ChipFind - документация

Электронный компонент: 2SK1195

Скачать:  PDF   ZIP
SHINDENGEN
2SK1195
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
( F1E23 )
230V 1.5A
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
Case : E-pack
VR Series Power MOSFET
N-Channel Enhancement type
DC/DC converters
Power supplies of DC 12-24V input
Product related to
Integrated Service Digital Network
APPLICATION
Applicable to 4V drive.
The static Rds(on) is small.
Built-in ZD for Gate Protection.
FEATURES
Absolute Maximum Ratings
Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
230
V
Gate-Source Voltage
V
GSS
20
Continuous Drain Current
DC
I
D
1.5
Continuous Drain Current
Peak)
I
DP
3
A
Continuous Source Current
DC
I
S
1.5
Total Power Dissipation
P
T
10
W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK1195 ( F1E23 )
VR Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbole
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 250A, V
GS
= 0V
230
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 230V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 1.5A, V
DS
= 10V
0.7
1.4
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 1.5A, V
GS
= 10V
1.2
2
Gate Threshold Voltage
V
TH
I
D
= 0.2mA, V
DS
= 10V
2
3
4
V
Source-Drain Diode Forward Voltage
V
SD
I
S
= 1.5A, V
GS
= 0V
1.5
Thermal Resistance
jc
junction to case
12.5 /
Total Gate Charge
Qg
VGS = 10V, I
D
= 1.5A, V
DD
= 200V
6.9
nC
Input Capacitance
C
iss
160
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
20
pF
Output Capacitance
C
oss
90
Turn-On Time
t
on
I
D
= 1.5A, V
GS
= 10V, R
L
= 67
37
75
ns
Turn-Off Time
t
off
50
100
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
2SK1195
Transfer Characteristics
V
DS
= 10V
pulse test
TYP
Tc =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
0.1
1
10
-50
0
50
100
150
2SK1195
V
GS
= 10V
pulse test
TYP
I
D
= 1.5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
-50
0
50
100
150
2SK1195
V
DS
= 10V
I
D
= 0.2mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]