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Электронный компонент: 2SK2177

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SHINDENGEN
2SK2177
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(F1E50VX2)
500V 1A
Case : E-pack
Case : E-pack
VX-2 Series Power MOSFET
N-Channel Enhancement type
(Unit : mm)
Switching power supply of AC 100V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings
Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
30
Continuous Drain Current
DC
I
D
1
Continuous Drain Current
Peak)
I
DP
3
A
Continuous Source Current
DC
I
S
1
Total Power Dissipation
P
T
10
W
Single Pulse Avalanche Current
I
AS
T
ch
= 25
1
A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2177 ( F1E50VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
500
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 0.5A, V
DS
= 10V
0.3
0.7
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 0.5A, V
GS
= 10V
5.8
7.0
Gate Threshold Voltage
V
TH
I
D
= 0.3mA, V
DS
= 10V
2.5
3.0
3.5
V
Source-Drain Diode Forwade Voltage
V
SD
I
S
= 0.5A, V
GS
= 0V
1.5
Themal Resistance
jc
junction to case
12.5 /
Total Gate Charge
Q
g
V
DD
= 400V, V
GS
= 10V, I
D
= 1A
6
nC
Input Capacitance
C
iss
140
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
13
pF
Output Capacitance
C
oss
45
Turn-On Time
t
on
I
D
= 0.5A, V
GS
= 10V, R
L
= 300
35
70
ns
Turn-Off Time
t
off
60
100
Static Drain-Source On-state Resistance
0.1
1
10
100
-50
0
50
100
150
2SK2177
V
GS
= 10V
pulse test
TYP
I
D
= 0.5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50
0
50
100
150
2SK2177
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]
Transient Thermal Impedance
0.01
0.1
1
10
100
2SK2177
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Time t [s]
Transient Thermal Impedance
jc(t) [
C/W]
0
20
40
60
80
100
0
50
100
150
2SK2177
Power Derating
Power Derating [%]
Case Temperature Tc [
C]