Электронный компонент: 2SD1791

Скачать:

PDF

ZIP

Unit : mm

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

OUTLINE DIMENSIONS

Case : ITO-220

Darlington Transistor

7A NPN

2SD1791

(TP7L10)

Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

-55+150

Junction Temperature

Tj

+150

Collector to Base Voltage

V

CBO

100

V

Collector to Emitter Voltage

V

CEO

100

V

Emitter to Base Voltage

V

EBO

7

V

Collector Current DC

I

C

7

A

Collector Current Peak

I

CP

10

A

Base Current DC

I

B

0.5

A

Base Current Peak

I

BP

1.0

A

Total Transistor Dissipation

P

T

Tc = 25

30

W

Dielectric Strength

Vdis

Terminals to case AC 1 minute

2

kV

Mounting Torque

TOR

(Recommended torque : 0.3Nm

0.5

Nm

Electrical Characteristics (Tc=25)

Item

Symbol

Conditions

Ratings

Unit

Collector Cutoff Current

I

CBO

V

CB

= 100V

Max 0.1

mA

I

CEO

V

CE

= 100V

Max 0.1

Emitter Cutoff Current

I

EBO

V

EB

= 7V

Max 5

mA

DC Current Gain

h

FE

V

CE

= 3V, I

C

= 3A

Min 1,500

Max 30,000

Collector to Emitter Saturation Voltage

V

CE

(sat)

I

C

= 3A

Max 1.5

V

Base to Emitter Saturation Voltage

V

BE

(sat)

I

B

= 5mA

Max 2.0

V

Thermal Resistance

jc

Junction to case

Max 4.17

/W

Transition Frequency

f

T

V

CE

= 10V, I

C

= 0.7A

TYP 20

MHz

Turn on Time

ton

Max 2

I

C

= 3A

Storage Time

ts

I

B1

= I

B2

= 5mA

Max 12

s

R

L

= 10

Fall Time

tf

V

BB2

= 4V

Max 5

100

1000

10000

2SD1791

0.1

1

10

V

CE

= 3V

h

FE

- I

C

Tc = 150

�

C

100

�

C

50

�

C

25

�

C

0

�

C

-

25

�

C

-

55

�

C

Collector Current I

C

[A]

DC Current Gain h

FE

0

0.5

1

1.5

2

2.5

3

2SD1791

0.1

1

10

100

1000

0

0.5

1

1.5

2

2.5

3

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

I

C

=

0.5A

1A

5A

7A

10A

Tc = 25

�

C

Saturation Voltage

3A

I

C

=

0.5A

1A

5A

7A

10A

3A

Base Current I

B

[mA]

Collector-Emitter Voltage V

CE

[V]

Base-Emitter Voltage V

BE

[V]

0.1

1

10

0

1

2

3

4

5

6

7

2SD1791

I

B1

= 0.001I

C

I

B2

= 0.001I

C

V

BB2

= 4V

V

CC

= 50V

Tc = 25

�

C

t

s

t

on

t

f

Switching Time - I

C

Collector Current I

C

[A]

Switching Time t

SW

[

�

s]

0.1

1

10

0

50

100

150

2SD1791

I

C

= 3A

I

B1

= 3mA

I

B2

= 3mA

V

BB2

= 4V

V

CC

= 50V

t

s

t

on

t

f

Switching Time - Tc

Case Temperature Tc [

�

C]

Switching Time t

SW

[

�

s]

Transient Thermal Impedance

0.01

0.1

1

10

2SD1791

10

2

10

3

10

4

10

5

10

6

10

7

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

Time t [

�

s]

Transient Thermal Impedance

jc(t) [

�

C/W]

Forward Bias SOA

0.01

0.1

1

10

1

10

100

2SD1791

Tc = 25

�

C

Single Pulse

250

�

s

1ms

10ms

DC

Collector-Emitter Voltage V

CE

[V]

Collector Current I

C

[A]

P

T

limit

I

S/B

limit

0

20

40

60

80

100

0

50

100

150

2SD1791

Collector Current Derating

Collector Current Derating [%]

V

CE

= fixed

P

T

limit

I

S/B

limit

Case Temperature Tc [

�

C]

0

2

4

6

8

10

0

20

40

60

80

100

2SD1791

I

B1

= 0.002I

C

I

B2

= 0.004I

C

V

BB2

= 4V

Tc = 25

�

C

Reverse Bias SOA

Collector-Emitter Voltage V

CE

[V]

Collector Current I

C

[A]