profile of Soldering Reflow
( 1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
( 2) When using another soldering method such as infrared ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above ( 1) .
30 seconds
230
C
200
C
180
C
25
C
2 minutes
1.5 minutes
1 minute
1 minute
Fig.13 Collector-emitter Saturation Voltage
vs. Forward Current
Collector-emitter saturation voltage
V
CE
( sat
)
(
V
)
T
a
= 25C
I
C
= 0.5mA
PC355NT
Please refer to the chapter " Precautions for Use."
q
PDF 
ZIP