S11MD4V/S11MD4T
S11MD4V/S11MD4T
s
Features
s
Applications
1. For triggering medium/high power triacs
1 50Hz sine wave
3 For 10 seconds
f = 60Hz
s
Absolute Maximum Ratings
( Ta = 25C)
s
Outline Dimensions
( Unit : mm)
S11MD4V
Anode
mark
S11MD4V
S11MD4T
S11MD4T
Internal connection
diagram
Zero-cross
circuit
Internal connection
diagram
Zero-cross
circuit
Anode
mark
1
2
3
4
5
6
1
2
3
4
5
6
1
2
3
4
6
1
2
3
4
6
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
5 No exter-
nal con-
nection
6 Anode/
Cathode
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
6 Anode/
Cathode
1. Pin No. 5 completely molded for external
3. Built-in zero-cross circuit
4. High repetitive peak OFF-state voltage
(V
DRM
: MIN. 400V )
g
S11MD4V
and
S11MD4T
are for 100V
lines.
Parameter
Symbol
Rating
Unit
S11MD4V/S11MD4T
Input
Forward current
I
F
50
mA
Reverse voltage
V
R
6
V
Output
RMS ON-state
current
I
T
0.1
surge current
1
Peak one cycle
I
surge
1.2
A
Repetitive peak
OFF-state voltage
V
DRM
400
V
*2
Isolation voltage
V
iso
Operating temperature
T
opr
C
Storage temperature
T
stg
- 55 to +125
C
3
Soldering temperature
T
sol
260
C
Phototriac Coupler with
Built-in Zero-cross Circuit
noise resistance
(S11MD4T)
2. Dual-in-line package type
(S11MD4V)
V
iso
5. Isolation voltage between input and output
2 40 to 60% RH, AC for 1 minute,
6. Recognized by UL, file No.E64380
5 000
- 30 to +100
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
: 5 000V
rms
(S11MD4V/S11MD4T )
A
rms
V
rms
:
0 to 13
6.5
0.5
2.54
0.25
0.9
0.2
1.2
0.3
7.62
0.3
0.26
0.1
0.5
0.1
0.5
TYP.
3.5
0.5
3.7
0.5
7.12
0.5
3.35
0.5
:
0 to 13
6.5
0.5
0.9
0.2
1.2
0.3
2.54
0.25
7.12
0.5
7.62
0.3
0.26
0.1
0.5
0.1
0.5
TYP.
3.5
0.5
3.7
0.5
3.35
0.5
S11MD4V/S11MD4T
( Ta = 25C)
Parameter
Symbol
Conditions MIN.
TYP.
MAX.
Unit
Forward voltage
V
F
I
F
= 20mA
-
1.2
1.4
V
Reverse current
I
R
V
R
= 3V
-
-
10
-5
A
Repetitive peak OFF-state
current
I
DRM
V
DRM
-
-
10
-6
A
ON-state voltage
V
T
I
T
= 0.1A
-
1.7
2.5
V
Holding current
I
H
V
D
= 6V
0.1
3.5
mA
Critical rate of rise of
OFF-state voltage
100
-
-
V/
s
Zero-cross voltage
V
OX
-
-
35
V
Minimum trigger current
I
FT
V
D
= 6V. R
L
= 100
-
-
10
mA
Isolation resistance
R
ISO
5 x 10
10
10
11
-
Turn-on time
t
on
V
D
= 6V, R
L
= 100
, I
F
= 20mA
-
20
50
s
2
V
DRM
= 1/
Rated
- 30
0
20
40
60
80
100
0
0.05
0.10
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
Ambient temperature T
a
(C)
-30
0
25
50
75
100
125
0
10
20
30
40
50
60
70
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
-30
0
20
40
60
80
100
0
2
4
6
8
10
12
14
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
Minimum trigger current I
FT
(
mA
)
Ambient temperature T
a
(C)
T
rms
)
s
Electro-optical Characteristics
Input
Output
Transfer
charac-
teristics
1.0
RMS ON-state current I
(
A
Forward current I
F
(
mA
)
Fig. 3 Forward Current vs. Forward Voltage
Forward voltage V
F
(V)
R
L
= 100
V
D
= 6V
= Rated
dV/dt
DC500V, 40 to 60% RH
200
10
5
2
1
0
0.5
1.0
1.5
2.5
3.0
2.0
100
20
50
75C
50C
25C
0C
- 30C
T
a
= 100C
Resistance load, I
F
= 15mA
S11MD4V/S11MD4T
Ambient temperature T
a
(C)
-30
0
20
40
60
80
100
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Fig. 5 Relative Repetitive Peak OFF-state
-30
0
20
40
60
80
100
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Fig. 6 ON-state Voltage vs.
Ambient Temperature
T
(
V
)
Ambient temperature T
a
(C)
-30
0
20
40
60
80
100
0.2
1
0.1
0.5
2
5
10
Fig. 7 Holding Current vs.
Ambient Temperature
Holding current I
H
(
mA
)
Ambient temperature T
a
(C)
100
200
300
400
500
600
5
10
- 8
10
- 7
2
5
2
OFF-state voltage V
D
(V)
-30
0
20
40
60
80
100
5
2
5
2
5
2
5
10
- 6
10
- 5
10
- 7
10
- 8
10
- 9
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient temperature T
a
(C)
2
5
-30
0
20
40
60
80
100
15
20
25
Fig.10 Zero-cross Voltage vs.
Zero-cross voltage V
OX
(
V
)
Ambient temperature T
a
(C)
V
DRM
(
T
j
=T
a
)
/V
DRM
(
T
j
=
25C
)
DRM
(
A
)
DRM
(
A
)
R load
Voltage vs. Ambient Temperature
Relative repetitive peak OFF-state voltage
ON-state voltage V
Repetitive peak OFF-state current I
Ambient Temperature
Ambient Temperature
Repetitive peak OFF-state current I
I
T
= 100mA
V
D
= 6V
T
a
= 25C
V
DRM
= 400V
I
F
= 15mA
Fig. 8 Repetitive Peak OFF-state Current vs.
OFF-state Voltage
S11MD4V/S11MD4T
Fig.11 ON-state Current vs. ON-state Voltage
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
10
20
30
40
50
60
70
80
90
100
T
(
mA
)
T
(V)
Load
Zero-
cross
circuit
AC100V
1
2
3
4
6
+
V
CC
V
IN
s
Basic Operation Circuit
ON-state current I
ON-state voltage V
Medium/High Power Triac Drive Circuit
Note) Please use on condition of the triac for power triggers.
T
a
= 25C
I
F
= 20mA
q
Please refer to the chapter "Precautions for Use."
115
Application Circuits
NOTICE
qThe circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
qContact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
qObserve the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
qContact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
qIf the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
qThis publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
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publication.
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