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Электронный компонент: S11MS3

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S11MS3/
S21MS3/S21MS4
S11MS3/S21MS3/S21MS4
s
Absolute Maximum Ratings
s
Features
( 3.6 x 4.4 x 2.0mm)
2. Built-in zero-cross circuit
output (V
iso
rms
)
s
Applications
1. For triggering of medium/high power
triacs
1 The definition of conduction angle
of effective ON current I
T
should be as shown
in the right drawing.
2 50Hz sine wave
( Ta = 25C)
s
Outline Dimensions
(Unit : mm )
Parameter
Symbol
Rating
Unit
S11MS3
S21MS3/S21MS4
Forward current
I
F
50
mA
Input
Reverse voltage
V
R
6
V
1
RMS ON-state current
I
T
0.05
A
rms
2
Peak one cycle surge current
I
0.6
A
Output
Repetitive peak OFF-state voltage
V
DRM
400
600
V
3
Isolation voltage
V
iso
V
rms
Operating temperature
T
opr
- 30 to + 100
C
Storage temperatrue
T
stg
- 40 to + 125
C
4
Soldering temperature
T
sol
260
C
S
Anode
mark
Model No.
C0.4
Input side
Internal connection
diagram
1
3
4
5
6
1
3
4
5
6
g
Zero-cross
circuit
6
1 Anode
cathode
3 Cathode
4 Anode/
(A)
0
0.2mm or more
Soldering area
2
I
T
2
I
T
1
360
90
180
1
,
2
<=
90
6 Anode/
cathode
(S21MS4 )
For 100V lines
For 200V lines
No built-in
zero-cross circuit
S11MS3
S21MS3
Built-in
zero-cross circuit
-
S21MS4
High Density Surface Mount Type
1. Ultra-compact, mini-flat package type
s
Model Line-ups
5 No external connection
surge
4 For 10 seconds,
: 3 750V
3 750
3 40 to 60% RH, AC for 1 minute
3. High isolation voltage between input and
4. Recognized by UL, file No.E64380
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
Mini-flat Package
Phototriac Coupler
g
Zero-cross circuit for S21MS4
4.4
0.2
1.27
0.25
0.4
0.1
3.6
0.3
2.6
0.2
0.1
0.1
5.3
0.3
0.2
0.05
7.0
+
0.2
-
0.7
0.5
+
0.4
-
0.2
0.6
MAX.
S11MS3/S21MS3/S21MS4
s
Electro-optical Characteristics
(Ta= 25C)
Parameter
Forward voltage
Reverse current
Repetitive peak OFF-state current
ON-state voltage
Holding current
Critical rate of rise of OFF-state voltage
Zero-cross
voltage
S21MS4
Minimum trigger current
Isolation resistance
Turn-on time
S11MS3/S21MS3
S21MS4
Input
Output
Transfer
charac-
teristics
2
V
DRM
= 1/
Rated
Symbol
MIN.
TYP.
MAX.
Unit
V
F
-
1.2
1.4
V
I
R
-
-
10
A
I
DRM
-
-
1
A
V
T
-
-
2.5
V
I
H
0.1
-
3.5
mA
100
-
V/
s
V
OX
-
-
35
V
I
FT
-
-
10
mA
R
ISO
5 x 10
10
10
11
-
t
on
-
-
100
s
-
-
50
V
DRM
= Rated
I
T
= 0.05A
V
D
= 6V
V
D
= 6V, R
L
= 100
V
D
= 6V, R
L
= 100
,
I
F
= 20mA
Conditions
I
F
= 20mA
V
R
= 3V
0
10
-30
0
50
100
20
30
40
50
60
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
T
(
mA
rms
)
Ambient temperature T
a
(C)
- 30
0
0
50
100
10
20
30
40
50
60
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current I
F
(
mA
)
Forward current I
F
(
mA
)
12
10
8
6
4
2
100
80
60
40
20
0
0
-30
(S11MS3/S21MS3)
Ambient temperature T
a
(C)
V
D
= 6V
R
L
= 100
Fig. 3 Forward Current vs.
Forward Voltage
Minimum trigger current I
FT
(
mA
)
Ambient temperature T
a
(C)
RMS ON-state current I
Fig. 4-a Minimum Trigger Current vs.
Ambient Temperature
200
10
5
2
1
0
0.5
1.0
1.5
2.5
3.0
2.0
100
20
50
75C
50C
25C
0C
- 30C
T
a
= 100C
1 000
DC500V, 40 to 60% RH
I
F
= 15mA, Resistance load
dV/dt
Forward voltage V
F
(V)
S11MS3/S21MS3/S21MS4
- 30
0.7
0
20
40
60
80
100
0.8
0.9
1.0
1.1
1.2
1.3
Voltage vs. Ambient Temperature
(S11MS3/S21MS3)
V
DRM
(
T=
T
a
)
/V
DRM
(
T
i
=
25C
)
-
30
0
20
40
60
80
100
0.7
0.8
0.9
1.0
1.1
1.2
1.3
V
DRM
(
T
j
=T
a
)
/V
DRM
(
T
j
=
25C
)
Ambient temperature T
a
(C)
(S21MS4)
0.8
1.0
- 30
0
20
100
1.2
1.4
1.6
1.8
2.0
40
60
80
S21MS4
S11MS3
S21MS3
Ambient Temperature
T
(
V
)
Ambient temperature T
a
(C)
I
T
= 50mA
- 30
0
20
40
60
80
100
0.2
1
0.1
0.5
2
5
10
Holding current I
H
(
mA
)
Ambient temperature T
a
(C)
V
D
= 6V
100
0.1
0.2
0.5
1
2
5
80
60
40
20
0
10
- 30
Ambient temperature T
a
(C)
Holding current I
H
(
mA
)
V
D
= 6V
Ambient temperature T
a
(C)
perature
(S11MS3/S21MS3)
perature
(S21MS4)
Fig. 5-a Relative Repetitive Peak OFF-state
j
Relative repetitive peak OFF-state voltage
Fig. 6 ON-state Voltage vs.
ON-state voltage V
Relative repetitive peak OFF-state voltage
Fig. 5-b Relative Repetitive Peak OFF-state
Voltage vs. Ambient Temperature
Fig. 7-a Holding Current vs. Ambient Tem-
Fig. 7-b Holding Current vs. Ambient Tem-
100
80
60
40
20
0
- 30
14
12
8
6
4
2
0
10
Ambient temperature T
a
( C )
Minimum trigger current I
FT
(
mA
)
Fig. 4-b Minimum Trigger Current vs.
Ambient Temperature
(S21MS4)
V
D
= 6V
R
L
= 100
S11MS3/S21MS3/S21MS4
100
200
300
400
500
600
5
2
5
2
S21MS4
vs. OFF-state Voltage
(S21MS3/S21MS4)
(
A
)
10
- 9
10
- 10
T
a
D
(V)
S21MS3
10
- 10
100
200
300
400
500
600
5
10
- 9
2
5
2
S11MS3
T
a
= 25C
D
(V)
(
A
)
vs. OFF-state Voltage
(S11MS3)
-30
0
100
20
40
60
80
Ambient temperature T
a
(C)
Current vs. Ambient Temperature
I
DRM
(
T
j
=T
a
)/I
RM
(
T
j
=
25C
)
10
2
10
1
10
0
10
- 1
10
- 2
V
DRM
= 400V
100
80
60
40
20
0
-30
30
25
20
15
Zero-cross voltage V
OX
(
V
)
0
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
20
30
40
50
60
70
S11MS3
S21MS3
S21MS4
T
(V)
80
90
100
T
a
= 25C
I
F
= 20mA
ON-state Voltage
T
(
mA
)
Zero-
cross
Circuit
+
V
CC
V
IN
Load
1
6
4
s
Basic Operation Circuit
AC100V
AC200V
Zero-cross Circuit
S11MS3/
S21MS3/S21MS4
3
(S21MS4 )
(S11MS3 )
(S21MS3/S21MS4 )
R load
Ambient temperature T
a
(C)
q
Please refer to the chapter
Temperature
(S21MS4)
Repetitive peak OFF-state current I
OFF-state voltage V
DRM
Fig. 8-a Repetitive Peak OFF-state Current
Fig. 8-b Repetitive Peak OFF-state Current
Repetitive peak OFF-state current I
DRM
OFF-state voltage V
Fig.10 Zero-cross Voltage vs. Ambient
Fig. 9 Relative Repetitive Peak OFF-state
Relative repetitive peak OFF-state current
ON-state current I
ON-state voltage V
Fig.11 ON-state Current vs.
= 25C
I
F
= 15mA
" Precautions for Use." ( Page 78 to 93) .