S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
Low Input Driving Type
Phototriac Coupler
s
Features
s
Applications
1. For triggering medium/high power triacs
3 For 10 seconds
s
Outline Dimensions
( Unit : mm)
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
s
Absolute Maximum Ratings
( Ta = 25C)
100V line
200V line
No zero-cross
circuit
S11MD7T/
S11MD9T
S21MD7T/
S21MD9T
Built-in zero-
cross circuit
S11MD8T
S21MD8T
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
Reverse voltage
V
R
6
V
Output
RMS ON-state current
I
T
0.1
1
Peak one cycle surge current
I
surge
1.2
A
Repetitive peak OFF-state voltage
V
DRM
400
600
V
2
Isolation voltage
V
iso
Operating temperature
T
opr
- 30 to +100
C
Storage temperture
T
stg
- 55 to +125
C
3
Soldering temperature
T
sol
260
C
S11MD8T
1
2
3
4
6
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
6 Anode/
Cathode
Internal connection
diagram
Anode
mark
1
2
3
4
6
g
Zero-cross
circuit
1. Low input driving current
2. Pin No. 5 completely molded for external
noise resistance
( V
iso
rms
)
3. Built-in zero-cross circuit
S11MD7T/S11MD8T
S11MD9T
S21MD7T/S21MD8T/
S21MD9T
I
FT
: MAX. 5mA
S11MD9T /S21MD9T
I
FT
: MAX.7mA )
(
S11MD7T
/
S11MD8T
/
S21MD7T
/
S21MD8T
s
Model Line-ups
4. High repetitive peak OFF-state voltage
(
S11MD7T
/
S11MD8T
/
S11MD9T
V
DRM
: MIN. 400V
S21MD7T
/
S21MD8T
/
S21MD9T
V
DRM
: MIN. 600V
1 50Hz Sine wave
g DIN-VDE0884 approved type is also available.
: 5 000V
5 000
2 40 to 60% RH, AC for 1 minute, f = 60Hz
(S11MD8T/S21MD8T)
5. Isolation voltage between input and output
6. Recognized by UL, file No.E64380
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
A
rms
V
rms
g Taping reel type of
S21MD8T
is also available (
S21MD8P
)
Zero-cross circuit for S11MD8T and S21MD8T
:
0 to 13
6.5
0.5
0.9
0.2
1.2
0.3
2.54
0.25
7.12
0.5
7.62
0.3
0.26
0.1
0.5
0.1
0.5
TYP.
3.5
0.5
3.7
0.5
3.35
0.5
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
-30
0
20
40
60
80
100
0
0.05
0.10
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
RMS ON-state current I
T
Ambient temperature T
a
(C)
-30
0
25
50
75
100
125
0
10
20
30
40
50
60
70
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
(Arms
)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 20mA
-
1.2
1.4
V
Reverse current
I
R
R
= 3V
V
-
-
10
- 5
A
Output
Repetitive peak OFF-state current
I
DRM
V
DRM
= Rated
-
-
10
- 6
A
ON-state voltage
S11MD7T/S21MD7T
S11MD9T/S21MD9T
V
T
I
T
= 0.1A
-
1.5
2.5
V
S11MD8T/S21MD8T
-
1.7
2.5
Holding current
I
H
V
D
= 6V
0.1
0.5
3.5
mA
Critical rate of rise of OFF-state voltage
2
V
DRM
= 1/
Rated
100
-
-
V/
s
Zere-cross voltage
S11MD8T/S21MD8T
V
OX
F
= 10mA
Resistance load, I
-
-
35
V
Transfer
charac-
teristics
Minimum trigger
current
S11MD7T/S21MD7T
S11MD8T/S21MD8T
I
FT
V
D
= 6V, R
L
= 100
-
-
5
mA
-
-
7
S11MD9T/S21MD9T
Isolation resistance
R
ISO
DC500V, 40 to 60% RH
5 x 10
10
10
11
-
Turn-on time
S11MD7T
t
on
V
D
= 6V, R
L
= 100
I
F
= 20mA
-
70
100
s
-
60
100
S11MD9T/S21MD7T/
S21MD9T
-
20
50
S11MD8T/S21MD8T
s
Electro-optical Characteristics
( Ta = 25C)
dV/dt
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
500
200
10
5
2
1
0
0.5
1.0
1.5
2.5
3.0
2.0
75C
- 30C
50C
100
20
50
0C
25C
Fig. 3 Forward Current vs. Forward Voltage
Forward current I
F
(
mA
)
10
8
6
4
2
100
80
60
40
20
0
0
-30
12
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
- 30
0.7
0
20
40
60
80
100
0.8
0.9
1.0
1.1
1.2
1.3
Fig. 5 Relative Repetitive Peak OFF-State
Voltage vs. Ambient Temperature
V
DRM
(
T=
T
a
)
/V
DRM
(
T
=
25C
)
S11MD8T/S21MD8T
S11MD7T/S21MD7T
S11MD9T/S21MD9T
1.3
1.4
-30
0
20
100
1.5
1.6
1.7
1.8
1.9
40
60
80
S21MD8T
S11MD8T
S11MD7T/S21MD7T
S11MD9T/S21MD9T
Fig. 6 ON-state Voltage vs. Ambient
Temperature
Ambient temperature T
a
(C)
T
(
V
)
- 30
100
0.1
0.2
0.5
1
2
5
10
80
60
40
20
0
S11MD8T/S21MD8T
S11MD7T/S21MD7T
S11MD9T/S21MD9T
Ambient temperature T
a
(C)
Holding current I
H
(
mA
)
2
10
-9
5
2
-10
5
100
200
300
400
500
600
vs. OFF-state Voltage
DRM
(
A
)
D
(V)
Fig. 7 Holding Current vs.
Ambient Temperature
FT
(
mA
)
Ambient temperature T
a
(C)
Ambient temperature T
a
(C)
(S11MD7T/S11MD9T)
Forward voltage V
F
(V)
Minimum trigger current I
S11MD9T/S21MD9T
S11MD8T/S21MD8T
S11MD7T/S21MD7T
Relative repetitive peak OFF-state voltage
jj
Repetitive peak OFF-state current I
OFF-state voltage V
Fig. 8-a Repetitive Peak OFF-state Current
T
a
= 100C
R
L
= 100
V
D
= 6V
I
T
= 100mA
V
D
= 6V
T
a
= 25C
ON-state voltage V
10
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
S11MD8T
S21MD8T
5
2
5
100
200
300
400
500
600
vs. OFF-state Voltage
(S11MD8T/S21MD8T)
(
A
)
2
100
200
300
400
500
600
5
2
5
vs. OFF-state Voltage
10
- 9
10
- 10
10
- 11
- 30
0
100
10
- 7
20
40
60
80
10
- 12
10
- 8
10
- 9
10
- 10
10
- 11
vs. Ambient Temperature
Ambient temperature T
a
(C)
V
D
= 400V (
S11MD7T/S11MD9T
)
V
D
= 600V (
S21MD7T/S21MD9T
)
(S11MD7T/S11MD9T/S21MD7T/S21MD9T)
-30
0
100
10
- 4
20
40
60
80
10
- 9
10
- 5
10
- 6
10
- 7
10
- 8
vs. Ambient Temperature
(S11MD8T/S21MD8T)
Ambient temperature T
a
(C)
V
D
= 400V
(S11MD8T )
V
D
= 600V
(S21MD8T )
-30
0
20
40
60
80
100
15
20
25
Zero-cross voltage V
OX
(
V
)
Ambient temperature T
a
(C)
Fig.10 Zero-cross Voltage vs.
(S11MD8T/S21MD8T )
50
20
20
30
10
200
100
50
Turn-on time t
on
(
s
)
DRM
(
A
)
Off-state voltage V
D
(V)
T
a
=25C
R load
I
F
V
D
= 6V
R
L
= 100
Forward current I
F
( mA )
Fig. 8-b Repetitive Peak OFF-state Current
10
- 8
10
- 7
DRM
Repetitive peak OFF-state current I
Repetitive peak OFF-state current I
(
A
)
DRM
OFF-stage voltage V
D
(V)
(S21MD7T/S21MD9T)
Fig. 9-a Repetitive Peak OFF-state Current
Fig. 9-b Repetitive Peak OFF-state Current
Fig. 8-c Repetitive Peak OFF-state Current
Repetitive peak OFF-state current I
DRM
(A
)
Repetitive peak OFF-state current I
(S11MD7T )
Ambient Temperature
= 10mA
2
T
a
= 25C
Fig.11-a Turn-on Time vs. Forward Current
5
S11MD8T
S21MD8T
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
50
10
20
10
100
50
20
(S11MD8T/S21MD8T )
Turn-on time t
on
(
s
)
50
20
20
30
10
200
100
50
(S11MD9T/S21MD7T/S21MD9T )
V
D
= 6V
R
L
= 100
Turn-on time t
on
(
s
)
0
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
20
30
40
50
60
70
80
90
100
S21MD9T
S11MD9T
S21MD7T
S11MD7T
T
(
mA
)
T
(V)
I
F
= 20mA
T
a
= 25C
0
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
20
30
40
50
60
70
80
90
100
S21MD8T
S11MD8T
T
(
mA
)
T
(V)
Zero-
cross
+
V
CC
V
IN
Load
1
2
6
4
s
Basic Operation Circuit
S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
AC100V
(S11MD7T/S11MD8T/S11MD9T)
AC200V
(S21MD7T/S21MD8T/S21MD9T)
Zero-cross Circuit
( S11MD8T/S21MD8T )
Forward current I
F
( mA)
V
D
= 6V
R
L
= 100
I
F
= 20mA
T
a
= 25C
ON-state Voltage
Forward current I
F
( mA )
Fig.11-b Turn-on Time vs. Forward Current
Fig.11-c Turn-on Time vs. Forward Current
Fig.12-a ON-state Current vs.
ON-state current I
ON-state voltage V
(S11MD7T/S21MD7T/S11MD9T/S21MD9T)
ON-state current I
Fig.12-b ON-state Current vs.
(S11MD8T/S21MD8T )
ON-state voltage V
circuit
ON-state Voltage
q
Please refer to the chapter " Precautions for Use."
5
5
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