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Электронный компонент: 2SK2194

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SHINDENGEN
2SK2194
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(F15W50VX2)
500V 15A
Case : E-pack
VX-2 Series Power MOSFET
N-Channel Enhancement type
(Unit : mm)
Case : MTO-3P
Switching power supply of AC 100V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
30
Continuous Drain CurrentDC
I
D
15
Continuous Drain CurrentPeak)
I
DP
45
A
Continuous Source CurrentDC
I
S
15
Total Power Dissipation
P
T
110
W
Single Pulse Avalanche Current
I
AS
T
ch
= 25
15
A
Mounting Torque
TOR
Recommended torque : 0.5Nm
0.8
Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2194 ( F15W50VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
500
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 7.5A, V
DS
= 10V
4.5
10
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 7.5A, V
GS
= 10V
0.35
0.45
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3.0
3.5
V
Source-Drain Diode Forwade Voltage
V
SD
I
S
= 7.5A, V
GS
= 0V
1.5
Themal Resistance
jc
junction to case
1.13 /
Total Gate Charge
Q
g
V
DD
= 400V, V
GS
= 10V, I
D
= 15A
65
nC
Input Capacitance
C
iss
1900
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
135
pF
Output Capacitance
C
oss
400
Turn-On Time
t
on
I
D
= 7.5A, V
GS
= 10V, R
L
= 20
110
180
ns
Turn-Off Time
t
off
270
440
0
5
10
15
20
25
30
0
5
10
15
20
2SK2194
Transfer Characteristics
V
DS
= 25V
pulse test
TYP
Tc =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
0.1
1
-50
0
50
100
150
2SK2194
V
GS
= 10V
pulse test
TYP
I
D
= 7.5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
-50
0
50
100
150
2SK2194
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]
Safe Operating Area
0.01
0.1
1
10
100
1
10
100
1000
2SK2194
100
s
Tc = 25
C
Single Pulse
200
s
1ms
10ms
DC
Drain-Source Voltage V
DS
[V]
Drain Current I
D
[A]
R
DS(ON)
limit
0.01
0.1
1
10
100
2SK2194
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Transient Thermal Impedance
Time t [s]
Transient Thermal Impedance
jc(t) [
C/W]
Capacitance
10
100
1000
10000
0
20
40
60
80
100
2SK2194
0.005
Tc=25
C
TYP
Ciss
Coss
Crss
Drain-Source Voltage V
DS
[V]
Capacitance Ciss Coss Crss [pF]
0
20
40
60
80
100
0
50
100
150
2SK2194
Power Derating
Power Derating [%]
Case Temperature Tc [
C]
0
100
200
300
400
500
0
20
40
60
80
100
2SK2194
0
5
10
15
20
200V
Gate Charge Characteristics
I
D
= 15A
100V
V
DD
= 400V
V
GS
V
DS
Gate Charge Qg [nC]
Drain-Source Voltage V
DS
[V]
Gate-Source Voltage V
GS
[V]