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Электронный компонент: S22MD2

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S22MD2
S22MD2
Photothyristor Coupler
s
Features
s
Absolute Maximum Ratings
( Ta = 25C)
1 50Hz, sine wave
2 R
G
= 20k
4 For 10 seconds
s
Outline Dimensions
( Unit : mm)
( V
DRM
: MIN. 600V )
3. Low trigger current ( I
FT
: MAX. 8mA
at R
G
= 20k
)
4. High isolation voltage between input and
5.08mm
of photothyristor on the output side :
1. ON-OFF operation for a low power load
2. For triggering high power thyristor and
triac
output ( V
iso
* S22MD2 is for 200V line.
Symbol
Rating
Unit
I
F
50
mA
V
R
6
V
I
T
200
I
surge
2
A
V
DRM
600
V
V
RRM
600
V
V
iso
T
opr
- 30 to + 100
C
T
stg
- 40 to + 125
C
T
sol
260
C
S22MD2
Anode mark
Internal connection
diagram
1 4 NC
2
Anode
3
Cathode
5 Gate
6 Cathode
7 Anode
1
2
3
4
5
6
7
1
2
3
4
5
6
7
Parameter
Input
Forward current
Reverse voltage
Output
RMS ON-state current
1
Peak one cycle surge current
2
Repetitive peak OFF-state voltage
2
3
Isolation voltage
Operating temperature
Storage temperature
4
Soldering temperature
1. Long distance between anode and cathode
2. High repetitive peak OFF-state voltage
Repetitive peak reverse voltage
5 000
3 40 to 60% RH, AC for 1 minute
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
: 5 000V
rms )
V
rms
mA
rms
:
0 to 13
6.5
0.5
5.08
0.25
2.54
0.25
0.85
0.2
1.2
0.3
0.8
0.2
9.22
0.5
3.5
0.5
0.5
TYP.
0.5
0.1
3.0
0.5
0.26
0.1
7.62
0.3
s
Applications
S22MD2
s
Electro-optical Characteristics
( Ta = 25C)
- 30
0
20
40
60
80
100
0
T
Ambient temperature T
a
(C)
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
- 30
0
25
50
75
100
125
0
10
20
30
40
50
60
70
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current I
F
(
mA
)
Ambient temperature T
a
(C)
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
5
10
20
50
100
200
500
Fig. 3 Forward Current vs. Forward Voltage
Forward current I
F
(
mA
)
Forward voltage V
F
(V)
- 30
0
20
40
60
80
100
0
2
4
6
8
10
12
20k
50k
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
R
G
= 10k
Ambient temperature T
a
(C)
Minimum trigger current I
FT
(
mA
)
V
D
= 6V
R
L
= 100
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
F
I
F
= 30mA
-
1.2
1.4
V
R
V
R
-
-
10
A
DRM
V
DRM
= Rated, R
G
= 20k
-
-
10
-6
A
RRM
V
RRM
= Rated, R
G
= 20k
-
-
10
-6
A
V
T
I
T
= 200mA
-
1.0
1.4
V
H
V
D
= 6V, R
G
= 20k
-
0.3
1
mA
2
V
DRM
= 1/ Rated, R
G
= 20k
3
-
-
V/
s
FT
V
D
= 6V, R
L
= 100
, R
G
= 20k
-
6
8
mA
ISO
5x 10
10
10
11
-
on
V
D
= 6V, R
G
= 20k
, R
L
F
=
30mA
-
20
50
s
Parameter
Input
Forward voltage
Reverse current
Output
Repetitive peak OFF-state current
ON-state voltage
Holding current
Transfer-
charac-
teristics
Minimum trigger current
Isolation resistance
Turn-on time
I
I
I
I
I
R
t
-5
= 100
, I
= 4V
rms
)
(
mA
RMS ON-state current I
100
200
Repetitive peak reverse current
Critical rate of rise of OFF-state voltage
DC500V, 40 to 60% RH
50C
25C
0C
- 25C
T
a
= 75C
dV/dt
S22MD2
1
2
5
10
20
50
100
200
1
2
5
10
20
50
100
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
Minimum trigger current I
FT
(
mA
)
Gate resistance R
G
V
D
= 6V
R
L
= 100
T
a
= 25C
- 30 - 20
0
20
40
60
80
100 120
0
100
200
300
400
500
600
700
800
900
20k
Fig. 6 Break Over Voltage vs.
Break over voltage V
BO
(
V
)
Ambient temperature T
a
(C)
R
G
= 10k
0
20
40
60
80
100
1
2
5
10
20
50
100
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
Ambient temperature T
a
(C)
R
G
= 20k
V
DRM
= 1/ Rated
2
- 30
0
20
40
60
80
100
0.01
0.02
0.05
0.1
0.2
0.5
1
20k
50k
Fig. 8 Holding Current vs.
Ambient Temperature
Holding current I
H
(
mA
)
Ambient temperature T
a
(C)
V
D
= 6V
R
G
= 10k
0
20
40
60
80
100
2
5
2
5
2
5
Fig. 9 Repetitive Peak OFF-state Current vs.
DRM
(
A
)
Ambient temperature T
a
(C)
V
DRM
= Rated
R
G
= 20k
2
5
10
- 6
10
- 7
10
- 8
( k
)
Critical rate of rise of OFF-state voltage
Ambient Temperature
Repetitive peak OFF-state current I
Ambient Temperature
50k
dV/dt
(
V/
s
)
S22MD2
2
1
+
V
CC
V
IN
C
G
R
G
Z
S
Load
Z
S
:
Snubber circuit
s
Basic Operation Circuit
AC 100V, 200V
5
6
7
2
1
+
V
CC
V
IN
C
G
R
G
Load
AC 100V, 200V
5
6
7
Medium/High Power Thyristor Drive Circuit
Medium/High Power Triac Drive Circuit (Zero-cross Operation)
4
3
4
3
q
Please refer to the chapter " Precautions for Use" ( Page 78 to 93) .