ChipFind - документация

Электронный компонент: 2SK2490

Скачать:  PDF   ZIP
SHINDENGEN
2SK2490
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
( F10F18VZ )
180V 10A
N-Channel Enhancement type
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
VZ Series Power MOSFET
Case : FTO-220
DC/DC converters
Power supplies of DC 12-24V input
Product related to
Integrated Service Digital Network
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings
Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
180
V
Gate-Source Voltage
V
GSS
30
Continuous Drain Current
DC
I
D
10
Continuous Drain Current
Peak)
I
DP
20
A
Continuous Source Current
DC
I
S
10
Total Power Dissipation
P
T
40
W
Single Pulse Avalanche Current
I
AS
T
ch
= 25
10
A
Dielectric Strength
V
dis
Terminals to case,AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque
0.3 Nm
0.5
Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2490 ( F10F18VZ )
VZ Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
180
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 180V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 5A, V
DS
= 10V
3.0
7.0
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 5A, V
GS
= 10V
0.17
0.25
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.0
3.0
4.0
V
Source-Drain Diode Forward Voltage
V
SD
I
S
= 5A, V
GS
= 0V
1.5
Thermal Resistance
jc
junction to case
3.12 /
Total Gate Charge
Q
g
V
DD
= 150V, V
GS
= 10V, I
D
= 10A
25
nC
Input Capacitance
C
iss
720
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
80
pF
Output Capacitance
C
oss
280
Turn-On Time
t
on
I
D
= 5A, V
GS
= 10V, R
L
= 20
50
100
ns
Turn-Off Time
t
off
140
280
0
5
10
15
20
0
5
10
15
20
2SK2490
Transfer Characteristics
V
DS
= 10V
pulse test
TYP
Tc =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
10
100
1000
-50
0
50
100
150
2SK2490
V
GS
= 10V
pulse test
TYP
I
D
= 5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[m
]
Gate Threshold Voltage
0
1
2
3
4
5
-50
0
50
100
150
2SK2490
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]
Safe Operating Area
0.1
1
10
100
1
10
100
2SK2490
100
s
Tc = 25
C
Single Pulse
200
s
1ms
10ms
DC
Drain-Source Voltage V
DS
[V]
Drain Current I
D
[A]
R
DS(ON)
limit
0.001
0.01
0.1
1
10
2SK2490
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Transient Thermal Impedance
Time t [s]
Transient Thermal Impedance
jc(t) [
C/W]
Capacitance
10
100
1000
10000
0
20
40
60
80
100
2SK2490
0.005
Tc=25
C
TYP
Ciss
Coss
Crss
Drain-Source Voltage V
DS
[V]
Capacitance Ciss Coss Crss [pF]
0
20
40
60
80
100
0
50
100
150
2SK2490
Power Derating
Power Derating [%]
Case Temperature Tc [
C]
0
50
100
150
200
0
10
20
30
40
50
2SK2490
0
5
10
15
20
100V
Gate Charge Characteristics
I
D
= 10A
50V
V
DD
= 150V
V
GS
V
DS
Gate Charge Qg [nC]
Drain-Source Voltage V
DS
[V]
Gate-Source Voltage V
GS
[V]