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Электронный компонент: 2SK2799

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SHINDENGEN
2SK2799
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(F10F35VX2)
350V 10A
Case : E-pack
VX-2 Series Power MOSFET
N-Channel Enhancement type
(Unit : mm)
Case : FTO-220
Switching power supply of AC 100V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings
Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
350
V
Gate-Source Voltage
V
GSS
30
Continuous Drain Current
DC
I
D
10
Continuous Drain Current
Peak)
I
DP
30
A
Continuous Source Current
DC
I
S
10
Total Power Dissipation
P
T
50
W
Single Pulse Avalanche Current
I
AS
T
ch
= 25
10
A
Dielectric Strength
dis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque : 0.3Nm
0.5
w
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2799 ( F10F35VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
350
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 350V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 5A, V
DS
= 10V
3.0
7.6
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 5A, V
GS
= 10V
0.3
0.4
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3.0
3.5
V
Source-Drain Diode Forwade Voltage
V
SD
I
S
= 5A, V
GS
= 0V
1.5
Themal Resistance
jc
junction to case
2.5
/
Total Gate Charge
Q
g
V
DD
= 200V, V
GS
= 10V, I
D
= 10A
40
nC
Input Capacitance
C
iss
1130
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
125
pF
Output Capacitance
C
oss
330
Turn-On Time
t
on
I
D
= 5A, R
L
= 30, V
GS
= 10V
70
105
ns
Turn-Off Time
t
off
210
300
0
5
10
15
20
0
5
10
15
20
2SK2799
Transfer Characteristics
V
DS
= 15V
pulse test
TYP
Tc =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
0.01
0.1
1
10
-50
0
50
100
150
2SK2799
V
GS
= 10V
pulse test
TYP
I
D
= 5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
-50
0
50
100
150
2SK2799
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]
Safe Operating Area
0.1
1
10
100
1
10
100
1000
2SK2799
100
s
Tc = 25
C
Single Pulse
200
s
1ms
10ms
DC
Drain-Source Voltage V
DS
[V]
Drain Current I
D
[A]
R
DS(ON)
limit
0.001
0.01
0.1
1
10
2SK2799
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Time t [s]
Transient Thermal Impedance
jc(t) [
C/W]
Capacitance
10
100
1000
10000
0
20
40
60
80
100
2SK2799
0.005
Tc=25
C
TYP
Ciss
Coss
Crss
Drain-Source Voltage V
DS
[V]
Capacitance Ciss Coss Crss [pF]
0
20
40
60
80
100
0
50
100
150
2SK2799
Power Derating
Power Derating [%]
Case Temperature Tc [
C]
0
50
100
150
200
250
0
20
40
60
80
100
2SK2799
0
5
10
15
20
100V
Gate Charge Characteristics
I
D
= 10A
50V
V
DD
= 200V
V
GS
V
DS
Gate Charge Qg [nC]
Drain-Source Voltage V
DS
[V]
Gate-Source Voltage V
GS
[V]