S12MD1V/S12MD3
S12MD1V/S12MD3
s
Features
1. High RMS ON-state current ( I
T
: MAX.
2. High repetitive peak OFF-state voltage
( V
DRM
: MIN. 400V )
3. Trigger current I
FT
: MAX. 15mA at R
G
=
20k
2. For triggering high power thyristor and
triac
s
Outline Dimensions
(Unit : mm )
1. ON-OFF operation for a low power load
S12MD1V
Internal connection diagram
Anode
mark
S12MD3
Internal connection diagram
S12MD1V
S12MD3
Anode
mark
1
2
3
4
5
6
1
2
3
4
5
6
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate
1
2
3
1
2
3
4
4
5
6
7
8
5
6
7
8
1 4 Anode
2 3 Cathode
5 8 Gate
6 7 Anode/
cathode
4. For half-wave control
S12MD1V
For full-wave control
S12MD3
Photothyristor Coupler
g
S12MD1V
and
S12MD3
are for 100V line
5. Recognized by UL, file No. E64380
s
Applications
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
200mA
rms
)
g Lead forming type ( I type) and taping reel type ( P type) of
S12MD1V
are also available. (
S12MD1VI/S12MDIP
)
:
0 to 13
6.5
0.5
2.54
0.25
0.9
0.2
1.2
0.3
7.12
0.5
7.62
0.3
0.26
0.1
0.5
0.1
0.5
TYP.
3.5
0.5
3.7
0.5
3.35
0.5
:
0 to 13
2.54
0.25
0.8
0.2
0.85
0.3
1.2
0.3
9.22
0.5
3.5
0.5
0.5
TYP.
0.5
0.1
3.0
0.5
0.26
0.1
7.62
0.3
S12MD1V/S12MD3
s
Absolute Maximum Ratings
(Ta = 25C)
s
Electro-optical Characteristics
( Ta = 25C)
2 R
G
= 20k
4 For 10 seconds
Parameter
Symbol
Rating
Unit
S12MD1V
S12MD3
Input
Forward current
I
F
50
mA
Reverse voltage
V
R
6
V
Output
I
T
200
I
surge
2
A
V
DRM
400
V
2
Repetitive peak reverse voltage
V
RRM
400
-
V
3
Isolation voltage
V
iso
Operating temperature
T
opr
- 30 to + 100
C
Storage temperature
T
stg
- 40 to + 125
C
4
Soldering temperature
T
sol
260
C
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 30mA
-
1.2
1.4
V
Reverse current
I
R
V
R
= 3V
-
-
10
- 5
A
Output
I
DRM
V
DRM
= Rated, R
G
= 20k
-
-
10
- 6
A
5
Repetitive peak reverse current
I
RRM
V
RRM
= Rated, R
G
= 20k
-
-
10
- 6
A
V
T
I
T
= 200mA
-
1.0
1.4
V
Holding current
I
H
V
D
= 6V, R
G
= 20k
-
0.3
1
mA
3
-
-
V/
s
Minimum trigger current
I
FT
V
D
= 6V, R
L
= 100
, R
G
= 20k
-
-
15
mA
Isolation resistance
R
ISO
5 x 10
10
10
11
-
Turn-on time
t
on
V
D
= 6V, I
F
= 30mA, R
G
= 20k
,
R
L
= 100
-
s
V
DRM
= 1/
Rated, R
G
= 20k
2
RMS ON-state current
1
Peak one cycle surge current
2
Repetitive peak OFF-state voltage
Repetitive peak OFF-state current
ON-state voltage
Critical rate of rise of OFF-state voltage
5 Applies only to
S12MD1V
Transfer-
charac-
teristics
- 30
0
20
40
60
80
100
0
T
Ambient temperature T
a
(C)
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
- 30
0
25
50
75
100
125
0
10
20
30
40
50
60
70
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
10
60
RMS ON-state current I
(mA
rms
)
100
200
1 50Hz, sine wave
3 40 to 60% RH, AC for 1 minute
DC500V, 40 to 60% RH
mA
rms
V
rms
5 000
1 500
dV/dt
S12MD1V
S12MD3
S12MD1V/S12MD3
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
5
10
20
50
100
200
500
50C
25C
0C
- 25C
Fig. 3 Forward Current vs. Forward Voltage
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
T
a
= 75C
- 30
0
20
40
60
80
100
0
1
2
3
4
20k
50k
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
Minimum trigger current I
FT
(
mA
)
Ambient temperature T
a
(C)
V
D
= 6V
R
L
= 100
5
6
1
2
5
10
20
50
100
200
1
2
5
10
20
50
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
Minimum trigger current I
FT
(
mA
)
Gate resistance R
G
( K
)
- 30
0
20
40
60
80
100
0
100
200
300
400
500
600
20k
50k
100k
Fig. 6 Break Over Voltage vs.
Break over voltage V
BO
(
V
)
Ambient temperature T
a
(C)
R
G
= 10k
0
20
40
60
80
100
0.01
0.02
0.05
0.1
0.2
0.5
1.0
20k
50k
Fig. 8 Holding Current vs.
Ambient Temperature
Holding current I
H
(
mA
)
Ambient temperature T
a
(C)
V
D
= 6V
R
G
= 10k
0
20
40
60
80
100
1
2
5
10
20
50
100
20k
50k
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
Ambient temperature T
a
(C)
R
G
= 10k
2
DRM
= 1/
Rated
V
D
= 6V
R
L
= 100
T
a
= 25C
Critical rate of rise of OFF-state voltage
Ambient Temperature
R
G
= 10k
V
dV/dt
(V/
s
)
S12MD1V/S12MD3
0
20
40
60
80
100
5
5
5
5
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient temperature T
a
(C)
5
3
2
1
6
5
4
3
2
1
6
5
4
+
V
CC
V
IN
+
V
CC
V
IN
C
G
R
G
Z
S
Load
Z
S
:
Snubber circuit
AC 100V
C
G
R
G
Load
AC 100V
s
Basic Operation Circuit
q
S12MD1V
V
DRM
= Rated
R
G
= 20k
10
- 4
10
- 5
10
- 6
10
- 7
10
- 8
10
- 9
Ambient Temperature
Repetitive peak OFF-state current I
DRM
(A
)
Medium/High Power Thyristor Drive Circuit
Medium/High Power Triac Drive Circuit (Zero-cross Operation)
S12MD1V/S12MD3
q
S12MD3
Low Power Load Drive Circuit
+
V
CC
V
IN
+
V
CC
V
IN
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
R
G
C
G
R
G
C
G
Z
S
Load
AC 100V
Z
S
:
Snubber circuit
R
G
C
G
R
G
C
G
AC 100V
Load
Medium/High Power Triac Drive Circuit
q
Please refer to the chapter " Precautions for Use" ( Page 78 to 93) .
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