Электронный компонент: 2SC4584

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

OUTLINE DIMENSIONS

Unit : mm

Case : ITO-3P

HFX Series

Switching Power Transistor

6A NPN

2SC4584

(TP6W80HFX)

Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

-55150

Junction Temperature

Tj

150

Collector to Base Voltage

V

CBO

1200

V

Collector to Emitter Voltage

V

CEO

800

V

Emitter to Base Voltage

V

EBO

7

V

Collector Current DC

I

C

6

A

Collector Current Peak

I

CP

12

Base Current DC

I

B

3

A

Base Current Peak

I

BP

6

Total Transistor Dissipation

P

T

Tc = 25

65

W

Dielectric Strength

Vdis

Terminals to case, AC 1 minute

2

kV

Mounting Torque

TOR

(Recommended torque : 0.5Nm)

0.8

Nm

Electrical Characteristics (Tc=25)

Item

Symbol

Conditions

Ratings

Unit

Collector to Emitter Sustaining Voltage

V

CEO

(sus)

I

C

= 0.2A

Min 800

V

Collector Cutoff Current

I

CBO

At rated Voltage

Max 0.1

mA

I

CEO

Max 0.1

Emitter Cutoff Current

I

EBO

At rated Voltage

Max 0.1

mA

DC Current Gain

h

FE

V

CE

= 5V, I

C

= 3A

Min 8

h

FEL

V

CE

= 5V, I

C

= 1mA

Min 7

Collector to Emitter Saturation Voltage

V

CE

(sat)

I

C

= 3A

Max 1.0

V

Base to Emitter Saturation Voltage

V

BE

(sat)

I

B

= 0.6A

Max 1.5

V

Thermal Resistance

jc

Junction to case

Max 1.92

/W

Transition Frequency

f

T

V

CE

= 10V, I

C

= 0.6A

TYP 8

MHz

Turn on Time

ton

I

C

= 3A

Max 0.5

Storage Time

ts

I

B1

= 0.6A, I

B2

= 1.2A

Max 3.5

s

Fall Time

tf

R

L

= 85, V

BB2

= 4V

Max 0.3

1

10

100

2SC4584

0.001

0.01

0.1

1

10

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

V

CE

= 5V

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

Tc = 150

�

C

100

�

C

50

�

C

25

�

C

0

�

C

-

25

�

C

-

55

�

C

h

FE

- I

C

12

Collector Current I

C

[A]

DC Current Gain h

FE

0

0.5

1

1.5

2

2.5

3

2SC4584

0.01

0.1

1

0

0.5

1

1.5

2

2.5

3

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

I

C

= 0.75A

1.5A

3.0A

6.0A

9.0A

12A

Tc = 25

�

C

Saturation Voltage

I

C

= 0.75A

1.5A

3.0A

6.0A

9.0A

6

Base Current I

B

[A]

Collector-Emitter Voltage V

CE

[V]

Base-Emitter Voltage V

BE

[V]

0.01

0.1

1

10

0

1

2

3

4

5

6

2SC4584

I

B1

= 0.2I

C

I

B2

= 0.4I

C

V

BB2

= 4V

V

CC

= 250V

Tc = 25

�

C

t

s

t

on

t

f

Switching Time - I

C

Collector Current I

C

[A]

Switching Time t

SW

[

�

s]

0.01

0.1

1

10

0

50

100

150

200

250

300

2SC4584

I

C

= 3A

I

B1

= 0.6A

I

B2

= 1.2A

V

BB2

= 4V

Tc = 25

�

C

t

s

t

on

t

f

Switching Time - V

CC

Collector Voltage V

CC

[V]

Switching Time t

SW

[

�

s]

0.01

0.1

1

10

0

50

100

150

2SC4584

I

C

= 3A

I

B1

= 0.6A

I

B2

= 1.2A

V

BB2

= 4V

R

L

= 85

t

s

t

on

t

f

Switching Time - Tc

Case Temperature Tc [

�

C]

Switching Time t

SW

[

�

s]

Transient Thermal Impedance

0.001

0.01

0.1

1

10

2SC4584

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

Time t [s]

Transient Thermal Impedance

jc(t) [

�

C/W]

Forward Bias SOA

0.01

0.1

1

10

1

10

100

2SC4584

50

�

s

Tc = 25

�

C

Single Pulse

150

�

s

1ms

10ms

DC

12

800

Collector-Emitter Voltage V

CE

[V]

Collector Current I

C

[A]

P

T

limit

I

S/B

limit

0

20

40

60

80

100

0

50

100

150

2SC4584

Collector Current Derating

Collector Current Derating [%]

V

CE

= fixed

P

T

limit

I

S/B

limit

Case Temperature Tc [

�

C]

0

2

4

6

8

10

12

0

200

400

600

800

1000

1200

2SC4584

I

B1

= 0.25I

C

I

B2

= 0.9A

V

BB2

= 5V

Tc < 150

�

C

Reverse Bias SOA

Collector-Emitter Voltage V

CE

[V]

Collector Current I

C

[A]